Near-Infrared Phosphor Zn2InGaO5:Cr3+ with a Wide Bandgap Applicable for Light Sources at Low Temperature DOI

Yanguang Guo,

Shuanghong Wei,

Fanghai Liu

et al.

ACS Applied Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 26, 2025

Differing from traditional near-infrared (NIR) light sources that are made thermal radiation of a blackbody or filtered gas discharge, the technique by converting blue emission light-emitting diode (LED) chips into NIR provides solution. For this purpose, phosphor should be developed at first. In work, we report Zn2InGaO5:Cr3+, synthesized 1450 °C for 5 h in air ambient, applicable LED application low temperature no higher than 200 K. The Zn2In0.98Cr0.02GaO5 and Zn2InGaO5 host have direct band gap about 3.00 3.03 eV, respectively, belong to class bandgap semiconductors. Excited 471 nm room temperature, gives ultrabroadband emission, peaked 826 with full width half-maximum (FWHM) 192 nm, region 700–1100 nm. luminescence intensity increases as 10 K, maximizes then decreases further, showing an anomalous temperature-quenching effect. Meanwhile, peak blue-shifts continuously 779 output power pc-LED device packaged using Zn2InGaO5:Cr3+ driven under current 100 mA is 5.14 mW, which photoelectric conversion efficiency 1.9%.

Language: Английский

Near-Infrared Phosphor Zn2InGaO5:Cr3+ with a Wide Bandgap Applicable for Light Sources at Low Temperature DOI

Yanguang Guo,

Shuanghong Wei,

Fanghai Liu

et al.

ACS Applied Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 26, 2025

Differing from traditional near-infrared (NIR) light sources that are made thermal radiation of a blackbody or filtered gas discharge, the technique by converting blue emission light-emitting diode (LED) chips into NIR provides solution. For this purpose, phosphor should be developed at first. In work, we report Zn2InGaO5:Cr3+, synthesized 1450 °C for 5 h in air ambient, applicable LED application low temperature no higher than 200 K. The Zn2In0.98Cr0.02GaO5 and Zn2InGaO5 host have direct band gap about 3.00 3.03 eV, respectively, belong to class bandgap semiconductors. Excited 471 nm room temperature, gives ultrabroadband emission, peaked 826 with full width half-maximum (FWHM) 192 nm, region 700–1100 nm. luminescence intensity increases as 10 K, maximizes then decreases further, showing an anomalous temperature-quenching effect. Meanwhile, peak blue-shifts continuously 779 output power pc-LED device packaged using Zn2InGaO5:Cr3+ driven under current 100 mA is 5.14 mW, which photoelectric conversion efficiency 1.9%.

Language: Английский

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