Effect of 60Co γ‐Ray Irradiation on the Linearity of Conductance Updating of the HfOx:Mg(9%)‐Based Memristive Synapses Studied by Electrochemical Impedance Spectroscopy DOI

H. H. Feng,

Hongjia Song,

Linyan Yao

et al.

physica status solidi (a), Journal Year: 2025, Volume and Issue: unknown

Published: April 9, 2025

Binary metal oxide memristive synapses, with their simple structure, high integration density, low power, and speed, are promising for aerospace computing chips. However, irradiation can degrade performance. This article investigates the effect of 60 Co γ‐ray radiation on synaptic properties HfO x :Mg(9%), a particular focus changes in linearity conductance updating. is achieved by introducing electrochemical impedance spectroscopy (EIS) to analyze variations oxygen‐deficient conductive filaments. Results show that increasing dose (0–1 Mrad(Si)) decreases high‐resistance state current during long‐term depression, reducing linearity. X‐ray photoelectron reveals increased oxygen vacancies postirradiation, while EIS indicates these hinder filament rupture, causing damage. research enhances understanding effects supports development radiation‐resistant synapses.

Language: Английский

Effect of 60Co γ‐Ray Irradiation on the Linearity of Conductance Updating of the HfOx:Mg(9%)‐Based Memristive Synapses Studied by Electrochemical Impedance Spectroscopy DOI

H. H. Feng,

Hongjia Song,

Linyan Yao

et al.

physica status solidi (a), Journal Year: 2025, Volume and Issue: unknown

Published: April 9, 2025

Binary metal oxide memristive synapses, with their simple structure, high integration density, low power, and speed, are promising for aerospace computing chips. However, irradiation can degrade performance. This article investigates the effect of 60 Co γ‐ray radiation on synaptic properties HfO x :Mg(9%), a particular focus changes in linearity conductance updating. is achieved by introducing electrochemical impedance spectroscopy (EIS) to analyze variations oxygen‐deficient conductive filaments. Results show that increasing dose (0–1 Mrad(Si)) decreases high‐resistance state current during long‐term depression, reducing linearity. X‐ray photoelectron reveals increased oxygen vacancies postirradiation, while EIS indicates these hinder filament rupture, causing damage. research enhances understanding effects supports development radiation‐resistant synapses.

Language: Английский

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