Optical observation of single spins in silicon

Nature, Journal Year: 2022, Volume and Issue: 607(7918), P. 266 - 270

Published: July 13, 2022

Language: Английский

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Silicon Carbide Photonics Bridging Quantum Technology

ACS Photonics, Journal Year: 2022, Volume and Issue: 9(5), P. 1434 - 1457

Published: April 18, 2022

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in high-power high-frequency applications. Recent research revealed that SiC also exhibits unique optical properties can be utilized for novel photonic devices. is a transparent material from UV infrared, possess nonlinear visible mid-infrared it meta-material range. fluorescence due color centers associated with single photon emitters as spin qubits quantum computation communication networks sensing. This combination excellent electronic, spintronic prompted develop sensors technology domain. this perspective, we highlight progress, current trends prospects science underpinning development classical Specifically, lay out main steps recently undertaken achieve high quality components, outline some challenges faces establish its relevance viable technology. We will focus on potential bridge gap between photonics, technologically advance sensing finally provide an outlook possible alternative applications where electronics, spintronics could merge.

Language: Английский

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Quantum sensing and imaging with spin defects in hexagonal boron nitride

Advances in Physics X, Journal Year: 2023, Volume and Issue: 8(1)

Published: April 29, 2023

Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and two-dimensional (2D) layered structure, color hBN can be readily integrated into nanophotonic plasmonic structures on chip. More importantly, the discovered optically addressable spin defects provide interface between photons electron spins sensing The most well-studied defects, negatively charged vacancy (VB−) been used static magnetic fields, noise, temperature, strain, nuclear spins, paramagnetic liquids, RF signals, beyond. In particular, nanosheets with form van der Waals (vdW) heterostructures other 2D materials situ imaging. This review summarizes rapidly evolving field hBN. We introduce basic properties protocols, recent experimental demonstrations imaging defects. also discuss methods enhance their sensitivity. Finally, we envision some potential developments applications

Language: Английский

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Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

Physical Review Letters, Journal Year: 2021, Volume and Issue: 126(8)

Published: Feb. 22, 2021

We report the detection of individual emitters in silicon belonging to seven different families optically-active point defects. These fluorescent centers are created by carbon implantation a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over [1.1,1.55]-$\mu$m range, spanning O- and C-telecom bands. analyse their photoluminescence spectrum, dipolar optical relaxation dynamics at 10K. For specific family, we show constant intensity saturation from 10K temperatures well above 77K-liquid nitrogen temperature. Given advanced control nanofabrication integration silicon, these novel artificial atoms promising candidates Si-based quantum technologies.

Language: Английский

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Nanomaterials for Quantum Information Science and Engineering

Advanced Materials, Journal Year: 2022, Volume and Issue: 35(27)

Published: Feb. 9, 2022

Quantum information science and engineering (QISE) which entails use of quantum mechanical states for processing, communications, sensing the area nanoscience nanotechnology have dominated condensed matter physics materials research in 21st century. Solid state devices QISE have, to this point, predominantly been designed with bulk as their constituents. In review, we consider how nanomaterials (i.e. intrinsic confinement) may offer inherent advantages over conventional QISE. We identify challenges specific types qubits, emerging overcome these challenges. Challenges progress towards based are identified. aim help close gap between communities inspire that will lead next generation scalable practical applications.

Language: Английский

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Detection of Single W-Centers in Silicon

ACS Photonics, Journal Year: 2022, Volume and Issue: 9(7), P. 2337 - 2345

Published: July 5, 2022

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced photonic devices prone to scalability. Research efforts have so far focused on extrinsic based impurities incorporated inside lattice. Here we demonstrate detection single intrinsic silicon, which are linked tri-interstitial complex called W-center, with zero-phonon line at 1.218${\mu}$m. Investigating their single-photon emission reveals new information about this common radiation damage center, such as its dipolar orientation and photophysics. We also identify microscopic structure show that although defect does not feature electronic states bandgap, Coulomb interactions lead excitonic radiative recombination below bandgap. These results could set stage for numerous perspectives luminescent integrated photonics, communications sensing.

Language: Английский

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Decoherence of V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ spin defects in monoisotopic hexagonal boron nitride

Nature Communications, Journal Year: 2022, Volume and Issue: 13(1)

Published: July 27, 2022

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional sensing platforms. Here we rely on hBN crystals isotopically enriched with either

Language: Английский

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Spin-active defects in hexagonal boron nitride

Materials for Quantum Technology, Journal Year: 2022, Volume and Issue: 2(3), P. 032002 - 032002

Published: July 5, 2022

Abstract Quantum technology grown out of quantum information theory, including communication, computation and sensing, not only provides powerful research tools for numerous fields, but also is expected to go civilian use in the future. Solid-state spin-active defects are one promising platforms technology, host materials include three-dimensional diamond silicon carbide, emerging two-dimensional hexagonal boron nitride (hBN) transition-metal dichalcogenides. In this review, we will focus on spin hBN, summarize theoretical experimental progresses made understanding properties these defects. particular, combination prediction verification highlighted. We discuss future advantages challenges solid-state spins hBN path towards applications.

Language: Английский

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Fast Wide‐Field Quantum Sensor Based on Solid‐State Spins Integrated with a SPAD Array

Advanced Quantum Technologies, Journal Year: 2023, Volume and Issue: 6(9)

Published: July 3, 2023

Abstract Achieving fast, sensitive, and parallel measurement of a large number quantum particles is an essential task in building large‐scale platforms for different information processing applications such as sensing, computation, simulation, communication. Current experimental atomic optical physics based on CMOS sensors charged coupled device cameras are limited by either low sensitivity or slow operational speed. Here array single‐photon avalanche diodes integrated with solid‐state spin defects diamond to build fast wide‐field sensor, achieving frame rate up 100 kHz. The design the setup perform spatially resolved imaging systems presented. A few exemplary applications, including sensing DC AC magnetic fields, temperature, strain, local density, charge dynamics, experimentally demonstrated using nitrogen‐vacancy ensemble sample. developed photon detection broadly applicable other atom arrays trapped tweezers, lattices, donors silicon, rare earth ions solids.

Language: Английский

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Recent advances in theab initiotheory of solid-state defect qubits

Nanophotonics, Journal Year: 2023, Volume and Issue: 12(3), P. 359 - 397

Published: Jan. 31, 2023

Solid-state defects acting as single photon sources and quantum bits are leading contenders in technologies. Despite great efforts, not all the properties behaviours of presently known solid-state defect understood. Furthermore, various technologies require novel solutions, thus new should be explored to this end. These issues call develop

Language: Английский

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