Vertically Stacked Broadband GNIF‐MoS₂/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 17, 2024

Abstract The proposed model structure, featuring a gold (Au) nano‐island film (GNIF) integrated with vertically stacked van der Waals heterojunction and offering an elegant platform for high‐performance, efficient, sensitive photodetection across broad spectral range, is designated as GNIF‐MoS₂/p‐Ge(MoS 2 = Molybdenum disulfide, p‐Ge p type germanium). GNIF fabricated via ultrathin deposition, based on the surface dewetting properties of MoS . as‐fabricated photodetector (PD), ≈20 times reduction in dark current characterized by wavelength‐dependent high responsivity (R(λ)), photoconductive gain (G(λ)), detectivity (D(λ)), respond to range from visible light (400 nm) short wave infrared (SWIR) (1600 nm). ultrahigh transient response (τ r ) found be ≈2.5 16 µs 470 (visible light) 1550 nm wavelengths, respectively, resulting 3‐dB bandwidths up ≈48 kHz, which considered such devices. To understand inherent mechanisms broadband detection photoresponse ultrafast PDs, meticulous investigation conducted behaviors, depletion width changes, material properties. results provide valuable insights basis construction suitable PDs nanometer‐thin metal films, 2D semiconductors, 3D hybrid structure.

Language: Английский

Influence of Ionic Liquids on the Functionality of Optoelectronic Devices Employing CsPbBr3 Single Crystals

Crystals, Journal Year: 2024, Volume and Issue: 14(11), P. 956 - 956

Published: Oct. 31, 2024

Regulating the nucleation temperature and growth rates during inverse crystallization (ITC) is vital for obtaining high-quality perovskite single crystals via this technique. Precise control over these parameters enables growing optimized various optoelectronic devices. In study, it demonstrated that incorporating a 1-butyl-3-methylimidazolium bromide (BMIB) ionic liquid into precursor solution of cesium lead (CsPbBr3) brings about dual enhancement effect. This includes reduction in from 85 °C to 65 significant improvement both characteristics crystal properties. The CsPbBr3 grown using ITC with BMIB added (method (2)) demonstrate improved chemical physical properties (crystallinity, lattice strain, nonradioactive recombination, trap density) compared produced through conventional alone (1)). exceptional quality inclusion allowed development highly responsive device, demonstrating heightened sensitivity green light. findings investigation reveal assisted by exerts substantial impact on crystals. influence proves advantageous devices based

Language: Английский

Theoretical Investigations of Structural, Mechanical, Photoelectric and Photocatalytic Properties of Rb2agbix6 (X = Cl, Br, I) Double Perovskite for Multiple Applications

Published: Jan. 1, 2023

Double perovskite has been widely used in the field of optoelectronic devices due to its stable structure and high energy conversion efficiency. In our work, density functional theory was utilized comprehensively explore structural, mechanical, photoelectric photocatalytic performance Rb2AgBiX6 (X=Cl, Br, I) double perovskite, evaluated applicability photovoltaic photocatalysis. Firstly, studied materials exhibit excellent structural stability formability through analysis factors, formation mechanical properties. addition, based on HSE06 functional, calculated bandgap values are 2.86, 2.17 1.49 eV, respectively, belong indirect semiconductors. Meanwhile, optical parameters show that exhibits significant light absorption coefficient(~105/cm) visible ultraviolet ranges. Moreover, effective mass photo generated carriers is relatively small, which favorable for carrier transport. Due suitable bandgap, higher coefficient smaller carriers, Rb2AgBiI6 greater potential as a photosensitive material solar cells. Finally, properties mainly confirmed by redox recombination rate materials. Notably, Rb2AgBiCl6 Rb2AgBiBr6 have edge band potentials lower electron-hole rate, means these two better activity. Therefore, outstanding properties, great application fields photovoltaics

Language: Английский