MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation DOI

Quanhong Chang,

W. M. Chen,

Fangzhou Xing

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(4)

Published: Nov. 19, 2024

The development of neuromorphic systems necessitates the use memcapacitors that can adapt to optoelectronic modulation. Two-dimensional (2D) materials with atomically thin features and their derived heterostructures are able allow for controlling local transfer charge carrier but reports on 2D materials-enabled capacitive-type photoelectric synapses have not been experimentally exploited yet. Herein, MXene-TiO2 heterostructured iontronic neural devices based ion-dynamic capacitance enabling modulation designed. According electrochemical insight, under UV light illustration, photoexcited electrons in TiO2 flow MXene, leading localized accumulation as trapping center thus inducing embedding H+ participating pseudo-intercalation. On removing light, a part trapped instantly returned initial state. As result, this memcapacitor hysteresis Through assessing its applicability computing, achieves high recognition accuracy (93.5%) handwritten digits by recognizing sharpening input signal trajectory.

Language: Английский

Flexible Optoelectronic Synapses Based on Conjugated Polymer Blends for Ultra Broadband Spectrum Light Perception DOI

Longlong Jiang,

Lu Yang,

Yiming Yuan

et al.

ACS Materials Letters, Journal Year: 2024, Volume and Issue: 6(5), P. 1606 - 1615

Published: March 22, 2024

We demonstrate a flexible optoelectronic synaptic device that uses donor–acceptor conjugated polymer with excellent electrical properties and highly optically active block copolymer to form heterojunction as the layer, enabling ultrabroad-spectrum perception from deep ultraviolet (DUV), visible (vis), near-infrared (NIR) for first time. Essential behaviors have been successfully simulated, such learning experience behavior simulation, international Morse code communication, high-pass filtering. The shows stable when bent at different radii of curvature numbers bending cycles. When is extremely deformed under radius 4 mm, postsynaptic current still maintained above 84%. Moreover, an artificial reflex arc was constructed using synapse key information processing unit. Recognition digits achieved by constructing neural network DUV light stimulation, achieving highest recognition rate so far, up 94%. This work demonstrates methodology prepare devices tunable plasticity broad-spectrum potentially applicable building neuromorphic electronics.

Language: Английский

Citations

10
Recent trends in neuromorphic systems for non-von Neumann in materia computing and cognitive functionalities DOI
Indrajit Mondal, Rohit Attri, Tejaswini S. Rao

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(4)

Published: Oct. 1, 2024

In the era of artificial intelligence and smart automated systems, quest for efficient data processing has driven exploration into neuromorphic aiming to replicate brain functionality complex cognitive actions. This review assesses, based on recent literature, challenges progress in developing basic focusing “material-neuron” concepts, that integrate structural similarities, analog memory, retention, Hebbian learning brain, contrasting with conventional von Neumann architecture spiking circuits. We categorize these devices filamentary non-filamentary types, highlighting their ability mimic synaptic plasticity through external stimuli manipulation. Additionally, we emphasize importance heterogeneous neural content support conductance linearity, plasticity, volatility, enabling effective storage various types information. Our comprehensive approach categorizes fundamentally different under a generalized pattern dictated by driving parameters, namely, pulse number, amplitude, duration, interval, as well current compliance employed contain conducting pathways. also discuss hybridization protocols fabricating systems making use existing complementary metal oxide semiconductor technologies being practiced silicon foundries, which perhaps ensures smooth translation user interfacing new generation devices. The concludes outlining insights challenges, future directions realizing deployable field intelligence.

Language: Английский

Citations

5
One Transistor−One Memristor Integrated Device Based on the Dual Conductive Filament Mechanism DOI
Liang Zhao, Zhidong Pan, Ruhong Zhou

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 24, 2025

Language: Английский

Citations

0
Two-dimensional materials for artificial sensory devices: advancing neuromorphic sensing technology DOI Creative Commons

Jae-Kwon Ko,

Chanmee Ock,

Hyeongyu Gim

et al.

npj 2D Materials and Applications, Journal Year: 2025, Volume and Issue: 9(1)

Published: May 2, 2025

Language: Английский

Citations

0
Emerging Artificial Synaptic Devices Based on Organic Semiconductors: Molecular Design, Structure and Applications DOI
Yunchao Xu, Yuan He, Dongyong Shan

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

In modern computing, the Von Neumann architecture faces challenges such as memory bottleneck, hindering efficient processing of large datasets and concurrent programs. Neuromorphic inspired by brain's architecture, emerges a promising alternative, offering unparalleled computational power while consuming less energy. Artificial synaptic devices play crucial role in this paradigm shift. Various material systems, from organic to inorganic, have been explored for neuromorphic devices, with materials attracting attention their excellent photoelectric properties, diverse choices, versatile preparation methods. Organic semiconductors, particular, offer advantages over transition-metal dichalcogenides, including ease flexibility, making them suitable large-area films. This review focuses on emerging artificial based discussing different branches within semiconductor system, various fabrication methods, device structure designs, applications synapse. Critical considerations achieving truly human-like dynamic perception systems semiconductors are also outlined, reflecting ongoing evolution computing.

Language: Английский

Citations

0
Efficient Carbon‐Based Optoelectronic Synapses for Dynamic Visual Recognition DOI Creative Commons

Wenhao Liu,

Jihong Wang, Jiahao Guo

et al.

Advanced Science, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 22, 2025

Abstract The human visual nervous system excels at recognizing and processing external stimuli, essential for various physiological functions. Biomimetic systems leverage biological synapse properties to improve memory encoding perception. Optoelectronic devices mimicking these synapses can enhance wearable electronics, with layered heterojunction materials being ideal optoelectronic due their tunable biocompatibility. However, conventional synthesis methods are complex environmentally harmful, leading issues such as poor stability low charge transfer efficiency. Therefore, it is imperative develop a more efficient, convenient, eco‐friendly method preparing materials. Here, one‐step ultrasonic employed mix fullerene (C60) graphene oxide (GO), yielding homogeneous composite film via self‐assembly. biomimetic based on this achieves 97.3% accuracy in dynamic recognition tasks exhibits capabilities synaptic plasticity. Experiments utilizing X‐ray photoelectron spectroscopy (XPS), diffraction (XRD), Fourier–transform infrared (FTIR), ultraviolet‐visible (UV‐vis), scanning electron microscopy (SEM), transmission (TEM) confirms stable π‐π interactions between GO C60, facilitating prolonging carrier recombination times. novel approach leveraging high‐density π advances artificial intelligence neuromorphic systems.

Language: Английский

Citations

0
Optical Synaptic Devices with Multiple Encryption Features Based on SERS‐Revealed Charge‐Transfer Mechanism DOI
Shaoguang Zhao, Xiangyu Hou,

Yue Cheng

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 8, 2025

Abstract 2D optical synaptic devices with atomic‐scale thickness show potential for building highly integrated tunable artificial visual neural networks. However, their also leads to weak light absorption, limiting device photoresponse. Here, a high‐performance based on Rhodamine 6G (R6G)/InSe hybrid structure is proposed, achieving remarkable 328.9% enhancement in photoresponse compared InSe devices. Using surface‐enhanced Raman spectroscopy (SERS) as nondestructive probing technique, it demonstrated that light‐induced charge transfer between R6G and the key mechanism enabling device's high performance. Furthermore, introducing self‐limited oxide layer surface provides additional evidence process. This charge‐transfer‐based effectively mimics neurotransmitter transmission process biological synapses, showing unique applications such image preprocessing decoding within In addition, through treatment techniques, precise control over achieved, design of multiple encryption‐based anti‐counterfeiting array highlighting value on‐chip anti‐counterfeiting. By employing spectrally noninvasive method probe transfer, this study elucidates critical role opens novel application pathways.

Language: Английский

Citations

0
MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation DOI

Quanhong Chang,

W. M. Chen,

Fangzhou Xing

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(4)

Published: Nov. 19, 2024

The development of neuromorphic systems necessitates the use memcapacitors that can adapt to optoelectronic modulation. Two-dimensional (2D) materials with atomically thin features and their derived heterostructures are able allow for controlling local transfer charge carrier but reports on 2D materials-enabled capacitive-type photoelectric synapses have not been experimentally exploited yet. Herein, MXene-TiO2 heterostructured iontronic neural devices based ion-dynamic capacitance enabling modulation designed. According electrochemical insight, under UV light illustration, photoexcited electrons in TiO2 flow MXene, leading localized accumulation as trapping center thus inducing embedding H+ participating pseudo-intercalation. On removing light, a part trapped instantly returned initial state. As result, this memcapacitor hysteresis Through assessing its applicability computing, achieves high recognition accuracy (93.5%) handwritten digits by recognizing sharpening input signal trajectory.

Language: Английский

Citations

1