AIP Advances,
Journal Year:
2024,
Volume and Issue:
14(9)
Published: Sept. 1, 2024
In
this
study,
we
conducted
an
experiment
in
which
a
source
material
was
sprayed
onto
substrate
with
simultaneous
N+
ion
beam
injections.
Hexamethyldisiloxane
(HMDSO)
or
tetraethyl
orthosilicate
(TEOS)
used
as
material.
The
energy
of
ions
set
at
100
eV.
temperature
room
temperature.
As
result
each
trial,
film
deposited
on
the
both
HMDSO
and
TEOS
cases.
analyzed
by
x-ray
photoelectron
spectroscopy
(XPS)
Fourier
transform
infrared
(FTIR)
spectroscopy.
We
found
that
silicon
dioxide
nitrogen
atoms
(2–4
at.
%)
were
included
film.
For
comparison,
trial
also
hexamethyldigermane
(HMDG)
30
eV
Although
HMDG
had
no
oxygen
its
molecule,
XPS
FTIR
results
showed
germanium
oxide
containing
(2
%).
Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
12(34)
Published: Aug. 26, 2024
Abstract
Reducing
power
consumption
has
always
been
a
pressing
issue
for
integrated
circuits.
Currently,
there
is
strong
interest
in
the
development
of
self‐powered
photodetectors
with
low
consumption,
high
quantum
efficiency,
and
integration.
In
this
work,
novel
GaInP/AlGaAs
photodetector
developed,
where
photovoltaic
effect
Schottky
junction
enhanced
by
assistance
underneath
heterojunction,
achieving
near
unity
integration,
ultrafast
response
speed.
A
single
device
exhibits
responsivity
(R)
467
mA
W
−1
mode,
specific
detectivity
(D
*
)
1.43
×
10
11
Jones,
conversion
efficiency
(PCE)
14.5%,
an
external
(EQE)
96.56%.
Further,
interconnect
integration
technique
used
to
integrate
81
individual
detector
units
onto
5
mm
2
chip,
resulting
array
that
significantly
improves
optical
response.
The
frequency
feature
fast
19
µs
−3
dB
bandwidth
21.34
kHz.
chip
further
STM32
realize
automotive
speed
measurement
system.
This
work
provides
technological
solution
high‐frequency,
highly
using
heterojunction‐assisted
GaInP
junctions.
AIP Advances,
Journal Year:
2024,
Volume and Issue:
14(9)
Published: Sept. 1, 2024
In
this
study,
we
conducted
an
experiment
in
which
a
source
material
was
sprayed
onto
substrate
with
simultaneous
N+
ion
beam
injections.
Hexamethyldisiloxane
(HMDSO)
or
tetraethyl
orthosilicate
(TEOS)
used
as
material.
The
energy
of
ions
set
at
100
eV.
temperature
room
temperature.
As
result
each
trial,
film
deposited
on
the
both
HMDSO
and
TEOS
cases.
analyzed
by
x-ray
photoelectron
spectroscopy
(XPS)
Fourier
transform
infrared
(FTIR)
spectroscopy.
We
found
that
silicon
dioxide
nitrogen
atoms
(2–4
at.
%)
were
included
film.
For
comparison,
trial
also
hexamethyldigermane
(HMDG)
30
eV
Although
HMDG
had
no
oxygen
its
molecule,
XPS
FTIR
results
showed
germanium
oxide
containing
(2
%).
