Crater-shaped enrichment of VSi color centers in 4H-SiC using single-pulse near-infrared femtosecond laser processing DOI
Mengzhi Yan, J. Zhao, Ying Song

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(24)

Published: Dec. 9, 2024

Currently, silicon vacancy (VSi) color centers in SiC are of significant interest due to their potential applications quantum sensing and communication. Meanwhile, femtosecond lasers, as a non-thermal processing technique, offer considerable advantages machining hard brittle materials, such SiC. Femtosecond laser effectively increases the yield VSi bulk materials forms crater-shaped enriched regions on surface. However, notable gap exists simulation methods explain mechanisms behind laser-assisted center generation. In this work, we develop three-dimensional molecular dynamics (3D-MD) model using an integral hemi-ellipsoidal shell mathematical framework simulate interaction Gaussian beams with materials. Additionally, calculate transmittance, absorption coefficient, refractive index, reflectivity 4H-SiC. Subsequently, ratio 1030 nm 350 μm thick 4H-SiC material is determined energy loss during actual processing. Finally, study analyzes movement trajectories elucidates source This analysis explains enrichment formed after deposition. Our work presents effective 3D-MD modeling approach semiconductor offering insights into efficient creation processes.

Language: Английский

Crater-shaped enrichment of VSi color centers in 4H-SiC using single-pulse near-infrared femtosecond laser processing DOI
Mengzhi Yan, J. Zhao, Ying Song

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(24)

Published: Dec. 9, 2024

Currently, silicon vacancy (VSi) color centers in SiC are of significant interest due to their potential applications quantum sensing and communication. Meanwhile, femtosecond lasers, as a non-thermal processing technique, offer considerable advantages machining hard brittle materials, such SiC. Femtosecond laser effectively increases the yield VSi bulk materials forms crater-shaped enriched regions on surface. However, notable gap exists simulation methods explain mechanisms behind laser-assisted center generation. In this work, we develop three-dimensional molecular dynamics (3D-MD) model using an integral hemi-ellipsoidal shell mathematical framework simulate interaction Gaussian beams with materials. Additionally, calculate transmittance, absorption coefficient, refractive index, reflectivity 4H-SiC. Subsequently, ratio 1030 nm 350 μm thick 4H-SiC material is determined energy loss during actual processing. Finally, study analyzes movement trajectories elucidates source This analysis explains enrichment formed after deposition. Our work presents effective 3D-MD modeling approach semiconductor offering insights into efficient creation processes.

Language: Английский

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