Journal of the Mechanics and Physics of Solids, Journal Year: 2024, Volume and Issue: unknown, P. 105949 - 105949
Published: Nov. 1, 2024
Language: Английский
Journal of the Mechanics and Physics of Solids, Journal Year: 2024, Volume and Issue: unknown, P. 105949 - 105949
Published: Nov. 1, 2024
Language: Английский
2022 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), Journal Year: 2024, Volume and Issue: unknown, P. 1 - 6
Published: May 20, 2024
Language: Английский
Citations
0Vacuum, Journal Year: 2024, Volume and Issue: 230, P. 113617 - 113617
Published: Sept. 7, 2024
Language: Английский
Citations
0Journal of the Mechanics and Physics of Solids, Journal Year: 2024, Volume and Issue: 194, P. 105935 - 105935
Published: Nov. 9, 2024
Language: Английский
Citations
0Published: Jan. 1, 2023
We propose a bilayer MoS2-based metal-semiconductor field-effect transistor (MESFET) with the characteristic of mechanical modulation its performance through flexoelectricity. The MESFET sample is fabricated MoS2 and Si/SiO2 substrate as well gate electrode Pt source/drain Ag/Au. current-voltage relationships under action different voltages tip forces their combinations are measured AFM. force produces strain gradient induced flexoelectric polarization field thus changes barrier height Schottky contact. As result, it can serve like an equivalent voltage, playing significant tuning role in such transconductance carrier mobility proposed MESFET. Within drain-source voltage (VDS) range 0 to 2 V, maximum combined traditional (VGS) reach 470 cm-2/(V∙s) significantly higher than that VGS alone. study provides valuable insights for application flexoelectricity devices based on two-dimensional materials.
Language: Английский
Citations
1Journal of the Mechanics and Physics of Solids, Journal Year: 2024, Volume and Issue: unknown, P. 105949 - 105949
Published: Nov. 1, 2024
Language: Английский
Citations
0