Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors DOI Creative Commons
Nahid Sultan Al-Mamun, Md Abu Jafar Rasel, Zahabul Islam

et al.

Journal of Physics D Applied Physics, Journal Year: 2024, Volume and Issue: 58(4), P. 045105 - 045105

Published: Oct. 25, 2024

Abstract Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect eliminate because of their highly localized nature. We propose high-stored internal energy makes potential sites for defect nucleation under radiation, particularly if locations coincide with the electrically sensitive regions a transistor. In this study, we validate hypothesis molecular dynamic simulation experiments exposing both pristine annealed HEMTS 2.8 MeV Au +3 irradiation. Our unique annealing process uses momentum electrons, also known wind force (EWF) mitigate stress at room temperature. High-resolution transmission microscopy cathodoluminescence spectra reveal reduction point defects dislocations near two-dimensional gas region EWF-treated devices compared devices. The HEMTs showed relatively higher resilience approximately 10% less degradation drain saturation current ON-resistance 5% peak transconductance. Both carrier concentration were impacted results suggest lower density nanoscale localization contributed improved radiation tolerance Intriguingly, EWF is found modulate distribution by moving form dislocation networks, act sinks induced assisted faster annealing.

Language: Английский

Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing DOI Creative Commons
Nahid Sultan Al-Mamun,

Yuxin Du,

Jianan Song

et al.

Micromachines, Journal Year: 2025, Volume and Issue: 16(3), P. 242 - 242

Published: Feb. 20, 2025

The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barrier diodes (SBDs) simultaneous heating and electrical biasing. We observed degradation situ inside a transmission electron microscope (TEM) using custom-fabricated chip thermal control. pristine device exhibited density extended defects, primarily due to lattice mismatch expansion differences between GaN sapphire. TEM STEM imaging, coupled with energy-dispersive X-ray spectroscopy (EDS), revealed progressive diode increasing bias temperature. At higher levels (4–5 V) elevated (300–455 °C), interdiffusion alloying Au/Pd metal stack GaN, along defect generation near interface, resulted contact failure catastrophic degradation. A geometric phase analysis further identified strain localization distortions induced by stresses, which facilitated diffusion pathways rapid atom migration. These findings highlight that defect-mediated electrothermal interfacial chemical reactions are critical elements physics diodes.

Language: Английский

Citations

0
Thermal conductivity of suspended GaN thin film measured by Raman spectroscopy DOI
Sopheap Sam,

Yutao Fang,

Ziling Cai

et al.

International Journal of Heat and Mass Transfer, Journal Year: 2025, Volume and Issue: 244, P. 126946 - 126946

Published: March 14, 2025

Language: Английский

Citations

0
Micro-Raman and SEM analyses of failed GaN HEMT multilayer architecture DOI Creative Commons
Enza Fazio, Cettina Bottari,

Santi Alessandrino

et al.

Microelectronics Reliability, Journal Year: 2025, Volume and Issue: 169, P. 115754 - 115754

Published: April 23, 2025

Language: Английский

Citations

0
Application and prospect of in situ TEM in wide bandgap semiconductor materials and devices DOI
Chao Chen, Tao Zhang, Yimin Lei

et al.

Applied Physics Reviews, Journal Year: 2025, Volume and Issue: 12(1)

Published: March 1, 2025

Wide bandgap semiconductor (WBS) materials have a wide range of applications in radio frequency and power electronics due to their many advantages such as high saturation drift velocity, breakdown voltage, excellent thermal/chemical stability. Diamond, Ga2O3, GaN, SiC are typical WBS materials. Reliability studies for these four devices crucial applications. Traditional means reliability include, but not limited to, x-ray diffraction, atomic force microscopy, Raman spectroscopy, electron microscopy et al. However, most methods ex situ after material or device failure thus some limitations. In transmission microscope (TEM) is favorable technology observe the degradation process real time, which may provide effective guidance growth, structure design, optimization, improvement. recent years, TEM has been gradually used by researchers study devices. this review, we present comprehensive systematic review works on diamond, devices, with particular focus progress While summarizing investigation also looks forward future promoting

Language: Английский

Citations

0
Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride DOI Creative Commons
В.М. Миннебаев

Russian Technological Journal, Journal Year: 2025, Volume and Issue: 13(2), P. 57 - 73

Published: Feb. 11, 2025

Objectives . Gallium nitride heterostructural field-effect transistors (GaN HFET) are among the most promising semiconductor devices for power and microwave electronics. Over past 10–15 years, GaN HFETs have firmly established their position in radio-electronic equipment transmitting, receiving, processing information, as well electronics products, due to significant advantages terms of energy thermal parameters. At same time, issues associated with ensuring reliability no less acute than based on other materials. The aim study is review mechanical mechanisms degradation physicochemical characteristics materials used, corresponding growth post-growth processes. Methods preventing or reducing these during development, production, operation evaluated. main research method consists an analytical results publications by a wide range specialists field physics, production technology heteroepitaxial structures active them, modeling design modules reliable operation. Results As describing problems HFET quality caused overheating, degradation, hot electrons phonons gallium nitride, article provides overview into phenomena methods impact transistor technical parameters indicators. Conclusions. show that strong electric fields high specific loading highpower can cause physical, polarization, piezoelectric lead redistribution stresses region, electrical characteristics, decrease ofthe whole. Itis shown presence field-plate passivating SiN layer leads values stress gate area 1.3–1.5 times. effects class AB amplifiers more pronounced E amplifiers; moreover, mean time failure sharply decreases at zone temperatures over 320–350°C.

Language: Английский

Citations

0
Preparation of Multi-Layer Graphene Using Nitrogen-Doped Ultrananocrystalline Diamond as a Solid-State Carbon Source DOI

Ashutosh Shirsat,

Frazna Parastuti,

Nafila Amalia Syahida

et al.

Journal of Electronic Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 13, 2024

Language: Английский

Citations

0
Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors DOI Creative Commons
Nahid Sultan Al-Mamun, Md Abu Jafar Rasel, Zahabul Islam

et al.

Journal of Physics D Applied Physics, Journal Year: 2024, Volume and Issue: 58(4), P. 045105 - 045105

Published: Oct. 25, 2024

Abstract Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect eliminate because of their highly localized nature. We propose high-stored internal energy makes potential sites for defect nucleation under radiation, particularly if locations coincide with the electrically sensitive regions a transistor. In this study, we validate hypothesis molecular dynamic simulation experiments exposing both pristine annealed HEMTS 2.8 MeV Au +3 irradiation. Our unique annealing process uses momentum electrons, also known wind force (EWF) mitigate stress at room temperature. High-resolution transmission microscopy cathodoluminescence spectra reveal reduction point defects dislocations near two-dimensional gas region EWF-treated devices compared devices. The HEMTs showed relatively higher resilience approximately 10% less degradation drain saturation current ON-resistance 5% peak transconductance. Both carrier concentration were impacted results suggest lower density nanoscale localization contributed improved radiation tolerance Intriguingly, EWF is found modulate distribution by moving form dislocation networks, act sinks induced assisted faster annealing.

Language: Английский

Citations

0