IEEE photonics journal,
Journal Year:
2024,
Volume and Issue:
16(2), P. 1 - 7
Published: Jan. 11, 2024
A
lithium
niobate
thin-film(LNTF)
electro-optic
modulator(EOM)
with
segmented
electrode
structure
is
investigated,
and
the
influence
of
modulator's
structural
configuration
on
its
performance
achieved.
In
contrast
to
conventional
couplers,
design
incorporates
a
2x2
S-shaped
directional
coupler.
Our
modulator
achieves
bandwidth
nearly
110
GHz
half-wave
voltage
1.45
Vcm.
comparative
analysis
between
two
configurations:
one
SiO
2
cladding
covering
entire
surface
other
coverage
limited
gaps,
which
reveals
latter
potential
for
enhancing
device
performance.
The
accuracy
simulation
results
substantiated
through
both
software
theoretical
calculations.
provide
valuable
insights
LNTF
EOM,
highlighting
efficacy
proposed
structure.
Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
12(20)
Published: June 4, 2024
Abstract
Intrinsic
silicon
(Si)
is
forbidden
for
infrared
(IR)
sensing
at
the
communication
wavelength
like
1.31
or
1.55
µm
due
to
well‐known
bandgap
limitation.
In
this
work,
an
unexpected
physical
picture
of
using
argon
(Ar)
identified,
which
usually
inert
surrounding
chemical
environment
and
used
as
a
protective
agent
in
semiconductor
processing,
overcome
IR‐sensing‐forbidden
problem
Si.
Here,
it
shown
by
analysis
dynamic
secondary
ion
mass
spectrometer
that
such
Si,
when
exposed
laser
pulse
Ar
gas,
can
contain
very
high
dose
up
10
20
cm
−3
even
after
1300
days.
First‐principles
calculations,
molecular
dynamics,
Hall
effect
measurements
reveal
that,
both
steric
repulsions
orbitals
Si
dangling
bonds,
Ar‐filled‐vacancy
produces
much
wider
defect
band
inside
gap,
not
only
responsible
strong
absorption,
but
also
causes
significant
increase
n‐type
conductivity,
line
with
experiments.
The
study
proves
originally
elements
fact
act
active
impurities
semiconductors
advanced
applications,
updates
current
knowledge
physics.
APL Photonics,
Journal Year:
2024,
Volume and Issue:
9(9)
Published: Sept. 1, 2024
We
review
the
integration
techniques
for
incorporating
various
materials
into
silicon-based
devices.
discuss
on-chip
light
sources
with
gain
materials,
linear
electro-optic
modulators
using
low-power
piezoelectric
tuning
devices
highly
absorbing
photodetectors,
and
ultra-low-loss
optical
waveguides.
Methodologies
integrating
these
silicon
are
reviewed,
alongside
technical
challenges
evolving
trends
in
hybrid
heterogeneously
integrated
In
addition,
potential
research
directions
proposed.
With
advancement
of
processes
thin-film
significant
breakthroughs
anticipated,
leading
to
realization
optoelectronic
monolithic
featuring
lasers.
Abstract
High‐speed
electro‐optic
modulators
are
key
components
in
modern
communication
networks
and
various
applications
that
require
chip‐scale
modulation
with
large
bandwidth,
high
efficiency,
compact
footprint.
However,
fundamental
trade‐offs
make
it
challenging
to
achieve
these
metrics
simultaneously,
thus
new
methodologies
must
be
explored.
To
this
end,
a
Mach–Zehnder
modulator
harnessing
slow‐light
waveguides
capacitively
loaded
slow‐wave
electrodes
presented
on
silicon‐nitride‐loaded
lithium
niobate
an
insulator
platform.
The
increased
group
index
reduced
microwave
loss
significantly
improve
the
efficiency.
With
1‐mm‐length
section,
low
half‐wave
voltage
length
product
V
π
·L
of
0.21
cm
is
obtained,
which
one
order
magnitude
smaller
than
conventional
thin
film
modulators,
bandwidth
surpassing
110
GHz
achieved.
digital
signal
processor‐free
non‐return‐to‐zero
eight‐level
pulse
amplitude
up
180
300
Gbps,
respectively,
generated
by
modulator,
provides
ultra‐large
ultra‐high
solution
for
next‐generation
systems.
Abstract
Electro‐optic
modulators
(EOMs),
serving
as
indispensable
components
within
photonic
integrated
circuits,
are
essential
for
enabling
energy‐efficient,
high‐speed,
and
high‐capacity
optical
communication
systems.
This
review
illustrates
the
principal
physical
phenomenon
exploited
in
EOMs
provides
a
comprehensive
analysis
of
cutting‐edge
featuring
interference
structures
(Mach–Zehnder
Michelson‐interferometer
modulators)
resonance
(microring
modulators,
racetrack
crystal
modulators).
The
comparative
performance
merits
limitations
is
presented,
highlighting
combination
diverse
electro‐optic
material
compositions
with
different
structures,
which
reveals
promising
integration
strategic
so
to
pursue
trade‐off
modulation
performance.
It
contributed
ongoing
discourse
on
optimizing
subsequent
technologies
advancement
chips.
IEEE photonics journal,
Journal Year:
2024,
Volume and Issue:
16(2), P. 1 - 7
Published: Jan. 11, 2024
A
lithium
niobate
thin-film(LNTF)
electro-optic
modulator(EOM)
with
segmented
electrode
structure
is
investigated,
and
the
influence
of
modulator's
structural
configuration
on
its
performance
achieved.
In
contrast
to
conventional
couplers,
design
incorporates
a
2x2
S-shaped
directional
coupler.
Our
modulator
achieves
bandwidth
nearly
110
GHz
half-wave
voltage
1.45
Vcm.
comparative
analysis
between
two
configurations:
one
SiO
2
cladding
covering
entire
surface
other
coverage
limited
gaps,
which
reveals
latter
potential
for
enhancing
device
performance.
The
accuracy
simulation
results
substantiated
through
both
software
theoretical
calculations.
provide
valuable
insights
LNTF
EOM,
highlighting
efficacy
proposed
structure.
