Acta Optica Sinica, Journal Year: 2024, Volume and Issue: 44(15), P. 1513023 - 1513023
Published: Jan. 1, 2024
Acta Optica Sinica, Journal Year: 2024, Volume and Issue: 44(15), P. 1513023 - 1513023
Published: Jan. 1, 2024
Current Opinion in Solid State and Materials Science, Journal Year: 2024, Volume and Issue: 29, P. 101144 - 101144
Published: Feb. 20, 2024
Language: Английский
Citations
13Nature Reviews Electrical Engineering, Journal Year: 2024, Volume and Issue: 1(6), P. 358 - 373
Published: June 6, 2024
Language: Английский
Citations
10Advanced Materials, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 13, 2025
Abstract As a phase change material (PCM), antimony exhibits set of desirable properties that make it an interesting candidate for photonic memory applications. These include large optical contrast between crystalline and amorphous solid states over wide wavelength range. Switching the is possible on nanosecond timescales by applying short heating pulses. The glass state reached through melting rapid quenching supercooled liquid regime. While initial final are easily characterized, little known about path to forming glass. Here we resolve entire switching cycle with femtosecond resolution in stroboscopic pump‐probe measurements combine experimental results ab‐initio molecular dynamics simulations. formation process revealed be complex multi‐step process, where intermediate transient exhibit distinct even larger contrasts than those observed crystal provided quantitative understanding forms basis exploitation high bandwidth
Language: Английский
Citations
1Advanced Materials, Journal Year: 2024, Volume and Issue: 36(27)
Published: April 15, 2024
The artificial brain is conceived as advanced intelligence technology, capable to emulate in-memory processes occurring in the human by integrating synaptic devices. Within this context, improving functionality of transistors increase information processing density neuromorphic chips a major challenge field. In article, Li-ion migration promoting long afterglow organic light-emitting transistors, which display exceptional postsynaptic brightness 7000 cd m
Language: Английский
Citations
7Deleted Journal, Journal Year: 2024, Volume and Issue: 1(1)
Published: Sept. 17, 2024
Abstract Silicon photonics arises as a viable solution to address the stringent resource demands of emergent technologies, such neural networks. Within this framework, photonic memories are fundamental building blocks integrated circuits that have not yet found standardized due several trade-offs among different metrics energy consumption, speed, footprint, or fabrication complexity, name few. In particular, memory exhibiting ultra-high endurance performance (>10 6 cycles) has been elusive date. Here, we report an silicon volatile using vanadium dioxide (VO 2 ) record cyclability up 10 7 cycles without degradation. Moreover, our features ultra-compact footprint below 5 µm with potential for nanosecond and picojoule programming performance. Our could find application in emerging applications demanding high number updates, networks situ training.
Language: Английский
Citations
6Optical Materials, Journal Year: 2024, Volume and Issue: 151, P. 115372 - 115372
Published: April 16, 2024
Language: Английский
Citations
5InfoMat, Journal Year: 2025, Volume and Issue: unknown
Published: March 9, 2025
Abstract Dynamic detection is crucial for intelligent vision systems, enabling applications like autonomous vehicles and advanced surveillance. Event‐based sensors, which convert illumination variations into sparse event spikes, are highly effective dynamic with low data redundancy. However, current event‐based sensors simplified photosensitive capacitor structures face limitations, particularly in their spectral response, hinders information acquisition multispectral scenes. Here, we introduce a two‐terminal thin‐film sensor that innovatively integrates an inorganic oxide p–n junction the pyro‐phototronic effect, synergistically combining photovoltaic pyroelectric mechanisms. This innovation enables spiking signals tenfold increase responsivity, range of 110 dB, extended response from ultraviolet (UV) to near‐infrared (NIR). With array, these accurately extract fingerprint edge features even under low‐light conditions, benefiting high sensitivity minor luminance variations. Additionally, sensors' broadband captures richer information, achieving 99.25% accuracy gesture recognition while reducing processing by over 65%. approach effectively eliminates redundant minimizing loss, offering promising alternative perception technologies. image
Language: Английский
Citations
0Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(28)
Published: Aug. 27, 2024
Abstract Phase change materials (PCMs) have gained a tremendous interest as means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous crystalline reversible transition. Recently, such Sb 2 S 3 emerged particularly promising low loss PCMs, with both refractive index modulations and transparency in visible near‐infrared. Controlling local phase transition this material is of major importance for future applications, an appealing method do so exploit pulsed lasers. Yet, physics limits involved switching are not yet well understood. Here, laser‐induced investigated, focusing specifically on mechanisms that drive optically induced amorphization, multi‐physics considerations including thermal properties PCM its environment. The laser energy threshold reversibly changing determined theoretical analysis experimental investigation, only between fully states but also partially recrystallized states. Then, non‐negligible impact material's polycrystallinity anisotropy power thresholds revealed. Finally, challenges related amorphization thick layers addressed, strategies overcome them. These results enable qualitative quantitative understanding behind optically‐induced layers.
Language: Английский
Citations
2Optics Continuum, Journal Year: 2024, Volume and Issue: 3(7), P. 1061 - 1061
Published: June 11, 2024
A fast-integrated optical neuron is proposed based on a micro-ring resonator structure. The GST phase change material used in the MRR structure, and switching achieved by electrical actuation of this material. nonlinear activation function extracted through three-dimensional simulations. then employed three-layer perceptron network using function, its performance examined classification handwritten digits. overall compared with previous neural networks. Simulations show an ultra-fast time 200fs, which one order magnitude faster than best-reported value, accuracy 98.9% (in MNIST digits dataset) among best results, while estimated footprint relatively small.
Language: Английский
Citations
0Journal of Lightwave Technology, Journal Year: 2024, Volume and Issue: 42(22), P. 7888 - 7893
Published: Aug. 15, 2024
Language: Английский
Citations
0