Band-mixing’s k-dependence in InGaAs quantum wells unveiled by pump-probe experimental data analyzed with a k ⋅ p -based intersubband scattering model

New Journal of Physics, Journal Year: 2025, Volume and Issue: 27(4), P. 043018 - 043018

Published: April 1, 2025

Abstract Using a first-order k ⋅ mathvariant="bold">p model for electron intersubband scattering in quantum wells (QW), our group re-analyzed pump-probe experiments performed the mid-nineties that investigated and intrasubband dynamics two InGaAs/AlInAs QWs grown same molecular beam epitaxy (MBE) laboratory. This work confirms measured lifetime can only be interpreted through rigorous approach not considers hyperbolic subband dispersion but also band-mixing’s k -dependence, which slows down all mechanisms. The latter includes enhanced wavefunction confinement with . Concomitantly, this analysis range of interface roughness parameters (IFR) potential alloy disorder (AD), whose values are very important designing many existing/new devices. Just by using one-band model, overall 2–1 rate is ∼66% overestimated QW tuned at λ 21 ∼ 5 µ m, while eight-band good agreement experimental data obtained properly choosing these material parameters. However, due to inherent time resolution fact AD IFR scatterings processes nature, fitted large uncertainty. suggested line what typically used cascade laser simulations, smaller. Pump-probe sufficient capture accuracy and, therefore, should associated other characterization techniques, such as ultra-high vacuum scanning tunneling microscope or tomography. devices’ simulation tools could benefit from derived work, above all, reaffirms modeling optimizing devices, it crucial consider correct but, most band-mixing, strongly -dependent.

Language: Английский

First-order k·p methods for electron intersubband scatterings in quantum wells

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 110(16)

Published: Oct. 21, 2024

Language: Английский