Enhancement of Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes Using Cooperative Scattering Structures on the n‐AlGaN Layer DOI Open Access
Zhenyu Chen,

Shuang Zhang,

Yongming Zhao

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 24, 2025

Abstract The efficiency of AlGaN based deep ultraviolet light‐emitting diode (DUV LEDs) are mainly hindered by the light extraction issue. In this work, an innovative cooperative scattering structure is introduced that combines a nanopore configuration with aluminum (Al) nanoparticle array on n‐AlGaN layer DUV LEDs. integration these two arrays can enhance mitigating total internal reflection at device interface. nanopores formed surface electrochemical etching and optimized varying voltage, while Al particles thermal annealing. With help structure, output power (LOP) LEDs significantly increased 77.6% notable 2.2 times achieved in its (LEE) enhancement factor. Moreover, Finite‐Difference Time‐Domain (FDTD) simulations have validated considerably enhances LEE for both Transverse Electric (TE) Magnetic (TM) modes, respectively. This work paves way to fabricate high via novel designs.

Language: Английский

Enhancement of Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes Using Cooperative Scattering Structures on the n‐AlGaN Layer DOI Open Access
Zhenyu Chen,

Shuang Zhang,

Yongming Zhao

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 24, 2025

Abstract The efficiency of AlGaN based deep ultraviolet light‐emitting diode (DUV LEDs) are mainly hindered by the light extraction issue. In this work, an innovative cooperative scattering structure is introduced that combines a nanopore configuration with aluminum (Al) nanoparticle array on n‐AlGaN layer DUV LEDs. integration these two arrays can enhance mitigating total internal reflection at device interface. nanopores formed surface electrochemical etching and optimized varying voltage, while Al particles thermal annealing. With help structure, output power (LOP) LEDs significantly increased 77.6% notable 2.2 times achieved in its (LEE) enhancement factor. Moreover, Finite‐Difference Time‐Domain (FDTD) simulations have validated considerably enhances LEE for both Transverse Electric (TE) Magnetic (TM) modes, respectively. This work paves way to fabricate high via novel designs.

Language: Английский

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