Realizing Ultrafast Respond Speed and High Detectivity for Gate-Modulated Self-Powered Photodetector with NbSe2/MoS2 van der Waals Heterostructure DOI
Yunxin Li,

Sixian He,

Chengdong Yin

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: May 15, 2025

2D materials offer an effective strategy for constructing self-powered Schottky junction devices with rapid response and high sensitivity. However, a single type of energy band coupling at the interface hinders widespread applications photodetectors, while changes types also face great challenges. Modulating Fermi level bands by gate voltage has emerged as promising approach. In this study, gate-modulated photodetector is fabricated based on van der Waals (vdWs) heterojunction composed metallic NbSe2 semiconducting MoS2. Due to its NbSe2/MoS2 vdWs heterostructure, device exhibits maximum responsivity 455.3 mA/W, excellent detectivity 1.9 × 1012 Jones, ultrafast rise/decay time 17/18 μs, broad spectral sensitivity under irradiation ranging from 405 980 nm zero bias. Furthermore, corresponding 40 V are around 7 times greater than those -40 V. This work demonstrates significant potential integrated into heterostructure design high-performance broadband near-infrared communication.

Language: Английский

High-Performance ZnO/CdTe/Ge/Si Heterojunction Photodetector for Short/Mid-Wavelength Detection DOI

Othman Abed Fahad,

Bilal K. Al‐Rawi,

Asmiet Ramizy

et al.

Sensors and Actuators A Physical, Journal Year: 2025, Volume and Issue: unknown, P. 116198 - 116198

Published: Jan. 1, 2025

Language: Английский

Citations

1
UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure DOI Creative Commons
Mingyang Shen, Hao Liu, Qi Wang

et al.

Sensors, Journal Year: 2025, Volume and Issue: 25(7), P. 2115 - 2115

Published: March 27, 2025

Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, not yet been utilized in DmPDs. In this work, we fabricate high-performance DmPD based on graphene/InP Van der Waals heterostructure facile way, achieving broadband from ultraviolet-visible near-infrared wavelengths. The device incorporates two top electrodes contacting monolayer chemical vapor deposition (CVD) graphene bottom electrode the backside of an InP substrate. By flexibly switching among these three electrodes, as-fabricated can operate self-powered photovoltaic mode for energy-efficient high-speed imaging or biased photoconductive detecting weak light signals, fully demonstrating its multifunctional detection capabilities. Specifically, mode, leverages vertically configured Schottky junction achieve on/off ratio 8 × 103, responsivity 49.2 mA/W, detectivity 4.09 1011 Jones, ultrafast response, with rising time (τr) falling (τf) 2.8/6.2 μs. at 1 V bias, photogating effect enhances 162.5 A/W. This work advances development InP-based optoelectronic devices.

Language: Английский

Citations

0
Realizing Ultrafast Respond Speed and High Detectivity for Gate-Modulated Self-Powered Photodetector with NbSe2/MoS2 van der Waals Heterostructure DOI
Yunxin Li,

Sixian He,

Chengdong Yin

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: May 15, 2025

2D materials offer an effective strategy for constructing self-powered Schottky junction devices with rapid response and high sensitivity. However, a single type of energy band coupling at the interface hinders widespread applications photodetectors, while changes types also face great challenges. Modulating Fermi level bands by gate voltage has emerged as promising approach. In this study, gate-modulated photodetector is fabricated based on van der Waals (vdWs) heterojunction composed metallic NbSe2 semiconducting MoS2. Due to its NbSe2/MoS2 vdWs heterostructure, device exhibits maximum responsivity 455.3 mA/W, excellent detectivity 1.9 × 1012 Jones, ultrafast rise/decay time 17/18 μs, broad spectral sensitivity under irradiation ranging from 405 980 nm zero bias. Furthermore, corresponding 40 V are around 7 times greater than those -40 V. This work demonstrates significant potential integrated into heterostructure design high-performance broadband near-infrared communication.

Language: Английский

Citations

0