A high-power narrow-linewidth microlaser based on active-passive lithium niobate photonic integration DOI Open Access
Zhiwei Fang,

Shupeng Yu,

Yuan Zhou

et al.

Published: Oct. 9, 2023

We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The chip is fabricated on monolithically active (i.e., Er3+-doped) passive non-doped) thin film lithium niobate (TFLN) substrate in which the cavity constructed two Sagnac loop reflectors TFLN. FP achieves of 126.35 μW a linewidth 33.6 kHz.

Language: Английский

A high-power narrow-linewidth microlaser based on active-passive lithium niobate photonic integration DOI Open Access
Zhiwei Fang,

Shupeng Yu,

Yuan Zhou

et al.

Published: Oct. 9, 2023

We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The chip is fabricated on monolithically active (i.e., Er3+-doped) passive non-doped) thin film lithium niobate (TFLN) substrate in which the cavity constructed two Sagnac loop reflectors TFLN. FP achieves of 126.35 μW a linewidth 33.6 kHz.

Language: Английский

Citations

0
A high-power narrow-linewidth microlaser based on active-passive lithium niobate photonic integration DOI Open Access
Zhiwei Fang,

Shupeng Yu,

Yuan Zhou

et al.

Published: Oct. 9, 2023

We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The chip is fabricated on monolithically active (i.e., Er3+-doped) passive non-doped) thin film lithium niobate (TFLN) substrate in which the cavity constructed two Sagnac loop reflectors TFLN. FP achieves of 126.35 μW a linewidth 33.6 kHz.

Language: Английский

Citations

0