Electrical properties and evaluation of band tail states in Mg doped p-type multilayer hBN DOI
Shambel Abate Marye,

Ravi Ranjan Kumar,

Lê Thị Phương Thảo

et al.

Journal of Applied Physics, Journal Year: 2024, Volume and Issue: 136(12)

Published: Sept. 23, 2024

A series of Mg doped p-type multi-layered hBN films were prepared by atmospheric pressure chemical vapor deposition. Temperature dependent conductivity measurements performed from 0.1 Hz to 10 MHz analyze the characteristics tail states close valence band edge. Jonscher's power law (Aωs) is successfully applied understand charge carrier transport through these states. In this work, exponent S increases 0.6 → 0.8, 0.8 0.995, and 1.4 1.6 for samples B (precursor temperature, 750 °C), D (850 E (900 indicating that non-overlapping small polaron tunneling dominates 548 K. Polaron binding energies 0.2–0.40 eV distances <4.9 Å are calculated, confirming localized The density near Fermi level N(EF) was extracted a fit AC data, yielding values 1015 1017eV−1cm−3 as precursor temperature increases. Singular acceptor levels 74, 30, 17 meV identified each sample. hole concentration 6.5 × 1017 1 1018 cm−3 mobility 18 25 cm2/V s measured at 300 From RC fitting, recombination lifetimes 1.2, 0.4, 0.35 μs determined. Fermi's golden rule used determine an optical joint 1.1 1021 eV−1 Overall, we show effective method evaluate midgap in 2D (two-dimensional) materials EF possesses sufficient electrical properties be integrated into wide range semiconductor applications.

Language: Английский

Electrical properties and evaluation of band tail states in Mg doped p-type multilayer hBN DOI
Shambel Abate Marye,

Ravi Ranjan Kumar,

Lê Thị Phương Thảo

et al.

Journal of Applied Physics, Journal Year: 2024, Volume and Issue: 136(12)

Published: Sept. 23, 2024

A series of Mg doped p-type multi-layered hBN films were prepared by atmospheric pressure chemical vapor deposition. Temperature dependent conductivity measurements performed from 0.1 Hz to 10 MHz analyze the characteristics tail states close valence band edge. Jonscher's power law (Aωs) is successfully applied understand charge carrier transport through these states. In this work, exponent S increases 0.6 → 0.8, 0.8 0.995, and 1.4 1.6 for samples B (precursor temperature, 750 °C), D (850 E (900 indicating that non-overlapping small polaron tunneling dominates 548 K. Polaron binding energies 0.2–0.40 eV distances <4.9 Å are calculated, confirming localized The density near Fermi level N(EF) was extracted a fit AC data, yielding values 1015 1017eV−1cm−3 as precursor temperature increases. Singular acceptor levels 74, 30, 17 meV identified each sample. hole concentration 6.5 × 1017 1 1018 cm−3 mobility 18 25 cm2/V s measured at 300 From RC fitting, recombination lifetimes 1.2, 0.4, 0.35 μs determined. Fermi's golden rule used determine an optical joint 1.1 1021 eV−1 Overall, we show effective method evaluate midgap in 2D (two-dimensional) materials EF possesses sufficient electrical properties be integrated into wide range semiconductor applications.

Language: Английский

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