Photonics Research,
Journal Year:
2021,
Volume and Issue:
9(10), P. 2104 - 2104
Published: Aug. 24, 2021
Reconfigurable
nanophotonic
components
are
essential
elements
in
realizing
complex
and
highly
integrated
photonic
circuits.
Here
we
report
a
novel
concept
for
devices
with
functionality
to
dynamically
control
guided
light
the
near-visible
spectral
range,
which
is
illustrated
by
reconfigurable
non-volatile
(
1×2
)
switch
using
an
ultracompact
active
metasurface.
The
made
of
two
sets
nanorod
arrays
id="m2">
TiO
antimony
trisulfide
id="m3">
SbS3
),
low-loss
phase-change
material
(PCM),
patterned
on
silicon
nitride
waveguide.
metasurface
creates
effective
multimode
interferometer
that
forms
image
input
mode
at
end
stem
waveguide
routes
this
toward
one
output
ports
depending
phase
PCM
nanorods.
Remarkably,
our
metasurface-based
id="m4">
enjoys
coupling
length
5.5
μm
record
high
bandwidth
(22.6
THz)
compared
other
PCM-based
switches.
Furthermore,
device
exhibits
low
losses
region
id="m5">
∼dB
cross
talk
id="m6">
form="prefix">−
11.24
over
wide
THz).
Our
proposed
paves
way
compact
efficient
routers
switches
applications
quantum
computing,
neuromorphic
networking,
biomedical
sensing
optogenetics.
Abstract
Nonvolatile
switching
is
still
a
missing
functionality
in
current
mainstream
silicon
photonics
complementary
metal‐oxide‐semiconductor
platforms.
Fundamentally,
nonvolatile
stands
for
the
ability
to
switch
between
two
or
more
photonic
states
reversibly
without
needing
additional
energy
hold
each
state.
Therefore,
such
feature
may
push
one
step
further
potential
of
by
offering
new
ways
achieving
reconfigurability
with
ultrasmall
consumption.
Here,
detailed
review
developments
that
enable
waveguide
devices
provided.
Nonvolatility
successfully
demonstrated
either
based
on
device
engineering
hybrid
integration
waveguides
materials
exhibiting
unique
optical
properties.
Furthermore,
several
approaches
high
evolving
toward
behavior
enhanced
performance
are
also
being
explored.
In
most
cases,
many
development
steps
necessary
ensure
reliable
devices.
However,
this
research
field
expected
progress
coming
years
boosted
and
emerging
applications
benefiting
from
functionality,
as
paradigms
computing
advanced
reconfigurable
circuits
programmable
systems.
Nanophotonics,
Journal Year:
2022,
Volume and Issue:
11(15), P. 3437 - 3446
Published: June 22, 2022
We
demonstrate
a
multilevel
optical
memristive
switch
based
on
silicon
Fabry-Perot
resonator.
The
resonator
is
constructed
by
pair
of
waveguide
Bragg
gratings
at
the
ends
multimode
interferometer
(MMI)
covered
with
sub-micrometer-size
Ge
ACS Applied Electronic Materials,
Journal Year:
2023,
Volume and Issue:
6(1), P. 73 - 119
Published: Dec. 29, 2023
Due
to
the
fast
evolution
of
information
technology,
high-speed
and
scalable
memory
devices
are
being
investigated
for
data
storage
data-driven
computation.
Resistive
switching
random
access
(RRAM)
is
one
very
popular
types
memristors,
because
its
quick
program/erase
speed
high
density
as
a
result
simple
two-terminal
structure,
low
power
consumption,
cost
fabrication.
In
this
review,
market
promising
memristor-based
memories
smart
systems
examined.
The
described
classified
according
their
I–V
behavior
underline
physical
mechanisms.
various
filament
mechanisms
RRAM
memristor,
including
valence
change
mechanism
(VCM),
electrochemical
metallization
(ECM),
thermochemical
(TCM),
especially
highlighted
in
structures.
performance
resistive
with
different
reported
electrode
materials
layers
summarized.
This
study
provides
detailed
review
deposition
techniques
used
surface
modification
coating.
two
major
areas
interest,
chemical
vapor
influence
parameter
on
switching,
discussed
detail.
prospective
applications
memristors
fields
such
security,
neuromorphic
computing,
non-volatile
logic
artificial
intelligence
addressed
briefly
well
future
outlook.
Neuromorphic Computing and Engineering,
Journal Year:
2021,
Volume and Issue:
1(1), P. 014004 - 014004
Published: July 16, 2021
Abstract
Photonic
integrated
circuits
currently
use
platform
intrinsic
thermo-optic
and
electro-optic
effects
to
implement
dynamic
functions
such
as
switching,
modulation
other
processing.
Currently,
there
is
a
drive
field
programmable
photonic
circuits,
need
which
only
magnified
by
new
neuromorphic
quantum
computing
applications.
The
most
promising
non-volatile
components
employ
phase
change
materials
GST
GSST,
had
their
origin
in
electronic
memory.
However,
the
optical
domain,
these
compounds
introduce
significant
losses
potentially
preventing
large
number
of
Here,
we
evaluate
two
newly
introduced
low
loss
materials,
Sb
2
S
3
Se
,
on
silicon
nitride
for
future
implementation
computing.
We
focus
study
Mach–Zehnder
interferometers
that
operate
at
O
C
bands
demonstrate
performance
system.
Our
measurements
show
an
insertion
below
0.04
dB
μm
−1
lower
than
0.09
cladded
devices
both
amorphous
crystalline
phases.
effective
refractive
index
contrast
SiNx
was
measured
be
0.05
1310
nm
0.02
1550
nm,
whereas
it
0.03
highlighting
device.
Optics Express,
Journal Year:
2021,
Volume and Issue:
29(3), P. 3503 - 3503
Published: Jan. 9, 2021
In
the
past
decades,
silicon
photonic
integrated
circuits
(PICs)
have
been
considered
a
promising
approach
to
solve
bandwidth
bottleneck
in
optical
communications
and
interconnections.
Despite
rapid
advances,
large-scale
PICs
still
face
series
of
technical
challenges,
such
as
large
footprint,
high
power
consumption,
lack
memory,
resulting
from
active
tuning
methods
used
control
waves.
These
challenges
can
be
partially
addressed
by
combining
chalcogenide
phase
change
materials
(PCMs)
Ge
2
Sb
Te
5
(GST)
with
photonics,
especially
applicable
reconfigurable
circuit
applications
due
nonvolatile
nature
GST.
We
systematically
investigate
process
induced
electrical
pulses
GST-loaded
waveguide
multimode
interferometer.
Using
pulse
excitation
amorphize
GST
has
clear
advantage
terms
operation
speed
energy
efficiency,
while
is
more
suitable
for
integration
because
it
does
not
require
complex
routing.
This
study
helps
us
better
understand
push
forward
further
development
Si-GST
hybrid
platform,
bringing
new
potential
applications.
MRS Bulletin,
Journal Year:
2022,
Volume and Issue:
47(5), P. 502 - 510
Published: May 1, 2022
Abstract
Neuromorphic
algorithms
achieve
remarkable
performance
milestones
in
tasks
where
humans
have
traditionally
excelled.
The
breadth
of
data
generated
by
these
paradigms
is,
however,
unsustainable
conventional
computing
chips.
In-memory
hardware
aims
to
mimic
biological
neural
networks
and
has
emerged
as
a
viable
path
overcoming
fundamental
limitations
the
von
Neumann
architecture.
By
eliminating
latency
energy
losses
associated
with
transferring
between
memory
central
processing
unit
(CPU),
systems
promise
improve
on
both
speed
energy.
Photonic
implementations
using
on-chip,
nonvolatile
memories
are
particularly
promising
they
aim
deliver
energy-efficient,
high-speed,
high-density
within
photonic
multiplexing
advantages
optics.
In
this
article,
we
overview
recent
progress
direction
that
integrates
phase-change
material
(PCM)
elements
integrated
optoelectronics.
We
compare
performances
PCM
devices
optoelectronic
programming
schemes
show
consumption
can
be
significantly
reduced
60
pJ
picosecond
(ps)
optical
pulse
plasmonic
nanogap
approaching
1
GHz.
With
energy-efficient
waveguide
memories,
concepts
in-memory
implemented
based
crossbar
arrays.
Compared
digital
electronic
accelerators:
application-specific
circuits
(ASICs)
graphics
units
(GPUs),
cores
1−3
orders
higher
compute
density
efficiency,
although
much
more
work
toward
commercialization
is
still
required.
Graphical
abstract
International Journal of Extreme Manufacturing,
Journal Year:
2023,
Volume and Issue:
6(2), P. 022001 - 022001
Published: Dec. 13, 2023
Abstract
In
the
past
decade,
there
has
been
tremendous
progress
in
integrating
chalcogenide
phase-change
materials
(PCMs)
on
silicon
photonic
platform
for
non-volatile
memory
to
neuromorphic
in-memory
computing
applications.
particular,
these
non
von
Neumann
computational
elements
and
systems
benefit
from
mass
manufacturing
of
integrated
circuits
(PICs)
8-inch
wafers
using
a
130
nm
complementary
metal-oxide
semiconductor
line.
Chip
based
deep-ultraviolet
lithography
electron-beam
enables
rapid
prototyping
PICs,
which
can
be
with
high-quality
PCMs
wafer-scale
sputtering
technique
as
back-end-of-line
process.
this
article,
we
present
an
overview
recent
advances
waveguide
PCM
cells,
functional
devices,
systems,
emphasis
fabrication
integration
processes
attain
state-of-the-art
device
performance.
After
short
discuss
properties
layer
well
light
guiding
layer,
namely,
germanium
platforms.
Next,
cleanroom
flow
devices
thin
films
nanowires,
waveguides
plasmonic
microheaters
electrothermal
switching
mixed-mode
operation.
Finally,
photonic–electronic
is
reviewed.
These
consist
arrays
associative
learning,
matrix-vector
multiplication,
pattern
recognition.
With
large-scale
integration,
neuromorphicphotonic
paradigm
holds
promise
outperform
digital
electronic
accelerators
by
taking
advantages
ultra-high
bandwidth,
high
speed,
energy-efficient
operation
running
machine
learning
algorithms.
Abstract
Silicon‐nitride‐on‐insulator
(Si
3
N
4
)
photonic
circuits
have
seen
tremendous
advances
in
many
applications,
such
as
on‐chip
frequency
combs,
Lidar,
telecommunications,
and
spectroscopy.
So
far,
the
best
film
quality
has
been
achieved
with
low
pressure
chemical
vapor
deposition
(LPCVD)
high‐temperature
annealing
(1200°C).
However,
high
processing
temperatures
pose
challenges
to
cointegration
of
Si
pre‐processed
silicon
electronic
devices,
lithium
niobate
on
insulator
(LNOI),
Ge‐on‐Si
photodiodes.
This
limits
LPCVD
a
front‐end‐of‐line
process.
Here,
ultralow‐loss
photonics
based
room‐temperature
reactive
sputtering
is
demonstrated.
Propagation
losses
5.4
dB
m
−1
after
400°C
3.5
800°C
are
achieved,
enabling
ring
resonators
highest
optical
factors
>
10
million
an
average
factor
7.5
million.
To
knowledge,
these
lowest
propagation
temperature
.
ultralow
loss
enables
generation
microresonator
soliton
combs
threshold
powers
1.1
mW.
The
introduced
process
offers
full
complementary
metal
oxide
semiconductor
(CMOS)
compatibility
front‐end
electronics
photonics.
could
enable
hybrid
3D
integration
waveguides
integrated
lasers
insulator.
Optical Materials Express,
Journal Year:
2023,
Volume and Issue:
13(12), P. 3553 - 3553
Published: Nov. 13, 2023
The
burgeoning
of
artificial
intelligence
has
brought
great
convenience
to
people’s
lives
as
large-scale
computational
models
have
emerged.
Artificial
intelligence-related
applications,
such
autonomous
driving,
medical
diagnosis,
and
speech
recognition,
experienced
remarkable
progress
in
recent
years;
however,
systems
require
vast
amounts
data
for
accurate
inference
reliable
performance,
presenting
challenges
both
speed
power
consumption.
Neuromorphic
computing
based
on
photonic
integrated
circuits
(PICs)
is
currently
a
subject
interest
achieve
high-speed,
energy-efficient,
low-latency
processing
alleviate
some
these
challenges.
Herein,
we
present
an
overview
the
current
platforms
available,
materials
which
potential
be
with
PICs
further
hybrid
devices
neuromorphic
computing.