Characterization of Bi-doped FAPbI3 perovskite films investigated by X-ray absorption spectroscopy DOI Creative Commons

Tirapat Wechprasit,

Atipong Bootchanont, Yingyot Infahsaeng

et al.

Scientific Reports, Journal Year: 2025, Volume and Issue: 15(1)

Published: May 26, 2025

A thorough investigation of perovskite structures formed through doping is essential for advancing the efficiency and stability solar cells. In this study, Bi-doped FAPbI3 films with varying Bi concentrations (0.5-2%) were fabricated using a spin-coating technique on ITO glass substrates. Then films' phase structure, local optical characteristics analyzed. X-ray diffraction (XRD) analysis revealed that pristine film exhibited both hexagonal cubic phases, indicating structural instability. contrast, predominantly displayed notable reduction in XRD peak intensity corresponding to phase. UV-Vis spectroscopy showed undoped had an absorption edge visible-near infrared range, while Bi-doping caused redshift, band gap. The calculated results show gaps decrease increasing Bi, from value 1.49 (pure) 1.43 (2% Bi) eV. near structure (XANES) confirmed oxidation states Pb2+ Bi3+ ions across all samples, replacing Pb structure. Photoluminescence (PL) measurements increased PL 1% (7 × 105) compared (4.7 105), suggesting carrier recombination. These findings demonstrate potential stabilize improved optoelectronic properties.

Language: Английский

Characterization of Bi-doped FAPbI3 perovskite films investigated by X-ray absorption spectroscopy DOI Creative Commons

Tirapat Wechprasit,

Atipong Bootchanont, Yingyot Infahsaeng

et al.

Scientific Reports, Journal Year: 2025, Volume and Issue: 15(1)

Published: May 26, 2025

A thorough investigation of perovskite structures formed through doping is essential for advancing the efficiency and stability solar cells. In this study, Bi-doped FAPbI3 films with varying Bi concentrations (0.5-2%) were fabricated using a spin-coating technique on ITO glass substrates. Then films' phase structure, local optical characteristics analyzed. X-ray diffraction (XRD) analysis revealed that pristine film exhibited both hexagonal cubic phases, indicating structural instability. contrast, predominantly displayed notable reduction in XRD peak intensity corresponding to phase. UV-Vis spectroscopy showed undoped had an absorption edge visible-near infrared range, while Bi-doping caused redshift, band gap. The calculated results show gaps decrease increasing Bi, from value 1.49 (pure) 1.43 (2% Bi) eV. near structure (XANES) confirmed oxidation states Pb2+ Bi3+ ions across all samples, replacing Pb structure. Photoluminescence (PL) measurements increased PL 1% (7 × 105) compared (4.7 105), suggesting carrier recombination. These findings demonstrate potential stabilize improved optoelectronic properties.

Language: Английский

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