Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures DOI Creative Commons
Jo`shqin Abdullayev, I. B. Sapaev

East European Journal of Physics, Journal Year: 2024, Volume and Issue: 4, P. 329 - 333

Published: Dec. 8, 2024

This article elucidates the dependence of ideality factor on both internal functional parameters and external factors in semiconductors at low temperatures. We have explored influence such as temperature source voltage. Through numerical modeling theoretical analysis, we thoroughly investigate dependencies semiconductor material parameters—including doping concentration, bandgap semiconductors, lifetime charge carriers, geometric dimensions ranging from micrometers to nanometers— p-n p-i-n junction structures. Our analysis spans cryogenic temperatures 50 K 300 K, with intervals K. To conduct this study, focused structures fabricated Si GaAs. The selected model features a=10 μm, b=8 c=6 μm. thickness i-layer ranged 10 µm 100 10- increments. Increasing results a corresponding rise factor.

Language: Английский

Theoretical analysis of incomplete ionization on the electrical behavior of radial p-n junction structures DOI Open Access
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

et al.

Low Temperature Physics, Journal Year: 2025, Volume and Issue: 51(1), P. 60 - 64

Published: Jan. 1, 2025

In this work, we studied the electrical behavior of radial p-n junctions based on submicron Silicon (Si) and Gallium Arsenide (GaAs) structures, with a focus implications incomplete ionization atoms below 800 K. By solving Poisson equation in cylindrical coordinate system, derived solutions for structures core radius R = 0.5 μm. An analytical solution was obtained, providing probability P(T) dopant range 0–800 K, as well variation space charge density ρ(T), temperature.

Language: Английский

Citations

0
Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures DOI Creative Commons
Jo`shqin Abdullayev, I. B. Sapaev

East European Journal of Physics, Journal Year: 2024, Volume and Issue: 4, P. 329 - 333

Published: Dec. 8, 2024

This article elucidates the dependence of ideality factor on both internal functional parameters and external factors in semiconductors at low temperatures. We have explored influence such as temperature source voltage. Through numerical modeling theoretical analysis, we thoroughly investigate dependencies semiconductor material parameters—including doping concentration, bandgap semiconductors, lifetime charge carriers, geometric dimensions ranging from micrometers to nanometers— p-n p-i-n junction structures. Our analysis spans cryogenic temperatures 50 K 300 K, with intervals K. To conduct this study, focused structures fabricated Si GaAs. The selected model features a=10 μm, b=8 c=6 μm. thickness i-layer ranged 10 µm 100 10- increments. Increasing results a corresponding rise factor.

Language: Английский

Citations

0