Review on recent developments in the ferroelectric material SrMnO3
Rui He,
No information about this author
Inpyo Hong,
No information about this author
S Kim
No information about this author
et al.
Hybrid Advances,
Journal Year:
2025,
Volume and Issue:
unknown, P. 100456 - 100456
Published: March 1, 2025
Language: Английский
Ferroelectric HfO2–ZrO2 Multilayers with Reduced Wake-Up
ACS Omega,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 28, 2025
Since
the
discovery
of
ferroelectricity
in
HfO2
thin
films,
significant
research
has
focused
on
Zr-doped
and
solid-solution
(Hf,Zr)O2
films.
Functional
properties
can
be
further
tuned
via
multilayering;
however,
this
approach
not
yet
been
fully
explored
HfO2-ZrO2
This
work
demonstrates
a
50
nm-thick,
solution-processed
multilayer
film,
marking
it
as
thickest
film
to
date
exhibiting
ferroelectric
properties.
The
structure
was
confirmed
through
transmission
electron
microscopy
(TEM)
energy-dispersive
X-ray
spectroscopy,
with
high-resolution
TEM
revealing
grain
continuity
across
multiple
layers.
finding
indicates
that
polar
phase
originally
paraelectric
ZrO2
layer
stabilized
by
layer.
attains
remanent
polarization
9
μC
cm-2
exhibits
an
accelerated
wake-up
behavior,
attributed
its
higher
breakdown
strength,
resulting
from
incorporation
interfaces.
These
results
offer
faster
mechanism
for
thick
hafnia
Language: Английский
High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering
Yefan Zhang,
No information about this author
Xiaopeng Luo,
No information about this author
Xiao Long
No information about this author
et al.
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(13)
Published: March 1, 2025
In
this
paper,
we
report
a
high
endurance
and
low
coercive
voltage
(Vc)
ferroelectric
tunnel
junction
(FTJ)
device
by
replacing
the
TiN
top
electrode
with
W
after
annealing.
This
method
implants
TiNOx
thin
layer,
which
reduces
leakage
current
increases
breakdown
(Vbd),
leading
to
better
endurance.
It
can
also
effectively
promote
formation
of
orthogonal
phase
inhibit
tetragonal
during
wake-up
process,
contributes
reducing
Vc.
Therefore,
proposed
5
nm
H0.5Z0.5O2
(HZO)
FTJ
exhibits
excellent
performances,
such
as
Vc
(0.49
V),
small
Vc/Vbd
ratio
(19.1%),
(>1011),
double
remanent
polarization
(2Pr
=
41
μC/cm2),
are
frontier
reported
HfO2-based
FTJ.
The
results
strongly
indicate
that
has
potential
in
addressing
frequent
weight
changes
generated
brain-like
computational
training
learning.
Language: Английский
Elucidating structure-property correlations in ferroelectric Hf0.5Zr0.5O2 films using variational autoencoders
Materials & Design,
Journal Year:
2025,
Volume and Issue:
254, P. 114020 - 114020
Published: May 5, 2025
Language: Английский
Ultrathin fluorite nanobilayer films with excellent ferroelectricity for high-density memory applications
Journal of Material Science and Technology,
Journal Year:
2025,
Volume and Issue:
unknown
Published: May 1, 2025
Language: Английский
A Theoretical Investigation on Equilibrium Magnetic Properties in Nanowire Arrays
Physica Scripta,
Journal Year:
2024,
Volume and Issue:
99(9), P. 095906 - 095906
Published: July 15, 2024
Abstract
The
paper
focuses
on
the
study
of
an
Ising
nanowire
array
composed
core/shell-structured
single
nanowires
placed
at
edges
a
square
lattice.
phase
transition
temperature,
which
occurs
in
magnetic
properties,
is
obtained
using
effective
field
theory
for
two
interacting
individual
nanowires.
To
understand
how
interaction
affects
magnetic,
we
defined
exchange
(J
R
)
between
This
assigned
both
positive
and
negative
values
to
reveal
ferromagnetic
antiferromagnetic
characteristics
system.
Our
results
revealed
that
significantly
influences
properties
Language: Английский