ACS Applied Nano Materials,
Journal Year:
2024,
Volume and Issue:
7(20), P. 24141 - 24147
Published: Oct. 16, 2024
Solar-blind
ultraviolet
(UV)
photodetectors
play
a
critical
role
in
communication
and
monitoring,
effectively
reducing
false
alarm
rates
improving
the
accuracy
of
detection
systems
across
various
settings,
which
has
garnered
significant
attention.
Due
to
its
exceptional
solar-blind
photon
absorption
coefficient,
extremely
stable
structure,
ultrawide
bandgap
(4.5–4.9
eV),
Ga2O3
recently
been
identified
as
desirable
material
for
UV
photodetectors.
Heterojunctions
can
separate
photogenerated
electron–hole
pairs
their
edges
be
controlled
by
selecting
semiconductors
with
appropriate
bandgaps,
making
them
an
important
technology
light
detection.
In
this
work,
self-powered
photodetector
fabricated
using
mechanically
separated
β-Ga2O3/Lu2O3
core–shell
microwire
heterostructure.
Our
device
demonstrates
excellent
discriminability
photodetection,
exhibits
responsivity
38.8
mA/W,
detectivity
1.22
×
1012
Jones,
switching
ratio
1.43
103,
decay
rate
under
irradiation
62
ms,
benefiting
from
both
photovoltaic
photoconductive
effects.
high
dielectric
constant
Lu2O3
thin
films
at
nanoscale,
enables
more
effective
modulation
internal
electric
fields
within
heterojunction
structures,
thereby
enhancing
response
speed
sensitivity
The
application
achieved
promising
results,
provides
viable
strategy
Ga2O3-based
high-performance
Applied Physics Letters,
Journal Year:
2024,
Volume and Issue:
124(25)
Published: June 17, 2024
Polarization-sensitive
ultraviolet
(UV)
photodetectors
have
attracted
significant
interest
due
to
the
broad
applications
in
UV
polarized
imaging.
However,
conventional
realize
polarization-sensitive
properties
require
integrated
filters
and
polarizers,
which
increase
system
size
cost.
In
this
work,
self-powered
(PDs)
with
high
efficiency
ultrafast
response
speed
based
on
MoS2/a-GaN
heterojunction
been
proposed
applied
Benefiting
from
type-I
band
alignment
formed
by
MoS2/a-GaN,
reduction
of
interfacial
trapping
effect,
PDs
exhibit
remarkable
photovoltaic
polarization
sensitivity
under
light
at
zero
bias
voltage,
including
a
responsivity
15
mA/W,
specific
detectivity
4.7
×
1013
Jones,
an
4/8
ms,
ratio
1.5.
Furthermore,
as-fabricated
demonstrate
This
work
paves
approach
for
development
high-performance
offers
feasible
way
imaging
anisotropic
materials.
Advanced Optical Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 12, 2025
Abstract
Monitoring
the
vacuum
ultraviolet
(VUV)
radiation
from
Sun
by
spaceborne
photodetectors
is
an
indispensable
and
crucial
approach
in
solar
physics
research
atmospheric
photochemistry
investigations.
Diamond‐based
are
emerging
as
ideal
candidates
to
replace
traditional
silicon‐based
detectors
for
high‐selectivity
hardness.
Here,
a
vertical
Schottky
photodiode
based
on
p‐type
high‐quality
single‐crystal
diamond
presented.
By
modulating
surface
band
structure
alignment,
ultra‐short
response
time
of
only
15
ns,
photo‐to‐dark
current
ratio
greater
than
10
5
under
reverse
bias
achieved.
It
first
study
spectral
range
260
nm
low
120
conditions,
exhibiting
selective
responsivity
excellent
imaging
capability
VUV
range.
This
device
holds
promising
prospects
coupling
with
optomechanical
systems
enable
multidimensional
detection
radiation,
including
spectrum.
Advanced Science,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 4, 2025
Abstract
Unipolar
barrier
architecture
is
designed
to
enhance
the
photodetector's
sensitivity
by
inducing
highly
asymmetrical
barriers,
a
higher
for
blocking
majority
carriers
depressing
dark
current,
and
low
minority
carrier
without
impeding
photocurrent
flow
through
channel.
Depressed
current
block
desired
uncooled
Long‐wave
infrared
(LWIR)
photodetection,
which
can
of
photodetector.
Here,
an
excellent
unipolar
photodetector
based
on
multi‐layer
(ML)
graphene
(G)
developed,
WSe
2
,
PtSe
(G‐WSe
‐PtSe
)
van
der
Waals
(vdW)
heterostructure,
in
extremely
1.61×10
−13
A,
record
high
light
on/off
≈10
9
are
demonstrated
at
0
V.
Notably,
device
exhibits
ultrafast
response
speed
with
rise
time
τ
r
=
699
ns
decay
d
452
high‐power
conversion
efficiency
(
η
4.87%.
The
heterostructure
demonstrates
broadband
photoresponse
from
365
nm
LWIR
10.6
µm
room
temperature.
G‐WSe
nBn
photoresponsivity
R
1.8
AW
−1
laser
1
V
bias
ambient
air.
This
offers
alternative
way
sensitive
free
space
communication.
Analytical Chemistry,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 28, 2025
The
cantilever-enhanced
fiber-optic
photoacoustic
(PA)
sensor
(FOPAS)
has
the
advantages
of
intrinsic
safety,
small
size,
and
high
sensitivity.
However,
resonance
frequency
FOPAS
is
easily
affected
by
temperature,
which
leads
to
gas
concentration
measurement
errors.
Herein,
with
tracking
presented
improve
stability
detection.
A
gold-plated
silicon
wafer
reflects
excitation
light
double-enhance
second
harmonic
(2f)
PA
signal
resulting
from
absorption.
excited
incident
on
cell
wall,
solid
absorption
generates
first
(1f)
signal.
Both
1f
2f
signals
were
detected
a
cantilever
spectrophone.
obtained
through
scanning
used
for
real-time
cantilever.
Moreover,
ambient
temperature
can
also
be
tracked
frequency.
experiment
showed
that
minimum
detection
limit
C2H2
reached
27
ppb.
resonant
track
fast
scan
in
just
5
s.
standard
deviation
multiple
results
1.9
Hz.
When
increases
30
70
°C,
error
reduced
28
4%
compensation.
