ACS Applied Nano Materials,
Journal Year:
2024,
Volume and Issue:
7(20), P. 24141 - 24147
Published: Oct. 16, 2024
Solar-blind
ultraviolet
(UV)
photodetectors
play
a
critical
role
in
communication
and
monitoring,
effectively
reducing
false
alarm
rates
improving
the
accuracy
of
detection
systems
across
various
settings,
which
has
garnered
significant
attention.
Due
to
its
exceptional
solar-blind
photon
absorption
coefficient,
extremely
stable
structure,
ultrawide
bandgap
(4.5–4.9
eV),
Ga2O3
recently
been
identified
as
desirable
material
for
UV
photodetectors.
Heterojunctions
can
separate
photogenerated
electron–hole
pairs
their
edges
be
controlled
by
selecting
semiconductors
with
appropriate
bandgaps,
making
them
an
important
technology
light
detection.
In
this
work,
self-powered
photodetector
fabricated
using
mechanically
separated
β-Ga2O3/Lu2O3
core–shell
microwire
heterostructure.
Our
device
demonstrates
excellent
discriminability
photodetection,
exhibits
responsivity
38.8
mA/W,
detectivity
1.22
×
1012
Jones,
switching
ratio
1.43
103,
decay
rate
under
irradiation
62
ms,
benefiting
from
both
photovoltaic
photoconductive
effects.
high
dielectric
constant
Lu2O3
thin
films
at
nanoscale,
enables
more
effective
modulation
internal
electric
fields
within
heterojunction
structures,
thereby
enhancing
response
speed
sensitivity
The
application
achieved
promising
results,
provides
viable
strategy
Ga2O3-based
high-performance
Opto-Electronic Advances,
Journal Year:
2024,
Volume and Issue:
7(6), P. 240070 - 240070
Published: Jan. 1, 2024
Recently,
an
extreme
narrowband
spectral
response
of
only
8
nm
in
electronic-grade
diamond-based
photodetectors
has
been
observed
by
Zheng
Wei
and
his
colleagues
from
Sun
Yat-sen
University
for
the
first
time.
A
charge
collection
narrowing
mechanism
assisted
free
exciton
radiative
recombination
is
proposed,
which
well
reveals
characteristic
diamond.
ACS Applied Nano Materials,
Journal Year:
2024,
Volume and Issue:
7(20), P. 24141 - 24147
Published: Oct. 16, 2024
Solar-blind
ultraviolet
(UV)
photodetectors
play
a
critical
role
in
communication
and
monitoring,
effectively
reducing
false
alarm
rates
improving
the
accuracy
of
detection
systems
across
various
settings,
which
has
garnered
significant
attention.
Due
to
its
exceptional
solar-blind
photon
absorption
coefficient,
extremely
stable
structure,
ultrawide
bandgap
(4.5–4.9
eV),
Ga2O3
recently
been
identified
as
desirable
material
for
UV
photodetectors.
Heterojunctions
can
separate
photogenerated
electron–hole
pairs
their
edges
be
controlled
by
selecting
semiconductors
with
appropriate
bandgaps,
making
them
an
important
technology
light
detection.
In
this
work,
self-powered
photodetector
fabricated
using
mechanically
separated
β-Ga2O3/Lu2O3
core–shell
microwire
heterostructure.
Our
device
demonstrates
excellent
discriminability
photodetection,
exhibits
responsivity
38.8
mA/W,
detectivity
1.22
×
1012
Jones,
switching
ratio
1.43
103,
decay
rate
under
irradiation
62
ms,
benefiting
from
both
photovoltaic
photoconductive
effects.
high
dielectric
constant
Lu2O3
thin
films
at
nanoscale,
enables
more
effective
modulation
internal
electric
fields
within
heterojunction
structures,
thereby
enhancing
response
speed
sensitivity
The
application
achieved
promising
results,
provides
viable
strategy
Ga2O3-based
high-performance
