Ultra‐Large Compressive Plasticity of E‐Ga2O3 Thin Films at the Submicron Scale DOI
Junfeng Cui, Qilong Yuan, Wei Wang

et al.

Small Methods, Journal Year: 2023, Volume and Issue: 8(8)

Published: Dec. 6, 2023

Gallium oxide (Ga

Language: Английский

Electroconductive and photoelectric properties of Pt/(100) β-Ga2O3 Schottky barrier diode based on Czochralski grown crystal DOI Creative Commons
А. V. Аlmaev, В. И. Николаев, Nikita N. Yakovlev

et al.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal Year: 2024, Volume and Issue: 42(4)

Published: May 15, 2024

Pt/(100) β-Ga2O3 Schottky barrier diodes were fabricated using a plate cleaved from the crystal grown by Czochralski method. Their electroconductive and photoelectric characteristics studied. The following values obtained: height (1.69/1.62/1.74 eV), ideality coefficient (1.09/1.14), saturation current density (9.91 × 10–15 A/cm2), diode series resistance (7.98 kΩ), net donor concentration [(1.8–2.4) 1018 cm–3]. demonstrate high rectification ratio of 1010 at an applied voltage ± 1 V relatively low experimental value leakage ∼10–11 A/cm2. These structures are solar-blind also capable operating in self-powered mode. highly sensitive to short-wave ultraviolet radiation with wavelength λ ≤ 265 nm. maximum responsivity (20.4 A/W), external quantum efficiency (1.2 104%), detectivity (9.6 1015 Hz0.5 cm W–1) registered under exposure irradiation = 210 nm −1 V. operation mode 12.3 A/W 7.2 103%, respectively. showed rise decay times for photodiode based on Ga2O3: 14 30 ms,

Language: Английский

Citations

11
Recent developments in SnO2 nanostructures inspired hydrogen gas sensors DOI
Durvesh Gautam, Yogendra K. Gautam, Kavita Sharma

et al.

International Journal of Hydrogen Energy, Journal Year: 2024, Volume and Issue: 81, P. 313 - 345

Published: July 24, 2024

Language: Английский

Citations

10
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD DOI Creative Commons
D. Gogova, Dat Q. Tran, V. Stanishev

et al.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal Year: 2024, Volume and Issue: 42(2)

Published: Feb. 27, 2024

A new growth approach, based on the hot-wall metalorganic chemical vapor deposition concept, is developed for high-quality homoepitaxial of Si-doped single-crystalline β-Ga2O3 layers (010)-oriented native substrates. Substrate annealing in argon atmosphere 1 min at temperatures below 600 °C proposed formation epi-ready surfaces as a cost-effective alternative to traditionally employed process oxygen-containing with time duration h about 1000 °C. It shown that on-axis rocking curve widths exhibit anisotropic dependence azimuth angle minima in-plane direction parallel [001] and maximum [100] both substrate layer. The are demonstrated have excellent structural properties β-Ga2O3(020) full-widths half-maximum low 11 arc sec, which lower than corresponding one substrates (19 sec), even highly (low 1019 cm−3 range) layers. Furthermore, anisotropy layer substantially reduced respect substrate. Very smooth surface morphology epilayers root mean square roughness value 0.6 nm over 5 × μm2 area achieved along high electron mobility 69 cm2 V−1 s−1 free carrier concentration n=1.9×1019 cm−3. These values compare well state-of-the-art parameters reported literature β-Ga2O3(010) respective Si doping levels. Thermal conductivity 17.4 Wm−1K−1 determined [010] 300 K, approaches bulk crystal (20.6 Wm−1K−1). This result explained by weak boundary effect dislocation density

Language: Английский

Citations

8
High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3 DOI
А. V. Аlmaev, A. V. Tsymbalov, Bogdan O. Kushnarev

et al.

Journal of Semiconductors, Journal Year: 2024, Volume and Issue: 45(4), P. 042502 - 042502

Published: April 1, 2024

Abstract High-speed solar-blind short wavelength ultraviolet radiation detectors based on κ ( ε )-Ga 2 O 3 layers with Pt contacts were demonstrated and their properties studied in detail. The deposited by the halide vapor phase epitaxy patterned GaN templates sapphire substrates. spectral dependencies of photoelectric structures analyzed interval 200–370 nm. maximum photo to dark current ratio, responsivity, detectivity external quantum efficiency determined as: 180.86 arb. un., 3.57 A/W, 1.78 × 10 12 Hz 0.5 ∙cm∙W −1 2193.6%, respectively, at a 200 nm an applied voltage 1 V. enhancement photoresponse was caused decrease Schottky barrier Pt/ )−Ga interface under exposure. could functionalize self-powered mode due built-in electric field interface. responsivity 254 zero 0.9 mA/W 0.46%, respectively. rise decay times did not exceed 100 ms.

Language: Английский

Citations

6
Methane sensors based on ZnGa2O4 ceramics with addition of Er for combustion monitoring systems DOI Creative Commons
А. V. Аlmaev, Zhakyp T. Karipbayev,

Ernar B. Zhurkin

et al.

Optical Materials X, Journal Year: 2025, Volume and Issue: unknown, P. 100409 - 100409

Published: March 1, 2025

Language: Английский

Citations

0
Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE DOI
P. N. Butenko, А. И. Печников,

М. Е. Бойко

et al.

Materialia, Journal Year: 2025, Volume and Issue: unknown, P. 102415 - 102415

Published: April 1, 2025

Language: Английский

Citations

0
Photoanodic properties of In/β-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth method DOI
Peverga R. Jubu, Eli Danladi, Habibat Faith Chahul

et al.

Optical Materials, Journal Year: 2023, Volume and Issue: 145, P. 114424 - 114424

Published: Oct. 9, 2023

Language: Английский

Citations

6
β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer DOI Creative Commons
Nikita N. Yakovlev, А. V. Аlmaev, Bogdan O. Kushnarev

et al.

Crystals, Journal Year: 2024, Volume and Issue: 14(2), P. 123 - 123

Published: Jan. 26, 2024

Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film a single-crystalline (2¯01) unintentionally doped (UID) with Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga2O3/UID structures wet-etched, and indium tin oxide (ITO) intermediate semiconductor layer (ISL) was deposited opposite surface of UID β-Ga2O3. The IBS-deposited Ga2O3 polycrystalline semi-insulating. Low leakage currents, rectification ratios 3.9 × 108 arb. un. 3.4 106 un., ideality factors 1.43 1.24, heights 1.80 eV 1.67 as well breakdown voltages 134 V 180 achieved for without ITO-ISL, respectively. area IBS-Ga2O3 acted thin dielectric and, together preliminary wet etching, provided low currents relatively high heights. Diodes Ni/IBS-deposited demonstrated first time.

Language: Английский

Citations

2
Indium-nickel oxide nanocomposite for room temperature H2 gas detection and its sensing mechanism DOI
Yuxiao Jiang, Kelin Hu, Jing Zhang

et al.

Ceramics International, Journal Year: 2024, Volume and Issue: 50(19), P. 36428 - 36439

Published: July 3, 2024

Language: Английский

Citations

1
Ultra‐Large Compressive Plasticity of E‐Ga2O3 Thin Films at the Submicron Scale DOI
Junfeng Cui, Qilong Yuan, Wei Wang

et al.

Small Methods, Journal Year: 2023, Volume and Issue: 8(8)

Published: Dec. 6, 2023

Gallium oxide (Ga

Language: Английский

Citations

2