A gallium oxide MESFET transistor with potential barrier layers for high-power and high-frequency applications DOI

Reyhaneh Shiralizadeh Nemati,

Ali A. Orouji

Physica Scripta, Journal Year: 2024, Volume and Issue: 100(1), P. 015909 - 015909

Published: Nov. 14, 2024

Abstract In this article, a novel gallium oxide metal semiconductor field effect transistor (MESFET) is presented. This device designed for high-power and high-frequency usage features embedded potential barrier layers on each side of the gate within channel. The (Ga 2 O 3 ) highly valued in technologies because its large band gap (4.9–4.8 eV) high breakdown (6–8 MV cm −1 ). These properties make it suitable operations. We call proposed structure; Gallium Oxide MESFET (PBL-GO-MESFET). key idea PBL-GO-MESFET embedding PB to control electric distribution. Because layers, an increased voltage observed device, which contrast conventional GO-MESFET (C-GO-MESFET) devices. simulation findings indicate that surpasses C-GO-MESFET terms radio frequency (RF) traits.

Language: Английский

The Effect of the Substrate Doping on the Properties of Structure Ga2O3–ZnGeP2 DOI Open Access
Sergey Podzyvalov,

V. M. Kalygina,

Nikolay Yudin

et al.

physica status solidi (a), Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 7, 2025

The influence of doping ZnGeP 2 (ZGP) crystals on the electrical and photoelectric characteristics Ga O 3 /ZGP structures is studied. Samples are obtained by radio frequency magnetron sputtering a gallium oxide film onto polished ZGP plates, undoped doped with Sn, Se, Pb, or Zn. It shown that Sn Se have less dark current than in ZGP. exhibit photovoltaic effect under exposure radiation UV range λ = 254 nm long‐wavelength 808. To obtain solar‐blind structures, it necessary to use ZGP:Sn crystals. increase sensitivity samples radiation, advisable dope plates Pb behavior studied different impurities not related parameters but most likely determined change properties heterointerface as result doping.

Language: Английский

Citations

0
A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges DOI Creative Commons

Alfred Moore,

Saqib Rafique,

Ciaran P. Llewelyn

et al.

Advanced Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 10, 2025

Abstract In recent years, gallium oxide (Ga 2 O 3 ) has drawn considerable research interest as an ultrawide‐bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga heterojunctions have emerged a approach address key limitations of standalone material—most notably, lack p‐type doping capability. One application areas for is ultraviolet (UV) which gained significant attention yet remains relatively nascent field with vast potential further exploration optimization. This review provides detailed overview current state‐of‐the‐art technology, highlighting advancements, challenges, emerging strategies aimed at overcoming these challenges. Specifically, it examines deep‐UV analysing compatible electrode materials assessing various substrates suitable growth enhance device performance. comprehensive designed serve essential resource researchers engineers working ‐based heterojunctions, especially UV photodetection. Written needs new entrants mind, aims build robust foundational understanding supporting ongoing innovation expansion this field.

Language: Английский

Citations

0
High‐Performance p‐NiO/β‐Ga2O3 Heterostructure Junction Field‐Effect Transistors with Mesa Field Plate Structure DOI Open Access
Suzhen Luan,

Wenping Gu

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: March 6, 2025

Herein, based on the heterostructure junction field‐effect transistor (HJFETs) structure, a gate‐drain mesa field plate (G‐DMT) structure is designed construction of p‐NiO/β‐Ga 2 O 3 HJFET device model and compared with flat (G‐DFPT) structure. The effects different NiO doping concentrations (NA), epitaxial layer (EPI), gate materials electrical properties two structures are systematically analyzed under same parameters. results show that both devices realize enhancement mode, but G‐DMT has higher threshold voltage (Vth) saturation current. When NA 1 × 1018 cm −3 , EPI 9 1016 oxide material HfO peak transconductance reaches 44.11 mS mm, while G‐DFPT 40.32 mm. At time, maximum power factor merit (PFOM) 4.04 GW − PFOM only 1.31 . This study provides new ideas directions for design high‐performance β‐Ga HJFETs.

Language: Английский

Citations

0
An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications DOI
Reshma Ravindran, Ahmed Massoud

Microelectronic Engineering, Journal Year: 2025, Volume and Issue: 299, P. 112348 - 112348

Published: April 11, 2025

Language: Английский

Citations

0
Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers DOI
A.S. Augustine Fletcher,

P. Murugapandiyan,

A. Mohanbabu

et al.

Applied Physics A, Journal Year: 2025, Volume and Issue: 131(5)

Published: April 23, 2025

Language: Английский

Citations

0
Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate DOI Creative Commons
Hadi Ebrahimi‐Darkhaneh, Leunam Fernández‐Izquierdo, M. Josefina Arellano-Jiménez

et al.

Advanced Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 28, 2025

Abstract This study investigates the performance of thin film Ga 2 O 3 ‐based fin field‐effect transistors (FinFETs) built on patterned silicon substrates. The is deposited using trimethylgallium (TMGa) ALD processes. Three devices are fabricated: one utilizing as‐deposited materials, another subjected to post‐deposition annealing at 450°C, and a third annealed 900°C. electrical, optical, material properties films transistor evaluated range complementary characterization techniques, whilst effects moderate (450°C) higher temperature (900°C) also investigated. device exhibited an Ion/Ioff ratio 8.8 × 10 6 , Ion density 0.062 µA.µm −2 maximum charge carrier mobility 3.2 cm2.V −1 s threshold voltage (Vth) 7.9 V, sub‐threshold swing (SS) 590 mV.dec breakdown (BVDSS) 40 V. After in N atmosphere, 450°C displayed significant improvements, with 8.3 107, 0.14 8.5 Vth SS 475 remarkable BVDSS exceeding 200 In contrast, 900°C sample decrease performance, 1.2 0.023 dropping 1.4 cm .V 9.2 510 although it maintained above surface morphology materials compositions fabricated further analyzed via combination scanning electron transmission microscopy techniques. obtained results confirmed transition from amorphous phase into polycrystalline morphologies noticeable grain boundaries for samples thermal annealing.

Language: Английский

Citations

0
Single‐Crystal Growth and Characterization of β‐Ga2O3 (1 0 0) for GaP/Ga2O3 Heterostructures by Hydride Vapor Phase Epitaxy DOI

Dhandapani Dhanabalan,

Raja Sakthivel,

S. Moorthy Babu

et al.

physica status solidi (a), Journal Year: 2025, Volume and Issue: unknown

Published: May 14, 2025

Single‐crystal growth of (100) β ‐Ga 2 O 3 and the attempt to grow GaP on it by hydride vapor phase epitaxy (HVPE) is been described. The purity orientation crystal confirmed X‐ray diffraction (XRD). selected area electron pattern confirms monoclinic structure with a C2/m space group . Raman results reveal stretching bending vibrations GaO GaOGa octahedrons, respectively. wafer exhibits ≈80% optical transmission surface roughness ≈5 nm. layers are grown (100)‐oriented substrates HVPE. GaP/ heterostructures characterized using XRD spectroscopy. Diffraction peak at (111) zinc blende GaP. longitudinal (405 cm −1 ) transverse (368 phonon modes in spectra confirm crystalline Further optimization expected enhance quality layer Ga wafer. potential GaP/(100) highlighted.

Language: Английский

Citations

0
Defect Structure and Luminescence of κ‐Ga2O3 Micro‐Monocrystals DOI Open Access
О. Ф. Вывенко, Sevastian Shapenkov, Е. В. Убыйвовк

et al.

physica status solidi (b), Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 24, 2024

Wide bandgap orthorhombic polymorph of gallium oxide (κ‐Ga 2 O 3 ) possessing a high spontaneous polarization grown on wurtzite‐type semiconducting substrates is considered to create mobility electron channel suitable for applications. Such κ‐Ga layers are composed hexagon microprisms whose properties affect the lateral electric conductance. In this work, structure and recombination extended defects in individual “suspended” thin investigated with transmission scanning microscopy techniques (STEM, HR‐TEM) including cathodoluminescence (CL‐SEM). It established that microprism six equisized domains bounded by twin domain boundaries (TDBs) along directions <110>. Twin contains parallel array antiphase (APB) density stretched [010] direction. APBs possess steps or interruption can form double oppositely shifted spatially separated (APB dipoles). TDBs majority their length incoherent serve as border APB terminations. Panchromatic CL maps reveal either enhanced reduced intensity without noticeable spectral changes. enhancement proposed be due electron–hole generation caused excess scattering primary beam films while, fact, exhibits nonradiative activity.

Language: Английский

Citations

0
A gallium oxide MESFET transistor with potential barrier layers for high-power and high-frequency applications DOI

Reyhaneh Shiralizadeh Nemati,

Ali A. Orouji

Physica Scripta, Journal Year: 2024, Volume and Issue: 100(1), P. 015909 - 015909

Published: Nov. 14, 2024

Abstract In this article, a novel gallium oxide metal semiconductor field effect transistor (MESFET) is presented. This device designed for high-power and high-frequency usage features embedded potential barrier layers on each side of the gate within channel. The (Ga 2 O 3 ) highly valued in technologies because its large band gap (4.9–4.8 eV) high breakdown (6–8 MV cm −1 ). These properties make it suitable operations. We call proposed structure; Gallium Oxide MESFET (PBL-GO-MESFET). key idea PBL-GO-MESFET embedding PB to control electric distribution. Because layers, an increased voltage observed device, which contrast conventional GO-MESFET (C-GO-MESFET) devices. simulation findings indicate that surpasses C-GO-MESFET terms radio frequency (RF) traits.

Language: Английский

Citations

0