Investigation of the photocatalytic potential of C/N-co-doped ZnO nanorods produced via a mechano-thermal process
Parmeshwar Lal Meena,
No information about this author
Ajay Kumar Surela,
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Lata Kumari Chhachhia
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et al.
Nanoscale Advances,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 1, 2025
Doping
in
pure
materials
causes
vital
alterations
opto-electrical
and
physicochemical
characteristics,
which
enable
the
produced
doped
material
to
be
highly
efficient
effective.
Language: Английский
Exploring green synthesis and characterization of ZIF-8 and recent developments in anti-infective applications
Inorganic Chemistry Communications,
Journal Year:
2024,
Volume and Issue:
unknown, P. 113333 - 113333
Published: Oct. 1, 2024
Language: Английский
ENHANCED PHOTOCATALYTIC DEGRADATION OF ANTIVIRAL DRUGS LOPINAVIR AND RITONAVIR BY Ni DOPED ZnO/SiO2 NANOCOMPOSITES
Journal of environmental chemical engineering,
Journal Year:
2024,
Volume and Issue:
unknown, P. 114525 - 114525
Published: Oct. 1, 2024
Language: Английский
Rietveld refined structural, optical and temperature dependent impedance spectroscopy of NiO-ZnO heterostructure composite: Synthesized through solid state method for high-frequency devices
Muhammad Rafi,
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Ujala Anwar,
No information about this author
M. Hisham Alnasir
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et al.
Ceramics International,
Journal Year:
2024,
Volume and Issue:
50(20), P. 38600 - 38609
Published: July 17, 2024
Language: Английский
Peculiarities of Electric and Dielectric Behavior of Ni- or Fe-Doped ZnO Thin Films Deposited by Atomic Layer Deposition
Materials,
Journal Year:
2024,
Volume and Issue:
17(14), P. 3546 - 3546
Published: July 18, 2024
The
physical
properties
of
ZnO
can
be
tuned
efficiently
and
controllably
by
doping
with
the
proper
element.
Doping
thin
films
3D
transition
metals
that
have
unpaired
electron
spins
(e.g.,
Fe,
Co,
Ni,
etc.)
is
particular
interest
as
it
may
enable
magnetic
phenomena
in
layers.
Atomic
layer
deposition
(ALD)
most
advanced
technique,
which
ensures
high
accuracy
throughout
process,
producing
uniform
controllable
composition
thickness,
forming
smooth
sharp
interfaces.
In
this
work,
ALD
was
used
to
prepare
Ni-
or
Fe-doped
films.
dielectric
electrical
were
studied
measuring
standard
current–voltage
(I–V),
capacitance–voltage
(C–V),
capacitance–frequency
(C–f)
characteristics
at
different
temperatures.
Spectral
ellipsometry
assess
optical
bandgap
We
established
dopant
strongly
affects
electric
behavior
results
provide
evidence
polarization
mechanisms
dominate
response
Language: Английский