Hybrid Photonic Integrated Circuits for Wireless Transceivers DOI Creative Commons

Tianwen Qian,

Benjamin Schuler, Y Durvasa Gupta

et al.

Photonics, Journal Year: 2025, Volume and Issue: 12(4), P. 371 - 371

Published: April 12, 2025

Recent advancements in hybrid photonic integrated circuits (PICs) for wireless communications are reviewed, with a focus on innovations developed at Fraunhofer HHI. This work leverages integration technology, which combines indium phosphide (InP) active elements, silicon nitride (Si3N4) low-loss waveguides, and high-efficient thermal-optical tunable polymers micro-optical functions to achieve fully transceivers. Key contributions include (1) On-chip optical injection locking generating phase-locked beat notes 45 GHz, enabled by cascaded InP phase modulators InP/polymer lasers 3.8 GHz range. (2) Waveguide-integrated THz emitters receivers, featuring photoconductive antennas (PCAs) 22× improved photoresponse compared top-illuminated designs, alongside scalable 1 × 4 PIN-PD PCA arrays enhanced power directivity. (3) Beam steering 300 using polymer-based phased array (OPA) an antenna array, achieving continuous across 20° 10.6 dB increase output power. (4) Demonstration of transceiver PICs combining InP, Si3N4, polymer material platforms, validated through key component characterization, on-chip frequency comb generation, coherent note generation GHz. These result compact form factors, reduced consumption, scalability, positioning as enabling technology future high-speed networks.

Language: Английский

Hybrid Photonic Integrated Circuits for Wireless Transceivers DOI Creative Commons

Tianwen Qian,

Benjamin Schuler, Y Durvasa Gupta

et al.

Photonics, Journal Year: 2025, Volume and Issue: 12(4), P. 371 - 371

Published: April 12, 2025

Recent advancements in hybrid photonic integrated circuits (PICs) for wireless communications are reviewed, with a focus on innovations developed at Fraunhofer HHI. This work leverages integration technology, which combines indium phosphide (InP) active elements, silicon nitride (Si3N4) low-loss waveguides, and high-efficient thermal-optical tunable polymers micro-optical functions to achieve fully transceivers. Key contributions include (1) On-chip optical injection locking generating phase-locked beat notes 45 GHz, enabled by cascaded InP phase modulators InP/polymer lasers 3.8 GHz range. (2) Waveguide-integrated THz emitters receivers, featuring photoconductive antennas (PCAs) 22× improved photoresponse compared top-illuminated designs, alongside scalable 1 × 4 PIN-PD PCA arrays enhanced power directivity. (3) Beam steering 300 using polymer-based phased array (OPA) an antenna array, achieving continuous across 20° 10.6 dB increase output power. (4) Demonstration of transceiver PICs combining InP, Si3N4, polymer material platforms, validated through key component characterization, on-chip frequency comb generation, coherent note generation GHz. These result compact form factors, reduced consumption, scalability, positioning as enabling technology future high-speed networks.

Language: Английский

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