Vertical Heterojunction Photodetector of In2Se3/PtS2 with High Polarization Sensitivity and Tunable Electronic Characteristics DOI
Yue Wang, Zhen Cui, Chunli Zhang

et al.

Materials Today Communications, Journal Year: 2024, Volume and Issue: 40, P. 109857 - 109857

Published: July 17, 2024

Language: Английский

GaN/Sc2CF2 heterostructure photodetector with exceptional polarization sensitivity DOI
Zhen Cui, Guoqing Zhang, Shuang Zhang

et al.

Micro and Nanostructures, Journal Year: 2024, Volume and Issue: 193, P. 207922 - 207922

Published: June 21, 2024

Language: Английский

Citations

33
High carrier mobility and polarization sensitivity of AlN/Hf2CO2 heterojunction photodetector DOI
Zhen Cui, Xin Gao, Shuang Zhang

et al.

Chinese Journal of Physics, Journal Year: 2024, Volume and Issue: 91, P. 421 - 431

Published: Aug. 1, 2024

Language: Английский

Citations

30
The excellent electrocatalytic HER activity and photogalvanic effect of WS2/Ga2O3 based on Density Functional Theory DOI
Zhen Cui, Hanxiao Wang, Yang Shen

et al.

International Journal of Hydrogen Energy, Journal Year: 2024, Volume and Issue: 88, P. 898 - 905

Published: Sept. 24, 2024

Language: Английский

Citations

29
A comprehensive review on advancements in sensors for air pollution applications DOI

Thara Seesaard,

Kamonrat Kamjornkittikoon,

Chatchawal Wongchoosuk

et al.

The Science of The Total Environment, Journal Year: 2024, Volume and Issue: 951, P. 175696 - 175696

Published: Aug. 26, 2024

Language: Английский

Citations

23
Perovskite/WSSe heterojunction photodetector with ultrahigh sensitivity and accuracy DOI
Zhen Feng Cui, Hanxiao Wang, Yi Luo

et al.

Applied Surface Science, Journal Year: 2024, Volume and Issue: unknown, P. 161853 - 161853

Published: Nov. 1, 2024

Language: Английский

Citations

18
Electrical Properties and Current-Illumination Characteristics of the SiC/GaN Lateral Heterostructure DOI
Enling Li, Ke Qin, Zhen Cui

et al.

The Journal of Physical Chemistry C, Journal Year: 2024, Volume and Issue: 128(28), P. 11827 - 11834

Published: June 26, 2024

Language: Английский

Citations

7
Bifunctional g-GaN/Si9C15 S-scheme heterojunction for efficient photocatalytic hydrogen evolution and photodetector DOI
Enling Li, Yanbo Dong, Zhen Cui

et al.

Applied Surface Science, Journal Year: 2024, Volume and Issue: 658, P. 159851 - 159851

Published: March 7, 2024

Language: Английский

Citations

6
Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties DOI
Chu Viet Ha, R. Ponce‐Pérez, J. Guerrero-Sánchez

et al.

Advanced Theory and Simulations, Journal Year: 2024, Volume and Issue: 7(6)

Published: May 5, 2024

Abstract In this work, point defects are proposed to modify the electronic and magnetic properties of SiP monolayer. Pristine monolayer is a non‐magnetic semiconductor 2D material with energy gap 1.52(2.21) eV as predicted by PBE(HSE06) functional. Single Si vacancy (), Si+P divacancy substituting one P atom () magnetize significantly Herein, total moments between 1.00 2.00 obtained . contrast, no magnetism induced single exchanging pair Si‐P positions (). Moreover, significant magnetization also achieved doping Li Cu atoms ( ), well ). Total 0.84 1.42 obtained. Interestingly, half‐metallicity observed in systems. When atom, F, Cl, Br impurities reduce bandgap, preserving its nature. moment 1.26 I atom. Results presented herein may introduce defected doped systems prospective candidates for spintronic optoelectronic applications.

Language: Английский

Citations

5
Density Functional Theory Study of AlN Nanosheets with Biphenylene Structure: Stability, Electronic, Thermoelectric, Mechanical, and Optical Properties DOI
Ebrahim Nemati‐Kande,

Sorour Faramarzi,

Shabnam Yavari

et al.

ACS Applied Nano Materials, Journal Year: 2024, Volume and Issue: 7(11), P. 12431 - 12444

Published: May 30, 2024

Biphenylene network (BPN) structures have garnered attention owing to the presence of 4-, 6-, 8-, and 12-membered rings in their unit cells, leading unique properties. Additionally, versatility aluminum (Al) combined with group V elements, particularly nitrogen (N) atoms, presents promising applications across various domains. These factors motivated us investigate BPN-AlN containing using density functional theory methods. lead large holes, making this structure useful for ion storage energy materials. This study contains stability (thermal, mechanical, dynamical), structural, electronic, thermoelectric, optical properties nanosheet. The dynamic proposed nanosheet was confirmed by absence negative modes phonon dispersion spectrum. Furthermore, minimal fluctuations ab initio molecular dynamics simulation, even at a high temperature 1500 K, prove thermal calculation leads nanosheet's melting temperature. has exhibited semiconductor behavior indirect band gap 4.025 eV. By investigating electron localization function, shows polar ionic bonds, which introduces as good candidate absorbing numerous substances like sensors. Seebeck coefficient exhibits highest peak values 359 μV/K (n-type) 305 (p-type) 300 K. ultralow lattice conductivity, approximately 0.46 W/mK confirms superior thermoelectric nanosheets. reveals significant absorption reflection ultraviolet light, highlighting potential protection. specific electronic imply that BPB-AlN may be used generation nano-optoelectronic technology design.

Language: Английский

Citations

5
High-efficiency photocatalyst and high-response ultraviolet photodetector based on the Ga2SSe@GaN heterojunctions DOI
Ke Qin, Enling Li, Yang Shen

et al.

Surfaces and Interfaces, Journal Year: 2024, Volume and Issue: 52, P. 104996 - 104996

Published: Aug. 23, 2024

Language: Английский

Citations

5