Thin Films of Tungsten Disulfide Grown by Sulfurization of Sputtered Metal for Ultra-Low Detection of Nitrogen Dioxide Gas DOI Creative Commons
А. Д. Федоренко, S. A. Lavrukhina, Victor A. Alekseev

et al.

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(8), P. 594 - 594

Published: April 12, 2025

Tungsten disulfide (WS2) is attractive for the development of chemiresistive sensors due to its favorable band gap, as well mechanical strength and chemical stability. In this work, we elaborate a procedure synthesis thin films consisting vertically and/or horizontally oriented WS2 nanoparticles by sulfurizing nanometer-thick tungsten layers deposited on oxidized silicon substrates using magnetron sputtering. According X-ray photoelectron spectroscopy Raman scattering data, grown in an H2-containing atmosphere at 1000 °C are almost free oxide. The film’s thickness controlled varying sputtering duration from 10 90 s. highest response nitrogen dioxide (NO2) room temperature was demonstrated film obtained layer sputtered 30 increased sensitivity attributed high surface-to-volume ratio provided horizontal vertical orientation small nanoparticles. Based density functional calculations, conclude that in-plane size provides many high-energy sites NO2 adsorption, which leads greater charge transfer sensor. detection limit calculated best sensor (WS2-30s) 15 ppb 8 125 °C. can operate humid environment significantly less sensitive NH3 mixture H2, CO, CO2 gases.

Language: Английский

Thin Films of Tungsten Disulfide Grown by Sulfurization of Sputtered Metal for Ultra-Low Detection of Nitrogen Dioxide Gas DOI Creative Commons
А. Д. Федоренко, S. A. Lavrukhina, Victor A. Alekseev

et al.

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(8), P. 594 - 594

Published: April 12, 2025

Tungsten disulfide (WS2) is attractive for the development of chemiresistive sensors due to its favorable band gap, as well mechanical strength and chemical stability. In this work, we elaborate a procedure synthesis thin films consisting vertically and/or horizontally oriented WS2 nanoparticles by sulfurizing nanometer-thick tungsten layers deposited on oxidized silicon substrates using magnetron sputtering. According X-ray photoelectron spectroscopy Raman scattering data, grown in an H2-containing atmosphere at 1000 °C are almost free oxide. The film’s thickness controlled varying sputtering duration from 10 90 s. highest response nitrogen dioxide (NO2) room temperature was demonstrated film obtained layer sputtered 30 increased sensitivity attributed high surface-to-volume ratio provided horizontal vertical orientation small nanoparticles. Based density functional calculations, conclude that in-plane size provides many high-energy sites NO2 adsorption, which leads greater charge transfer sensor. detection limit calculated best sensor (WS2-30s) 15 ppb 8 125 °C. can operate humid environment significantly less sensitive NH3 mixture H2, CO, CO2 gases.

Language: Английский

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