Ferroelectric field effect transistors based on two-dimensional CuInP2S6 (CIPS) and graphene heterostructures DOI Creative Commons
Maheera Abdul Ghani, Soumya Sarkar, Yang Li

et al.

MRS Energy & Sustainability, Journal Year: 2024, Volume and Issue: 11(2), P. 616 - 623

Published: Aug. 21, 2024

Abstract Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP 2 S 6 (CIPS) has been integrated with graphene and other to realize potentially novel low electronic devices. However, influence CIPS on properties doping across vdW interface not studied in detail. Here, we study field effect transistors (FETs) as top gate. We find leads modulation Fermi level due local doping. also polarization-induced hysteresis CIPS-gated FETs. Electrical transport measurements from 50 to300 K show above 200 K, response decreases. As a result, voltage windows FETs (FeFET) transfer curves decrease K. Our results interfacial remote affects macroscopic polarization performance CIPS-based FeFETs. Graphical abstract Highlights This research studies temperature-dependent ferroelectric/2D channel (FeFETs). Experimental findings showed switching-based -gated Discussion ferroelectrics be scaled atomic layer thicknesses are useful for miniaturised electronics. Understanding is essential their integration into current future technologies.

Language: Английский

2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects DOI
Chloe Leblanc, Seunguk Song, Deep Jariwala

et al.

Current Opinion in Solid State and Materials Science, Journal Year: 2024, Volume and Issue: 32, P. 101178 - 101178

Published: July 30, 2024

Language: Английский

Citations

6
Ferroelectric field effect transistors based on two-dimensional CuInP2S6 (CIPS) and graphene heterostructures DOI Creative Commons
Maheera Abdul Ghani, Soumya Sarkar, Yang Li

et al.

MRS Energy & Sustainability, Journal Year: 2024, Volume and Issue: 11(2), P. 616 - 623

Published: Aug. 21, 2024

Abstract Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP 2 S 6 (CIPS) has been integrated with graphene and other to realize potentially novel low electronic devices. However, influence CIPS on properties doping across vdW interface not studied in detail. Here, we study field effect transistors (FETs) as top gate. We find leads modulation Fermi level due local doping. also polarization-induced hysteresis CIPS-gated FETs. Electrical transport measurements from 50 to300 K show above 200 K, response decreases. As a result, voltage windows FETs (FeFET) transfer curves decrease K. Our results interfacial remote affects macroscopic polarization performance CIPS-based FeFETs. Graphical abstract Highlights This research studies temperature-dependent ferroelectric/2D channel (FeFETs). Experimental findings showed switching-based -gated Discussion ferroelectrics be scaled atomic layer thicknesses are useful for miniaturised electronics. Understanding is essential their integration into current future technologies.

Language: Английский

Citations

1