Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Nature Communications,
Journal Year:
2024,
Volume and Issue:
15(1)
Published: April 3, 2024
Abstract
In
the
realm
of
ferroelectric
memories,
HfO
2
-based
ferroelectrics
stand
out
because
their
exceptional
CMOS
compatibility
and
scalability.
Nevertheless,
switchable
polarization
switching
speed
are
not
on
par
with
those
perovskite
ferroelectrics.
It
is
widely
acknowledged
that
defects
play
a
crucial
role
in
stabilizing
metastable
polar
phase
.
Simultaneously,
also
pin
domain
walls
impede
process,
ultimately
rendering
sluggish
Herein,
we
present
an
effective
strategy
involving
acceptor-donor
co-doping
to
effectively
tackle
this
dilemma.
Remarkably
enhanced
ferroelectricity
fastest
process
ever
reported
among
devices
observed
La
3+
-Ta
5+
co-doped
ultrathin
films.
Moreover,
robust
macro-electrical
characteristics
films
persist
even
at
thickness
as
low
3
nm,
expanding
potential
applications
devices.
Our
systematic
investigations
further
demonstrate
synergistic
effects
uniform
microstructure
smaller
barrier
introduced
by
ensure
shortened
time.
The
offers
avenue
control
defect
state
improve
properties
Language: Английский
Fractional quantum ferroelectricity
Nature Communications,
Journal Year:
2024,
Volume and Issue:
15(1)
Published: Jan. 2, 2024
Abstract
For
an
ordinary
ferroelectric,
the
magnitude
of
spontaneous
electric
polarization
is
at
least
one
order
smaller
than
that
resulting
from
ionic
displacement
lattice
vectors,
and
direction
determined
by
point
group
ferroelectric.
Here,
we
introduce
a
new
class
ferroelectricity
termed
Fractional
Quantum
Ferroelectricity.
Unlike
ferroelectrics,
Ferroelectricity
arises
substantial
atomic
displacements
are
comparable
to
constants.
Applying
theory
analysis,
identify
27
potential
groups
can
realize
Ferroelectricity,
including
both
polar
non-polar
groups.
The
in
found
always
contradict
with
symmetry
“polar”
phase,
which
violates
Neumann’s
principle,
challenging
conventional
symmetry-based
knowledge.
Through
density
functional
calculations,
not
only
explain
puzzling
experimentally
observed
in-plane
monolayer
α-In
2
Se
3
,
but
also
predict
cubic
compound
AgBr.
Our
findings
unveil
realm
ferroelectric
behavior,
expanding
understanding
application
these
materials
beyond
limits
traditional
ferroelectrics.
Language: Английский
Pressure-Driven Polar Orthorhombic to Tetragonal Phase Transition in Hafnia at Room Temperature
Chemistry of Materials,
Journal Year:
2025,
Volume and Issue:
37(5), P. 1820 - 1825
Published: Feb. 17, 2025
Oxides
are
legendary
for
their
complex
energy
landscapes,
sensitivity
to
external
stimuli,
and
property
control
through
chemical
substitution.
Of
these,
the
binary
oxide
HfO2
is
one
of
most
fascinating
because
extraordinary
number
competing
phases
opportunities
stabilize
unique
useful
properties.
In
this
work,
we
combined
synchrotron-based
infrared
absorbance
Raman
scattering
spectroscopies
with
diamond
anvil
cell
techniques
first-principles
calculations
explore
properties
polar
orthorhombic
hafnia
(chemical
formula
HfO2:xY,
where
x
=
12%)
under
pressure.
Compression
drives
system
tetragonal
form
above
22
GPa─quite
different
from
more
conventional
phase
diagram
derived
pressurization
monoclinic
resides
at
elevated
temperatures.
addition
evidence
a
landscape,
unveil
wide
coexistence
region,
order-of-magnitude
differences
in
phonon
lifetimes,
an
A1g
symmetry
negative
mode
Grüneisen
parameter
that
toward
cubic
phase.
Similar
pressure
pathways
may
connect
other
metastable
family
materials.
Language: Английский