Nonlocalized Conductive Paths Construction and In-depth Mechanism Analysis for the Robust Resistive Switching in Halide Perovskites DOI
Yu Yan, Hongwei Ge, Xiaohang Zhang

et al.

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 14, 2025

The conductive paths (CPs) established by defects in halide perovskites (HPs) tend to be disrupted under external influences, leading deterioration of their RRAM performances. Here we propose an effective strategy enhance the CPs HP RRAMs doping Ag+ partially substitute Pb2+ MAPbI3, which facilitates nonlocalized growth Ag and thereby improves stability CPs. optimal doped device demonstrates excellent performances including high ON/OFF ratios (>107), long retention (>105 s), large endurance (>103 cycles), uniform parameters, yield. In-depth mechanism investigation illustrates homogeneous distribution migration a sufficient quantity contribute formation stable, HP. This possesses superiorities not requiring participation active electrode, simple material preparation, broad applicability, provides new perspective for developing high-performance RRAMs.

Language: Английский

Emerging Trends of Carbon‐Based Quantum Dots: Nanoarchitectonics and Applications DOI Creative Commons
Xinwei Guan, Zhixuan Li, Xun Geng

et al.

Small, Journal Year: 2023, Volume and Issue: 19(17)

Published: Jan. 24, 2023

Carbon-based quantum dots (QDs) have emerged as a fascinating class of advanced materials with unique combination optoelectronic, biocompatible, and catalytic characteristics, apt for plethora applications ranging from electronic to photoelectrochemical devices. Recent research works established carbon-based QDs those frontline through improvements in design, processing, device stability. This review broadly presents the recent progress synthesis QDs, including carbon graphene graphitic nitride their heterostructures, well salient applications. The methods are first introduced, followed by an extensive discussion dependence performance on intrinsic properties nanostructures aiming present general strategies designing optimal performance. Furthermore, diverse presented, emphasis relationship between band alignment, charge transfer, improvement. Among discussed this review, much focus is given photo electrocatalytic, energy storage conversion, bioapplications, which pose grand challenge rational designs. Finally, summary existing challenges future directions elaborated.

Language: Английский

Citations

128

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications DOI Creative Commons
Chien‐Yu Huang, Hanchen Li, Ye Wu

et al.

Nano-Micro Letters, Journal Year: 2022, Volume and Issue: 15(1)

Published: Dec. 29, 2022

Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for prominent merits, such as confinement effects, high photoluminescence yield, defect-tolerant structures. Additionally, ligand engineering an all-inorganic composition lead to a robust platform ambient-stable QD devices. This review presents the state-of-the-art research progress on QDs, emphasizing electronic applications. In detail, QDs will be introduced first, followed by discussion synthesis methods growth control. Afterwards, emerging applications electronics, including transistors memories, presented. Finally, this provide outlook potential strategies advancing technologies.

Language: Английский

Citations

105

Perovskite-based transparent pn junction in CuI/SrTiO3 toward enhanced photoelectric response via interfacial homogeneous perovskite LaCoO3 transition layer DOI
Xinyan Lv,

Yang Wei,

Zefeng Cai

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(9)

Published: March 1, 2025

A transparent pn junction comprising CuI/LaCoO3 QDs/SrTiO3 was synthesized using the solgel-hydrothermal-freeze drying-sputtering in situ iodization method. The achieves transmittance of ∼85%, photoelectric enhancement ∼2.2 × 103-fold to intrinsic CuI/SrTiO3, and good stability 5 months. It can be primarily attributed LaCoO3 QDs. In addition appropriate Fermi level high QY, QDs with carrier inducing–injecting–driving ameliorate dynamics for PCE-transparency balance, meanwhile increasing hole by Cu vacancy. Furthermore, CuI, LaCoO3, SrTiO3 maintain structural potential devices.

Language: Английский

Citations

3

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing DOI Creative Commons

Zijian Feng,

Jiyun Kim, Jie Min

et al.

Advanced Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 25, 2025

Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one the top concerns researchers must address. This study presents 1D lead‐free halide perovskite K 2 CuBr 3 , as novel material candidate for resistive switching (RS) devices, which features only earth‐abundant elements, K, Cu, and Br. To knowledge, this first low‐dimensional with exceptionally low production costs minimal environmental impact. Owing unique carrier transport along Cu─Br networks, RS device exhibits excellent bipolar behavior, an On/Off window 10 5 retention time over 1000 s. The devices can also act artificial synapses transmit various forms synaptic plasticities, integration into perceptron neural network deliver high algorithm accuracy 93% image recognition. Overall, underscores promising attributes future development memory storage neuromorphic computing, leveraging its distinct properties economic benefits.

Language: Английский

Citations

2

Low‐Dimensional Metal‐Halide Perovskites as High‐Performance Materials for Memory Applications DOI Creative Commons
Xinwei Guan,

Zhihao Lei,

Xuechao Yu

et al.

Small, Journal Year: 2022, Volume and Issue: 18(38)

Published: Aug. 21, 2022

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, so on. Meanwhile, development of information storage technologies digital communications has fueled demand for novel semiconductor materials. Low-dimensional offered a new force propel developments memory field due physical properties associated with reduced dimensionality. In this review, mechanisms, as well stability performance low-dimensional perovskite memories, involving both molecular-level structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming present effective strategies designing devices based on class high-performance Finally, existing challenges future opportunities presented.

Language: Английский

Citations

69

Recent Progress in Multiterminal Memristors for Neuromorphic Applications DOI Creative Commons

Yan‐Bing Leng,

Yu‐Qi Zhang,

Ziyu Lv

et al.

Advanced Electronic Materials, Journal Year: 2023, Volume and Issue: 9(6)

Published: April 23, 2023

Abstract The essential step for developing neuromorphic systems is to construct more biorealistic elementary devices with rich spatiotemporal dynamics exhibit highly separable responses in dynamic environmental circumstances. Unlike transistor‐based and circuits zeroth‐order complexity, memristors intrinsically express some simple biomimetic functions. However, only two‐terminal structure, precise control of operation principles ensure large space, improved linearity symmetry, multimodal as well high‐order complexity hard achieve a traditional memristor owing its limited degree freedom. Therefore, multiterminal including both concrete terminals virtual (light, pressure, gas, ferroelectric polarity, etc.) have been proposed obtain modulation memristive characteristics. This review focuses on the recent progress their applications. principle, application computing different scenarios, existing challenges future prospects are discussed.

Language: Английский

Citations

25

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses DOI
Guoliang Wang, Fei Sun, Shiyu Zhou

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(9), P. 12073 - 12084

Published: Feb. 21, 2024

Memristors can be used to mimic synaptic behavior in artificial neural networks, which makes them a key component neuromorphic computing and holds promise for advancing the field. In this study, memory device based on ZnO-BaTiO

Language: Английский

Citations

13

Recent progress on solar blind deep ultraviolet photodetectors based on metal halide perovskites DOI

Wanfang Yang,

Yutian Lei,

Zhiwen Jin

et al.

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: 12(21), P. 7497 - 7512

Published: Jan. 1, 2024

This review introduced the research progress and present situation of solar blind detectors based on metal halide perovskite (MHP) in recent years from different dimensions: three-dimensional, two-dimensional, one-dimensional zero dimensional.

Language: Английский

Citations

11

Synaptic Behavior of Iodine‐Enriched Copper‐Based Perovskite Memristors Developed Through a Sustainable Solution Approach DOI
Subhajit Dutta,

Swagata Panchanan,

Jung Hyeon Yoo

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 29, 2024

Abstract The advancement of digital technology has spurred the proliferation data, creating a pressing need for efficient storage solutions. In this regard, memristors have emerged as promising contenders next‐generation non‐volatile memory, offering superior electrical capabilities. Among memristor materials, lead halide perovskites garnered significant interest due to their tuneable properties, facile synthesis methods, and remarkable resistive switching (RS) performance. However, concerns over environmental toxicity stability remain. This issue been addressed by copper (Cu) based that exhibit wide bandgap semiconducting properties with zero long‐term stability. manuscript, novel approach is investigated achieve iodine‐enriched Cs–Cu–I perovskite thin films applications. Through strategic functionalization processes, optoelectronic are achieved in films. modified (CCI device) exhibits excellent RS behavior at low operating voltage 0.7 V, long retention period 4 × 10 3 s very power consumption 2 −9 W. experimental realization synaptic from CCI device demonstrated through its spike‐rate‐dependent plasticity (SRDP) behavior. response short‐ pulses experimentally verifies Atkinson Shiffrin psychological model training human brain. work not only highlights potential devices RRAM but also paves way improved lead‐free perovskite‐based neuromorphic biological

Language: Английский

Citations

10

Improved resistive switching performance and in-depth mechanism analysis in Mn-doped SrTiO3-based RRAM DOI
Yusheng Yang, Bai Sun, Guangdong Zhou

et al.

Materials Today Communications, Journal Year: 2023, Volume and Issue: 35, P. 105512 - 105512

Published: Jan. 31, 2023

Language: Английский

Citations

17