A Material Design Guideline for Self-assembled Vertically Aligned Nanocomposite Thin Films DOI Creative Commons
Jiawei Song, Haiyan Wang

Journal of Physics Materials, Journal Year: 2024, Volume and Issue: 8(1), P. 012002 - 012002

Published: Dec. 9, 2024

Abstract Nanocomposite thin films, comprising two or more distinct materials at nanoscale, have attracted significant research interest considering their potential of integrating multiple functionalities for advanced applications in electronics, energy storage, photonics, photovoltaics, and sensing. Among various fabrication technologies, a one-step pulsed laser deposition process enables the self-assembly into vertically aligned nanocomposites (VANs). The demonstrated VAN systems include oxide–oxide, oxide–metal, nitride–metal films growth mechanisms are vastly different. These complexities pose challenges designs, selection, prediction resulted morphologies properties. review examines key roles that surface plays provides generalized design guideline combining factors lattice strain/mismatch, along with other related to kinetics collectively influence morphology films. This aims offer valuable guidelines future material selection microstructure development self-assembled

Language: Английский

Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co3O4/p-Si memristor DOI
Indranil Maity, Richa Bharti, Ayash Kanto Mukherjee

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(1)

Published: Jan. 2, 2025

In this work, brain-like experiential learning/forgetting ability is demonstrated with the help of various synaptic adaptation rules, namely, short-term potentiation/short-term depression, long-term potentiation/long-term spike rate-dependent plasticity, and spike-time-dependent plasticity in a thin-film device. The model device used here unidirectional thin film nanocrystalline Co3O4, grown on p-Si (100) substrate using pulsed laser deposition technique to fabricate metal–insulator–semiconductor type memristor. Along this, we found an analog bipolar-type switching behavior excellent resistive properties terms endurance, retention, ON–OFF ratio suitable for CMOS-based memory applications. conduction mechanisms are elucidated speculative band diagram formulated from UV-visible spectroscopy data.

Language: Английский

Citations

1
Enhancing Assistive Technologies With Neuromorphic Computing DOI

G. Chandra,

Bhanuprakash Ananthakumar,

Ramya Raghavan

et al.

Advances in computational intelligence and robotics book series, Journal Year: 2024, Volume and Issue: unknown, P. 207 - 232

Published: Oct. 4, 2024

The development of intelligent neuroprosthetics, which promise to augment human brain function is vital for augmentative assistive technologies. Neuromorphic sensors and processors are particularly adept at mimicking the brain's efficient sensory processing, offering devices an advanced capability perceive interpret complex environmental stimuli. application these technologies in computer interfaces suggests a future where transformative advancements not only possible but imminent, facilitating novel methods human-computer interaction providing insights into intricate workings through AI machine learning techniques. This paper explores integration neuromorphic with brain-computer (BCIs), highlighting potential enhance revolutionize communication healthcare. However, realization computing's full within BCIs contingent upon overcoming significant technological ethical challenges.

Language: Английский

Citations

4
An ion-gating synaptic memristor based on tri-layer HfOx composition regulation DOI

Lanqing Zou,

Jun Zhang, Yunhui Yi

et al.

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

This study developed tri-layer HfO x /HfO 2 memristors with an ion-gating interlayer, enabling precise control over conductive filaments and achieving high consistency linearity.

Language: Английский

Citations

0
Study on the Zr doping effect on the performance of BaTiO3-based artificial synapses DOI Creative Commons

Jianyuan Zhang,

Zhenxun Tang, Linjie Liu

et al.

Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(13)

Published: April 1, 2025

Memristors are considered as key components of brain-like hardware to meet the demand for energy-efficient computing in era big data. The realization synaptic and neuronal functions based on memristors is a prerequisite building artificial neural networks. In this study, we fabricated devices Zr-doped BaTiO3 (BT-xZr) (BTO) thin films grown by pulsed laser deposition method. Compared with BT-0.04Zr film, BT-0.15Zr film effectively inhibits oxygen vacancy generation, which greatly optimizes problem large leakage current device. By applying pulse sequences devices, show better properties than from several aspects, such pair-pulse facilitation, spike time-dependent plasticity, long-term potentiation/depression. We further simulated image recognition performance networks two types devices. When cycle-to-cycle variation was not considered, accuracy 92% 86%, respectively. With included, becomes 90.5% 31%, Our work reveals great impact Zr-doping BTO-based neuromorphic computing.

Language: Английский

Citations

0
Interface engineering for enhanced memristive devices and neuromorphic computing applications DOI Creative Commons
Ming Xiao, Daozhi Shen, Jijie Huang

et al.

International Materials Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: March 3, 2025

Memristors, or memristive devices, have gained substantial attention as valuable building blocks for neuromorphic computing systems. Their dynamic reconfiguration enables simulation of essential analog synaptic and neuronal functionalities, making them promising candidates brain-inspired neural network computing. In recent years, conventional thin film materials low-dimensional nanomaterials been extensively explored in devices the development applications. Despite progress several technical challenges persist, such device-to-device uniformity high device density integration, requiring further improvement at single system level integration. Interface engineering, through careful design physical chemical nature interface two-terminal structure, emerges a method to address these challenges. This review highlights utilization engineering techniques optimize behavior, covering both including 0D quantum dots nanoparticles, 1D nanowire/nanotube, 2D materials, heterostructures nanoscale materials. Two main classes mechanisms involved specifically, electronic ionic modulating are described detail. Recent advancements optical artificial functionalities integration also reviewed. concludes with remaining how would be addressing issues. comprehensive serves guide atomic-scale research, while emphasizing broader potential kinetics enabling various exciting physiochemical properties reconfigurable functionalities.

Language: Английский

Citations

0
Complex Oxide‐metal Hybrid Metamaterials with Integrated Magnetic and Plasmonic Non‐noble Metal Nanostructures DOI Creative Commons
Jijie Huang, Bin Zhang,

Danny Hermawan

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 10, 2025

Abstract Vertically aligned nanocomposite (VAN) thin films offer exceptional physical properties through diverse material combinations, providing a robust platform for designing complex nanocomposites with tailored performance. Considering materials compatibility issues, most of oxide‐metal VANs have focused on noble metals as the secondary phase in oxide matrix. Here, an hybrid metamaterials VAN form has been designed which combines ferroelectric BaTiO 3 (BTO) two immiscible non‐noble metal elements Co and Cu, resulting three‐phase BTO‐Co‐Cu (BTO‐CC) film. This film exhibits characteristic nanopillar‐in‐matrix nanostructure three distinct types nanopillar morphologies, i.e., Co‐rich cylindrical nanopillars, Cu‐Co‐nanolaminated rectangular nanopillars Co‐Cu‐core–shell nanopillars. Phase field modeling indicates constructed structure is resulted from interplay between thermochemical, chemomechanical, interfacial energy driving forces. The strong structural anisotropy leads to anisotropic optical magnetic properties, presenting potential hyperbolic metamaterial (HMM) transverse‐positive dispersion near‐infrared region. inclusion Cu induces surface plasmon resonance (SPR) visible Additionally, demonstrated BTO/BTO‐CC bilayer, confirming room‐temperature multiferroicity novel exploring electro‐magneto‐optical coupling along vertical interfaces toward future integrated devices.

Language: Английский

Citations

0
Nanoscaffold Ba0.6Sr0.4TiO3:Nd2O3 ferroelectric memristors crossbar array for neuromorphic computing and secure encryption DOI Creative Commons
Weifeng Zhang, Jikang Xu,

Yongrui Wang

et al.

Journal of Materiomics, Journal Year: 2025, Volume and Issue: unknown, P. 101051 - 101051

Published: March 1, 2025

Language: Английский

Citations

0
Ultrathin Ternary FeCoNi Alloy Nanoarrays in BaTiO3 Matrix for Room-Temperature Multiferroic and Hyperbolic Metamaterial DOI
Jijie Huang, Leigang Li,

Zedong Hu

et al.

Nano Letters, Journal Year: 2024, Volume and Issue: 24(33), P. 10081 - 10089

Published: Aug. 7, 2024

Multifunctional vertically aligned nanocomposite (VAN) thin films exhibit considerable potential in diverse fields. Here, a BaTiO

Language: Английский

Citations

2
Self-assembled all-oxides three-phase vertically aligned nanocomposite thin film with multifunctionality DOI
Jijie Huang, Yuan Fang, Ping Lu

et al.

Nano Research, Journal Year: 2024, Volume and Issue: 17(9), P. 8226 - 8232

Published: July 1, 2024

Language: Английский

Citations

1
Integration of CeO2-Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses DOI Creative Commons
Zedong Hu, Hongyi Dou, Yizhi Zhang

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(47), P. 64951 - 64962

Published: Nov. 15, 2024

The CeO2-based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, challenges such as high power consumption poor device reliability hinder broad application in neuromorphic microchips. To tackle these issues, this work, we design novel bilayer (BL) by integrating with Co-CeO2 vertically aligned nanocomposite (VAN) layer compare the single (SL) memristor. Preliminary electrical testing reveals that BL offers reduced set/reset voltage (∼67% lower), higher ratio (∼5 × 102), enhanced reliability, improved device-to-device variation compared SL Insight from COMSOL simulation, coupled microstructural analysis, provides comprehensive elucidation on how VAN facilitates selective conductive filament (CF) formation. Subsequently, plasticity of is evaluated through long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), spike-time-dependent (STDP). spiking neural network (SNN) built upon achieves remarkable accuracy (∼94%) after only 12 iterations, underscoring potential high-performance networks.

Language: Английский

Citations

1