Nonlocalized Conductive Paths Construction and In-depth Mechanism Analysis for the Robust Resistive Switching in Halide Perovskites DOI
Yu Yan, Hongwei Ge, Xiaohang Zhang

et al.

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 14, 2025

The conductive paths (CPs) established by defects in halide perovskites (HPs) tend to be disrupted under external influences, leading deterioration of their RRAM performances. Here we propose an effective strategy enhance the CPs HP RRAMs doping Ag+ partially substitute Pb2+ MAPbI3, which facilitates nonlocalized growth Ag and thereby improves stability CPs. optimal doped device demonstrates excellent performances including high ON/OFF ratios (>107), long retention (>105 s), large endurance (>103 cycles), uniform parameters, yield. In-depth mechanism investigation illustrates homogeneous distribution migration a sufficient quantity contribute formation stable, HP. This possesses superiorities not requiring participation active electrode, simple material preparation, broad applicability, provides new perspective for developing high-performance RRAMs.

Language: Английский

Regulating the Phase and Optical Properties of Mixed‐Halide Perovskites via Hot‐Electron Engineering DOI Creative Commons
Chun‐Ho Lin, Changxu Liu,

Jialin Yang

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(38)

Published: April 13, 2024

Abstract The rapid development of mixed‐halide perovskites has established a versatile optoelectronic platform owing to their extraordinary physical properties, but there remain challenges toward achieving highly reliable synthesis and performance, in addition, post‐synthesis approaches for tuning photoluminescence properties after device fabrication limited. In this work, an effective approach is reported leveraging hot electrons generated from plasmonic nanostructures regulate the optical perovskites. A metasurface composed Au nanoparticles can effectively tailor both location‐specific phase segregation CsPbI 2 Br thin films. ultrafast transient absorption spectroscopy measurements reveal electron injection on timescale hundreds femtoseconds. Photocurrent confirm hot‐electron‐enhanced photon‐carrier conversion, gate‐voltage observed because correlated carrier halide migration perovskite Finally, characteristics gate‐modulated light emission are found conform rectified linear unit function, serving as nonlinear electrical‐to‐optical converters artificial neural networks. Overall, engineering demonstrated work provides control perovskites, underscoring potential metasurfaces advancing technologies.

Language: Английский

Citations

8

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices DOI Creative Commons
Soyeon Kim, Heyi Zhang, Jenifer Rubio‐Magnieto

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 10087 - 10103

Published: Sept. 27, 2024

With the advent of generation artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) in spotlight as potential candidates for these due their unique switching characteristics low energy consumption flexible integration compatibility across sources scalability. We outline operating principles HP-based memristors devices. explain filamentary- interface-type according type conducting pathway occurring inside active HP layer mechanisms depending species that make up this pathway. summarize types current changes beneficial device applications finally organize suggested analysis tools physical models enable experimental determination from perspectives.

Language: Английский

Citations

8

Go beyond the limit: Rationally designed mixed-dimensional perovskite/semiconductor heterostructures and their applications DOI Creative Commons
Weili Yu, Feng Li, Tao Huang

et al.

The Innovation, Journal Year: 2022, Volume and Issue: 4(1), P. 100363 - 100363

Published: Dec. 20, 2022

Halide perovskite heterojunctions rationally integrate the chemical and physical properties of multi-dimensional perovskites judiciously chosen semiconductor materials, offering promise going beyond limit a single component. This emerging platform materials innovation offers fresh opportunities to tune material properties, discover interesting phenomena, enable novel applications. In this review, we first discuss fundamentals forming with wide range semiconductors, then give an overview research progress halide in terms their optical, electrical, mechanical focusing on how heterojunction tunes energy band structure, electrical transport, charge recombination behaviors. We further outline perovskite-based optoelectronics. Finally, challenges future directions for perovskite/semiconductor are discussed.

Language: Английский

Citations

26

Lead‐Free Perovskite Cs2SnBr6/rGO Composite for Photocatalytic Selective Oxidation of 5‐Hydroxymethylfurfural to 2,5‐Diformylfuran DOI
Liwen Yin, Yaqiang Wu, Xiaolei Bao

et al.

Chemistry - A European Journal, Journal Year: 2023, Volume and Issue: 29(39)

Published: April 28, 2023

Severe poisonousness and prolonged instability existing in organic-inorganic lead-based perovskite are two matters seriously hindering its potential future application photocatalysis. Therefore, it is particularly important to explore ecology-friendly, air-stable highly active metal-halide perovskites. Herein, a new stable lead-free Cs2 SnBr6 decorated with reduced graphene oxide (rGO), synthesized employed the photocatalytic organic conversion. The as-prepared ultrastable, exhibiting no clear changes after being placed air for six months. /rGO composite shows excellent activity photo-driven-oxidation of 5-hydroxymethylfurfural (HMF) high value enclosed 2,5-diformylfuran (DFF), achieving>99.5 % conversion HMF 88 DFF selectivity presence green oxidant O2 . Comprehensive characterizations disclose multistep reaction mechanism, demonstrating that molecular oxygen, photogenerated carriers, ⋅O2- 1 altogether synergistically participate effective photo-driven DFF. This work expands material gallery towards selective environmentally friendly options application.

Language: Английский

Citations

16

Multi‐Wavelength‐Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System DOI
Jiaqi Han, Xuanyu Shan, Ya Lin

et al.

Small, Journal Year: 2023, Volume and Issue: 19(23)

Published: March 8, 2023

Photoelectric memristor has attracted many attentions thanks to their promising potential in optical communication chips and artificial vision systems. However, the implementation of an visual system based on memristive devices remains a considerable challenge because most photoelectric memristors cannot recognize color. Herein, multi-wavelength recognizable silver(Ag) nanoparticles (NPs) porous silicon oxide (SiOx ) nanocomposites are presented. Rely effects localized surface plasmon resonance (LSPR) excitation Ag NPs SiOx , set voltage device can be gradually reduced. Moreover, current overshoot problem is alleviated suppress conducting filament overgrowth after visible light irradiation with different wavelengths, resulting diverse low resistance states (LRS). Taking advantage characteristics controlled switching LRS distribution, color image recognition finally realized present work. X-ray photoelectron spectroscopy (XPS) conductive atomic force microscopy (C-AFM) show that plays important role resistive (RS) process: photo-assisted ionization leads significant reduction current. This work provides effective method toward development multi-wavelength-recognizable for future system.

Language: Английский

Citations

15

Space-resolved light emitting and lasing behaviors of crystalline perovskites upon femtosecond laser ablation DOI Creative Commons
Rahul Rajan, Tao Huang, Weili Yu

et al.

Materials Today Physics, Journal Year: 2023, Volume and Issue: 31, P. 101000 - 101000

Published: Feb. 1, 2023

Language: Английский

Citations

14

Surface passivation of CsPbBr3 films by interface engineering in efficient and stable self-powered perovskite photodetector DOI
Yue Zhao, Shujie Jiao, Shuo Liu

et al.

Journal of Alloys and Compounds, Journal Year: 2023, Volume and Issue: 965, P. 171434 - 171434

Published: July 17, 2023

Language: Английский

Citations

13

Neuromorphic optoelectronic devices based on metal halide perovskite DOI Creative Commons
Qiang Liu, Yiming Yuan, Junchi Liu

et al.

Materials Today Electronics, Journal Year: 2024, Volume and Issue: 8, P. 100099 - 100099

Published: April 22, 2024

Neuromorphic electronics has received increased attention for their application in brain-inspired computing and artificial sensorimotor nerves. Metal halide perovskite (MHP) been proved to be a candidate material use optoelectronic neuromorphic devices. Herein, we review on the recent research progress of MHP materials, with focus applications optoelectronics. First, materials that are used devices especially applications, sequence all-inorganic, organic-inorganic hybrid lead-free materials. Then, summarize design fabrication two-terminal (2-T) three-terminal (3-T) synaptic devices, including working mechanisms as operated by electrical light inputs, relationship between properties composition structure functional layers. Finally, these pattern recognition, bionic vision, sensing modulation, experience associative learning, logic high-pass filtering. This aims could potentially inspire future field electronics.

Language: Английский

Citations

5

Ion dynamics in metal halide perovskites for resistive-switching memory and neuromorphic memristors DOI Creative Commons
Sumin Lee,

Jeonghyeon Son,

Beomjin Jeong

et al.

Materials Today Electronics, Journal Year: 2024, Volume and Issue: 9, P. 100114 - 100114

Published: Aug. 23, 2024

Language: Английский

Citations

5

Manipulation of ferromagnetism in intrinsic two-dimensional magnetic and nonmagnetic materials DOI Creative Commons

Zhihao Lei,

CI Sathish, Xun Geng

et al.

Matter, Journal Year: 2022, Volume and Issue: 5(12), P. 4212 - 4273

Published: Dec. 1, 2022

Language: Английский

Citations

20