Optical Memory in a MoSe₂/Clinochlore Device

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 13, 2025

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition-metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities light-emitting devices. Recently, a memory-driven device, termed Mem-emitter, was proposed by using these monolayers atop dielectric substrates. The successful realization of such heavily depends on the selection optimal substrate. Here, we report pronounced memory effect MoSe2/clinochlore evidenced an electric hysteresis intensity and energy MoSe2 monolayer emissions. This demonstrates both population- transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates effects with internal state variables substrate, emphasizing that clinochlore-layered structure is robust rich response. work introduces novel two-dimensional device promising applications functionalities, highlighting importance alternate insulators fabrication heterostructures.

Language: Английский

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MXene-based electrode materials for supercapacitors: Synthesis, properties, and optimization strategies

Materials Today Sustainability, Journal Year: 2023, Volume and Issue: 24, P. 100551 - 100551

Published: Sept. 16, 2023

Language: Английский

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Van der Waals materials-based floating gate memory for neuromorphic computing

Chip, Journal Year: 2023, Volume and Issue: 2(4), P. 100059 - 100059

Published: July 20, 2023

With the advent of "Big Data Era", rapid growth in different types data makes it urgent to improve storage density and computation speed. Flash memory with a floating gate (FG) structure is attracting attention due its miniaturization, low power consumption, reliable storage, which very effective solving problems large capacity high integration density. Meanwhile, FG charge principle can simulate synaptic plasticity perfectly, helps break traditional von Neumann computing architecture used as an artificial synapse for neuromorphic computations inspired by human brain. Among many candidate materials manufacturing devices, van der Waals (vdW) have attracted widespread their atomic thickness, mobility, sustainable miniaturization properties. VdW heterostructure combines rich physics potential 3D arbitrary stacking ability, opening up various possibilities new functional integrated devices consumption flexible applications. This paper provides comprehensive review based on vdW structure, including working principles typical structures focusing high-performance memories versatile applications computing. Finally, challenges are discussed. will shed light design fabrication material-based engineering, helping advance development practical promising

Language: Английский

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2D materials for intelligent devices

Science China Physics Mechanics and Astronomy, Journal Year: 2023, Volume and Issue: 66(11)

Published: June 5, 2023

Language: Английский

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Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy‐Efficient Neuromorphic Hardware

Small, Journal Year: 2023, Volume and Issue: 20(5)

Published: Sept. 26, 2023

Abstract Designing reliable and energy‐efficient memristors for artificial synaptic arrays in neuromorphic computing beyond von Neumann architecture remains a challenge. Here, based on emerging layered nickel phosphorus trisulfide (NiPS 3 ) are reported that exhibit several favorable characteristics, including uniform bipolar nonvolatile switching with small operating voltage (<1 V), fast speed (< 20 ns), high On/Off ratio (>10 2 ), the ability to achieve programmable multilevel resistance states. Through direct experimental evidence using transmission electron microscopy energy dispersive X‐ray spectroscopy, it is revealed resistive mechanism Ti/NiPS /Au device related formation dissolution of Ti conductive filaments. Intriguingly, further investigation into microstructural chemical properties NiPS suggests penetration ions accompanied by drift phosphorus‐sulfur ions, leading induced P/S vacancies facilitate Furthermore, demonstrated memristor, when quasi‐reset mode, effectively emulates long‐term weight plasticity. By utilizing crossbar array, multipattern memorization multiply‐and‐accumulate (MAC) operations successfully implemented. Moreover, owing highly linear symmetric multiple conductance states, pattern recognition accuracy ≈96.4% neural network simulation systems.

Language: Английский

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