High-Speed and Low-Energy Resistive Switching with Two-Dimensional Cobalt Phosphorus Trisulfide for Efficient Neuromorphic Computing DOI
Yun Ji, Baoshan Tang, Jinyong Wang

et al.

ACS Nano, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 31, 2024

Two-dimensional (2D) materials hold significant potential for the development of neuromorphic computing architectures owing to their exceptional electrical tunability, mechanical flexibility, and compatibility with heterointegration. However, practical implementation 2D memristors in is often hindered by challenges simultaneously achieving low latency energy consumption. Here, we demonstrate based on cobalt phosphorus trisulfide (CoPS

Language: Английский

Artificial synapse based on a tri-layer AlN/AlScN/AlN stacked memristor for neuromorphic computing DOI

Xinhuan Dai,

Qilin Hua, Chun‐Sheng Jiang

et al.

Nano Energy, Journal Year: 2024, Volume and Issue: 124, P. 109473 - 109473

Published: March 9, 2024

Language: Английский

Citations

20

Nanomaterials for Flexible Neuromorphics DOI

Guanglong Ding,

Hang Li,

Jiyu Zhao

et al.

Chemical Reviews, Journal Year: 2024, Volume and Issue: 124(22), P. 12738 - 12843

Published: Nov. 5, 2024

The quest to imbue machines with intelligence akin that of humans, through the development adaptable neuromorphic devices and creation artificial neural systems, has long stood as a pivotal goal in both scientific inquiry industrial advancement. Recent advancements flexible electronics primarily rely on nanomaterials polymers owing their inherent uniformity, superior mechanical electrical capabilities, versatile functionalities. However, this field is still its nascent stage, necessitating continuous efforts materials innovation device/system design. Therefore, it imperative conduct an extensive comprehensive analysis summarize current progress. This review highlights applications neuromorphics, involving inorganic (zero-/one-/two-dimensional, heterostructure), carbon-based such carbon nanotubes (CNTs) graphene, polymers. Additionally, comparison summary structural compositions, design strategies, key performance, significant these are provided. Furthermore, challenges future directions pertaining materials/devices/systems associated neuromorphics also addressed. aim shed light rapidly growing attract experts from diverse disciplines (e.g., electronics, science, neurobiology), foster further for accelerated development.

Language: Английский

Citations

15

Advances in two-dimensional heterojunction for sophisticated memristors DOI

Shiwei Qin,

Ye Tao, Ting Hu

et al.

Materials Today Physics, Journal Year: 2024, Volume and Issue: 41, P. 101336 - 101336

Published: Jan. 11, 2024

Language: Английский

Citations

9

High‐Performance Memristors Based on Few‐Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing DOI Open Access
Zhengjin Weng,

Haofei Zheng,

Lei Wei

et al.

Advanced Functional Materials, Journal Year: 2023, Volume and Issue: 34(9)

Published: Nov. 27, 2023

Abstract While transition‐metal thiophosphate (MPX 3 ) materials have been a subject of extensive research in recent years, experimental studies on MPX ‐based memristors are still their early stages, with device performance being less than ideal. Here, the successful fabrication high‐yield, high‐performance, and uniform demonstrated to possess desired characteristics for neuromorphic computing using single‐crystalline few‐layered manganese phosphorus trisulfide (MnPS as resistive switching medium. The Ti/MnPS /Au memristor exhibits small voltage (<1 V), long memory retention (10 4 s), fast speed (≈20 ns), high On/Off ratio (nearly two orders magnitude), simultaneously achieves emulation synaptic weight plasticity. microscopic investigation structural chemical few‐layer MnPS reveals presence defects residual Ti throughout stacked layer following application voltage, which contributes uniformity low set voltage. With highly linear symmetric analog updates coupled capability accurate decimal arithmetic operations, accuracy 95.15% supervised learning MNIST handwritten recognition dataset is achieved artificial neural network. Furthermore, convolutional image processing can be implemented hardware multiply‐and‐accumulate operation an crossbar array.

Language: Английский

Citations

17

Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition DOI
Minjae Kim, Dong‐Eun Kim, Yue Wang

et al.

Applied Materials Today, Journal Year: 2024, Volume and Issue: 38, P. 102204 - 102204

Published: April 25, 2024

Language: Английский

Citations

8

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe3/MoS2 DOI
Juanjuan Yang, Jiaming Song, Xin Zhao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(25), P. 32334 - 32343

Published: June 11, 2024

Transition metal thiophosphates (MTPs) are a group of emerging van der Waals materials with widely tunable band gaps. In the MTP family, CdPSe

Language: Английский

Citations

6

Two-dimensional material-based memristive devices for alternative computing DOI Creative Commons

Jey Panisilvam,

Ha Young Lee,

Sujeong Byun

et al.

Nano Convergence, Journal Year: 2024, Volume and Issue: 11(1)

Published: June 27, 2024

Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms charge transport. Memristors are key components a wide range of applications including neuromorphic computing, which is becoming increasingly important artificial intelligence applications. Crossbar arrays an component the development hardware-based neural networks composed 2D materials. In this paper, we summarize current state research on material-based devices utilizing different mechanisms, along with application these crossbar arrays. Additionally, discuss challenges future directions field.

Language: Английский

Citations

5

Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode DOI
Yesheng Li, Yao Xiong, Xiaolin Zhang

et al.

Nature Electronics, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 21, 2024

Language: Английский

Citations

4

Enhancing memristor performance with 2D SnOx/SnS2 heterostructure for neuromorphic computing DOI Creative Commons

Yangwu Wu,

Sifan Li, Yun Ji

et al.

Science China Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Language: Английский

Citations

0

Exploring the potential of 2D PtTe2-based memristors for neuromorphic computing DOI
Xiaojuan Lian,

Xin Zhang,

Shiyu Li

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(6)

Published: Feb. 10, 2025

Neuromimetic devices have emerged as transformative technologies with the potential to redefine traditional computing paradigms and enable advanced artificial neural systems. Among various innovative materials, two-dimensional (2D) materials garnered attention frontrunners for next-generation device fabrication. In this work, we report fabrication comprehensive characterization of a memristor based on 2D PtTe2. The demonstrates exceptional performance metrics, including high OFF/ON ratio, low switching voltage, long data retention time. Leveraging density functional theory calculations, unravel underlying conduction mechanism, revealing pivotal role Ag conductive filaments in resistive behavior. Furthermore, neuromorphic capabilities PtTe2 were evaluated through its emulation key brain-inspired synaptic functionalities, such long-term depression/enhancement, paired-pulse facilitation, spike-timing-dependent plasticity. By modulating electrical conductance, implemented convolutional network MNIST handwritten digit recognition, achieving remarkable accuracy 97.49%. To further illustrate adaptive learning capabilities, demonstrated Pavlov's dog experiment using device. This study establishes promising material applications represents critical step forward bridging gap between architectures. These findings lay robust foundation future exploration field engineering.

Language: Английский

Citations

0