Journal of Semiconductors,
Journal Year:
2024,
Volume and Issue:
45(12), P. 122101 - 122101
Published: Dec. 1, 2024
Abstract
In
this
study,
aluminum-doped
zinc
oxide
(AZO)
thin
films
were
deposited
onto
a
low-temperature
polyethylene
terephthalate
(PET)
substrate
using
DC
magnetron
sputtering.
Deposition
parameters
included
power
range
of
100−300
W,
working
pressure
15
mTorr,
and
temperature
50
°C.
Post-deposition,
flash
lamp
annealing
(FLA)
was
employed
as
rapid
thermal
processing
method
with
pulse
duration
1.7
ms
energy
density
7
J·cm
−2
,
aimed
at
enhancing
the
film's
quality
while
preserving
temperature-sensitive
PET
substrate.
FLA
offers
advantages
over
conventional
annealing,
including
shorter
times
improved
material
properties.
The
structural,
optical,
electrical
characteristics
AZO
assessed
X-ray
diffraction,
field
emission
scanning
electron
microscopy
coupled
energy-dispersive
spectroscopy,
ultraviolet−visible
Hall
effect
measurements.
results
demonstrated
that
properties
varied
deposition
conditions.
Films
200
W
subjected
to
exhibited
superior
crystallinity,
average
visible
light
transmittance
exceeding
80%
resistivity
low
0.38
Ω·cm
representing
95%
improvement
in
transmittance.
Electrical
analysis
revealed
carrier
concentration,
mobility,
influenced
by
both
sputtering
parameters.
These
findings
underscore
effectiveness
optimizing
film
properties,
highlighting
potential
optoelectronics
applications.
Chip,
Journal Year:
2023,
Volume and Issue:
3(1), P. 100080 - 100080
Published: Dec. 20, 2023
Two-dimensional
(2D)
van
der
Waals
materials
have
attracted
great
interest
and
facilitated
the
development
of
post-Moore
electronics
owing
to
their
novel
physical
properties
high
compatibility
with
traditional
microfabrication
techniques.
Their
wafer-scale
synthesis
has
become
a
critical
challenge
for
large-scale
integrated
applications.
Although
approaches
some
2D
been
extensively
explored,
preparation
high-quality
thin
films
well-controlled
thickness
remains
big
challenge.
This
review
focuses
on
applications
in
electronics.
Firstly,
several
representative
layered
including
crystal
structures
unique
electronic
were
introduced.
Then,
current
strategies
at
wafer
scale,
which
are
divided
into
"top-down"
"bottom-up",
reviewed
depth.
Afterwards,
electrical
optoelectronic
devices
discussed.
Finally,
challenges
future
prospects
presented.
It
is
hoped
that
this
will
provide
comprehensive
insightful
guidance
Recent
trends
concerning
hydrogen
as
a
fuel
of
the
future
and
problems
related
to
its
production,
storage
utilization
increase
demand
for
efficient
technologies
these
problems.
A
large
part
such
is
application
advanced
materials
based
on
various
complex
oxides
which
are
used
catalysts
transformation
into
syngas,
membranes
with
selective
permeability
syngas
components
solid
oxide
cells/electrolyzers
well
many
other
applications
in
energy,
electrochemistry
catalysis.
Such
typically
solutions
perovskite
fluorite
structures
or
their
derivatives.
Attention
also
paid
spinel,
apatite,
mayenite,
sheelite,
fergusonite
structures.
The
above-mentioned
continuously
studied
order
modify
optimize
functional
properties.
On
hand,
classes
(weberites,
monazites,
etc.)
recently
discovered
considered
candidate
aforementioned
due
specific
properties
great
potential
improvement.
In
this
review,
some
considered.
Journal of Semiconductors,
Journal Year:
2024,
Volume and Issue:
45(12), P. 122101 - 122101
Published: Dec. 1, 2024
Abstract
In
this
study,
aluminum-doped
zinc
oxide
(AZO)
thin
films
were
deposited
onto
a
low-temperature
polyethylene
terephthalate
(PET)
substrate
using
DC
magnetron
sputtering.
Deposition
parameters
included
power
range
of
100−300
W,
working
pressure
15
mTorr,
and
temperature
50
°C.
Post-deposition,
flash
lamp
annealing
(FLA)
was
employed
as
rapid
thermal
processing
method
with
pulse
duration
1.7
ms
energy
density
7
J·cm
−2
,
aimed
at
enhancing
the
film's
quality
while
preserving
temperature-sensitive
PET
substrate.
FLA
offers
advantages
over
conventional
annealing,
including
shorter
times
improved
material
properties.
The
structural,
optical,
electrical
characteristics
AZO
assessed
X-ray
diffraction,
field
emission
scanning
electron
microscopy
coupled
energy-dispersive
spectroscopy,
ultraviolet−visible
Hall
effect
measurements.
results
demonstrated
that
properties
varied
deposition
conditions.
Films
200
W
subjected
to
exhibited
superior
crystallinity,
average
visible
light
transmittance
exceeding
80%
resistivity
low
0.38
Ω·cm
representing
95%
improvement
in
transmittance.
Electrical
analysis
revealed
carrier
concentration,
mobility,
influenced
by
both
sputtering
parameters.
These
findings
underscore
effectiveness
optimizing
film
properties,
highlighting
potential
optoelectronics
applications.
