Unveiling the tradeoff between device scale and surface nonidealities for an optimized quality factor at room temperature in 2D MoS2 nanomechanical resonators DOI Creative Commons
Pengcheng Zhang, Yueyang Jia, Shuai Yuan

et al.

Microsystems & Nanoengineering, Journal Year: 2024, Volume and Issue: 10(1)

Published: Sept. 27, 2024

Language: Английский

Recent Advances in the Preparation of Gallium‐based 2D Materials and Devices Based on Gallium Liquid Metal DOI Open Access
Fangliang Gao, Zexi Li, Shuti Li

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 14, 2025

Abstract Gallium (Ga) liquid metal has become highly suitable for the preparation of 2D materials due to its unique physical and chemical properties, such as high surface tension, low‐melting‐point, ease oxidization. Ga a very low melting point becomes silver‐white at 29.76 °C. In air, can spontaneously undergo Cabrera‐Mott oxidation reaction form an ultra‐thin oxide layer. This self‐formed layer is considered natural material, other be derived by post‐processing recent years, advancements in techniques have led successful various Ga‐based materials. These possess electronic optical properties along with simple, low‐cost process, offering broad potential advancing new devices. review examines research on from alloys. It discusses applications different kinds devices across multiple fields. Therefore, it expected that will play more significant role development material science future.

Language: Английский

Citations

2
Ultrathin Rare‐Earth Oxyhalides as High‐κ van der Waals Layered Dielectrics DOI Open Access
Zijia Liu, Lei Yin,

Xiange Peng

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 26, 2025

Abstract Van der Waals (vdW) dielectrics are extensively employed to enhance the performance of 2D electronic devices. However, current vdW dielectric materials still encounter challenges such as low constant ( κ ) and difficulties in synthesizing high‐quality single crystals. rare‐earth oxyhalides (REOXs) with exceptional electrical properties present an opportunity for exploration novel high‐ dielectrics. In this study, first time, synthesis a series van layered gadolinium thicknesses down monolayer through space‐confined epitaxy approach demonstrating their application single‐crystalline gate is reported. It exhibits remarkable relative exceeding 17 impressive breakdown field strength 13.5 MV cm −1 . The transistors directly gated by REOXs layer exhibit enhanced electron mobility interface trap density. An ultrahigh on/off ratio 10 9 near‐Boltzmann‐limit subthreshold swing achieved. superior properties, combined universality scalability production method (e.g., millimeter‐scale films achieved), demonstrate that can serve promising electronics, thereby expanding study potentially providing new opportunities development low‐power

Language: Английский

Citations

1
Molybdenum-sulfide-based optoelectronic device for multivalued logic DOI Creative Commons

Kang’an Jiang,

Yuhong Cao,

Dehui Huang

et al.

Cell Reports Physical Science, Journal Year: 2025, Volume and Issue: unknown, P. 102511 - 102511

Published: March 1, 2025

Citations

0
Waveguide-Integrated MoS2 Field-Effect Transistors on Thin-Film Lithium Niobate with High Responsivity and Ultra-Low Dark Current DOI
Fan Yang,

Youtian Hu,

Jiale Ou

et al.

ACS Photonics, Journal Year: 2025, Volume and Issue: unknown

Published: April 4, 2025

Language: Английский

Citations

0
Isolating and identification of layer dependence of correlated states in MoSe2/WS2 moiré heterojunction DOI

Yuze Meng,

Zenghui Wang

Science China Physics Mechanics and Astronomy, Journal Year: 2025, Volume and Issue: 68(6)

Published: April 18, 2025

Language: Английский

Citations

0
Fully Suspended MoS2 Photodetectors toward High Response Speed and Stable Responsivity DOI

Jianyong Wei,

Zhentao Lian,

Yumeng Liu

et al.

ACS Photonics, Journal Year: 2025, Volume and Issue: unknown

Published: April 24, 2025

Language: Английский

Citations

0
Two-dimensional molecular crystal Sb2O3 for electronics and optoelectronics DOI Open Access
Jing Yu,

Wei Han,

Ruey Jinq Ong

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(2)

Published: May 31, 2024

As a two-dimensional (2D) inorganic molecular van der Waals crystal, Sb2O3 has been widely recognized as an excellent dielectric and encapsulation material due to its wide bandgap, high constant (κ), remarkably air stability. Considering the significance potential application of in future electronic devices, it is valuable summarize recent advancements. In this review, we present latest progress on 2D flakes films, encompassing synthesis methods, physical properties, device applications. First, preparation strategies such chemical vapor deposition, vertical thermal evaporation liquid metal synthesis, atomic layer deposition growth routes are highlighted. Subsequently, mechanical properties phase transition mechanisms presented. Moreover, applications, including layer, photodetector, gate dielectric, demonstrated. Finally, outline challenges research priorities materials.

Language: Английский

Citations

2
Unveiling the tradeoff between device scale and surface nonidealities for an optimized quality factor at room temperature in 2D MoS2 nanomechanical resonators DOI Creative Commons
Pengcheng Zhang, Yueyang Jia, Shuai Yuan

et al.

Microsystems & Nanoengineering, Journal Year: 2024, Volume and Issue: 10(1)

Published: Sept. 27, 2024

Language: Английский

Citations

1