Linear dichroism transition and polarization-sensitive photodetector of quasi-one-dimensional palladium bromide DOI

Wan-Li 万里 Zhu 朱,

Wei-Li 伟立 Zhen 甄,

Rui 瑞 Niu 牛

et al.

Chinese Physics B, Journal Year: 2024, Volume and Issue: 33(6), P. 068101 - 068101

Published: March 22, 2024

Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on in-plane anisotropy quasi-one-dimensional PdBr 2 by using combined measurements angle-resolved polarized Raman spectroscopy (ARPRS) and anisotropic absorption spectrum. The analyses ARPRS data validate properties flake. And spectrum nanoflake demonstrates distinct reversal. Photodetector constructed nanowire exhibits high responsivity 747 A⋅W −1 specific detectivity 5.8 × 10 12 Jones. photodetector prominent photoresponsivity under 405-nm light irradiation with large photocurrent ratio 1.56, which is superior to those most previously reported counterparts. Our offers fundamental insights into strong exhibited , establishing it as candidate for miniaturization integration trends polarization-related applications.

Language: Английский

Broadband Self-powered MoS2/PdSe2/WSe2 PSN Heterojunction Photodetector for High-Performance Optical Imaging and Communication DOI Creative Commons
Chaoyi Zhang, Silu Peng, Yi Ouyang

et al.

Optics Express, Journal Year: 2024, Volume and Issue: 32(22), P. 38136 - 38136

Published: Oct. 1, 2024

Two-dimensional (2D) semi-metal transition metal dichalcogenides (TMDs) have drawn significant attention for their distinctive physical properties. However, the inherent high dark current of these materials and single structure detectors hinder further development photodetectors with performance. Here, we construct a PSN (p-type semiconductor/semi-metal/n-type semiconductor) architecture by sandwiching 2D between two semiconductor layers. In this architecture, top bottom layers generate an internal built-in electric field, while middle layer serves as absorption low-energy photons facilitates dissociation photo-generated carriers. As result, heterojunction device demonstrates wide spectrum optical response from visible to infrared light (405 nm 1550 nm) without requiring external voltage. Working in self-powered mode at room temperature, achieves responsivity 0.56 A/W, detectivity 5.63 × 10 11 Jones, rapid speed 190/74 µs. Additionally, shows potential applications fast communication multi-wavelength imaging. This work presents novel approach developing new type broadband, self-powered, high-performance miniaturized semi-metal-based photodetector.

Language: Английский

Citations

2
Polarization‐Enhanced Narrow‐Band GeS2 2‐D SWIR Spectral Phototransistor DOI
Xiang Liu, Qihua Guo, Hui Xu

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(40)

Published: May 13, 2024

Abstract Integrated computational spectrometers with gate‐tunable nano heterostructures and reconstruction algorithms are attractive for on‐chip gas‐sensing have enabled versatile spectrum detectors. However, they require the selective optical filtering capabilities of wavelengths, restricting their efficient implementation in narrow‐band photodetection. In this study, a printable spectral phototransistor is developed high dynamic detectivity (10 12 Jones 10 5 Hz at −3 db bandwidth) modulated by GeS 2 nanosheet heterostructure short‐wave infrared (SWIR) regime. Using transport mode switching carriers polarization‐sensitivity two‐dimension (2‐D) nanosheet, SWIR demonstrates an accurate (96.7% accuracy) detector performed deep‐learning analysis artificial neural network (ANN). Furthermore, 2‐D based phototransistor, characterized its in‐plane anisotropy electrically reconfigurable properties, extends applicability photodetection 15 nm Full Width Half Maximum (FWHM) to recognition trace‐gases parts per billion (ppb) level.

Language: Английский

Citations

1
Organic–Inorganic Hybrid Perovskite Photosensitive Field‐Effect Transistor Enabled by Poly(3‐Hexylthiophene‐2,5‐Diyl) Channel Layer DOI
Fobao Huang, Qingyuan Yang,

Yiluo Ding

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 6, 2024

Abstract Photosensitive field‐effect transistors (PhFETs) are three‐terminal photodetectors that enable photocurrent modulation and amplification through gate‐voltage control. Organic‐inorganic hybrid perovskites known for their high photoelectric conversion efficiency, but ion migration in these materials causes gate‐field shielding, posing challenges constructing PhFETs using only 3D perovskites. To address this issue, a heterojunction strategy is proposed the stable process‐compatible organic semiconductor poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) as channel layer organic‐inorganic perovskite cesium‐doped formamidinium lead trihalide (FA 0.9 Cs 0.1 PbI 3 ) light absorption layer. The bottom‐gate top‐contact fabricated all‐solution processes. By comparing PhFET performance across three active‐layer structures (perovskite, P3HT, perovskite/P3HT) under dark illuminated conditions, it found devices basically do not exhibit have highest light‐to‐dark current ratio; P3HT weak photoresponse at 532 nm; contrast, P3HT/perovskite achieve also substantial photoresponse. effectively modulates or amplifies of device, yielding nearly ten‐fold enhancements responsivity external quantum efficiency compared to devices, along with significantly improved response speed. This study advances development PhFETs.

Language: Английский

Citations

1
Realization of High‐Performance Self‐Powered Polarized Photodetection with Large Temperature Window in a 2D Polar Perovskite DOI
Lei Wang,

Chenhua Wu,

Zhijin Xu

et al.

Small, Journal Year: 2023, Volume and Issue: 20(23)

Published: Dec. 25, 2023

Abstract Polarization photodetection taking advantage of the anisotropy 2D materials shines brilliantly in optoelectronic fields owing to differentiating optical information. However, previously reported polarization detections are mostly dependent on external power sources, which is not conducive device integration and energy conservation. Herein, a polar perovskite (CBA) 2 CsPb Br 7 ( CCPB , CBA = 4‐chlorobenzyllamine) has been successfully synthesized, shows anticipated bulk photovoltaic effect (BPVE) with an open‐circuited photovoltage up ≈0.2 V. Devices based monomorph fulfill fascinating self‐powered polarized large ratio 2.7 at room temperature. Moreover, features high phase‐transition temperature (≈475 K) prompts such window operation, since BPVE generated by spontaneous can only exist structure prior phase transition. Further computational investigation reveals introduction + dipole moment contributes quite (17.5 µC cm −2 ) further super transition . This study will promote application for high‐temperature conditions.

Language: Английский

Citations

1
Linear dichroism transition and polarization-sensitive photodetector of quasi-one-dimensional palladium bromide DOI

Wan-Li 万里 Zhu 朱,

Wei-Li 伟立 Zhen 甄,

Rui 瑞 Niu 牛

et al.

Chinese Physics B, Journal Year: 2024, Volume and Issue: 33(6), P. 068101 - 068101

Published: March 22, 2024

Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on in-plane anisotropy quasi-one-dimensional PdBr 2 by using combined measurements angle-resolved polarized Raman spectroscopy (ARPRS) and anisotropic absorption spectrum. The analyses ARPRS data validate properties flake. And spectrum nanoflake demonstrates distinct reversal. Photodetector constructed nanowire exhibits high responsivity 747 A⋅W −1 specific detectivity 5.8 × 10 12 Jones. photodetector prominent photoresponsivity under 405-nm light irradiation with large photocurrent ratio 1.56, which is superior to those most previously reported counterparts. Our offers fundamental insights into strong exhibited , establishing it as candidate for miniaturization integration trends polarization-related applications.

Language: Английский

Citations

0