Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 14, 2025
Abstract
Hole‐selective
self‐assembled
monolayers
(SAMs)
have
emerged
as
a
novel
recombination
junction
material
critical
in
the
development
of
high‐performance
photovoltaic
devices.
However,
SAMs
tend
to
accumulate
on
substrates
and
can
be
desorbed
by
strong
polar
solvents,
resulting
poor‐quality
perovskite
films.
Herein,
simple
phosphonic
acid
SAM
molecule
named
V3PACz
with
vinyl
ether
side
groups
is
first
strategically
developed
for
situ
fabrication
polymeric
hole‐transport
layer
(HTL).
The
chain
improves
surface
polarity
solubility
SAM.
More
importantly,
enable
polymerization,
forming
densely
packed
stable
HTL
high
conductivity
anti‐solvent
resistance.
Meanwhile,
Poly‐V3PACz
synchronously
provides
satisfied
wettability
interfacial
functionalization.
Utilizing
these
advantages,
Poly‐V3PACz‐based
device
achieves
champion
power
conversion
efficiency
25.21%,
which
represents
one
highest
reported
efficiencies
crosslinked
HTLs
inverted
PSCs.
unencapsulated
maintained
92.1%
its
initial
PCE
after
500
h
storage
at
85
°C
(dark),
91.9%
1200
tracking
maximum
point
(MPP).
This
work
underscores
promising
potential
crosslinking
strategy
fabricating
toward
Efficient
Stable
Small Methods,
Journal Year:
2024,
Volume and Issue:
unknown
Published: April 9, 2024
Abstract
While
the
2D/3D
heterojunction
is
an
effective
method
to
improve
power
conversion
efficiency
(PCE)
of
perovskite
solar
cells
(PSCs),
carriers
are
often
confined
in
quantum
wells
(QWs)
due
unique
structure
2D
perovskite,
which
makes
charge
transport
along
out‐of‐plane
direction
difficult.
Here,
a
ferroelectric
formed
by
4,4‐difluoropiperidine
hydrochloride
(2FPD)
inverted
PSCs
reported.
The
enriched
2
PbI
4
layer
with
n
=
1
on
surface
exhibits
response
and
has
oriented
dipoles
direction.
ferroelectricity
dipole
facilitates
enhancement
built‐in
electric
field
(1.06
V)
delay
cooling
process
hot
carriers,
reflected
high
carrier
temperature
(above
1400
K)
prolonged
photobleach
recovery
time
(139.85
fs,
measured
at
bandgap),
improving
conductivity.
In
addition,
alignment
energy
levels
optimized
exciton
binding
(32.8
meV)
reduced
changing
dielectric
environment
surface.
Finally,
2FPD‐treated
achieve
PCE
24.82%
(certified:
24.38%)
synergistic
effect
defect
passivation,
while
maintaining
over
90%
their
initial
after
1000
h
maximum
point
tracking.
ACS Energy Letters,
Journal Year:
2024,
Volume and Issue:
9(9), P. 4283 - 4292
Published: Aug. 7, 2024
There
is
a
significant
challenge
of
charge
recombination
at
the
perovskite/electron
transport
layer
(ETL),
coupled
with
need
optimized
interface
transfer
in
inverted
perovskite
solar
cells
(PSCs).
In
this
work,
an
organometallic
ferrocene-based
molecule,
ferrocenyl-bis-thieno[3,2-b]thiophene-2-carboxylate
(FcTTPc),
inherent
carboxylate
and
thiophene
functionalities
surrounding
central
ferrocene
motif,
meticulously
designed
synthesized
for
modification
perovskite/ETL
interface.
The
groups
FcTTPc
molecule
interact
strongly
components,
effectively
passivating
defects.
Furthermore,
group
can
engage
robust
π–π
interactions
ETL,
thereby
enhancing
transport.
Following
FcTTPc,
improved
alignment
energy
levels
achieved,
significantly
optimizing
carrier
Due
to
via
champion
PSC
achieves
PCE
25.39%.
FcTTPc-modified
devices
maintained
over
96%
their
initial
efficiency
under
40%
relative
humidity
conditions
1500
h.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 25, 2025
Abstract
Microscale
imperfections
and
inhomogeneity
at
buried
interface
leads
to
energy
losses
insufficient
carrier
extraction
of
wide
bandgap
(WBG)
perovskite
solar
cells
(PSCs).
Here,
we
report
a
collaborative
strategy
by
introducing
3‐aminopropanoic
acid
(3‐APA)
mix
with
[4‐(3,6‐dimethyl‐9H‐carbazol‐9‐yl)butyl]phosphonic
(Me‐4PACz)
as
hole‐selective
self‐assembled
monolayer
(SAM).
With
the
addition
3‐APA,
wettability
precursors
is
increased.
Furthermore,
film
morphology
heterogeneity
improved.
As
result,
nonradiative
recombination
interfacial
loss
are
greatly
suppressed.
This
also
marginally
higher
ionization
potential
monolayers,
approximating
valence
band
film.
Benefits
from
suppressed
charge
transfer
loss,
mixed
SAM
present
overcome
passivation
transport
trade‐off,
delivering
V
OC
×
FF
84.5%
S–Q
limit.
The
combine
benefits
enable
efficient
1.67
eV
WBG
PSCs
power
conversion
efficiency
22.4%
high
open
circuit
voltage
1.255
fill
factor
85.5%.
Under
strategy,
demonstrat
all‐perovskite
tandem
28.4%.
The
p-i-n
type
perovskite
solar
cells
with
a
nickel
oxide
(NiOx)
hole
transport
layer
in
combination
self-assembled
monolayers
(SAMs)
have
high
power
conversion
efficiency
(PCE)
of
over
26%.
surface
properties
the
SAM
significant
impact
on
growth
and
crystallization
film.
In
meanwhile,
defects
formed
during
thermal
annealing
at
interface
would
act
as
charge
recombination
centers,
decreasing
device
performance
stability.
To
address
these
issues,
this
work
introduces
3,4,5-trifluorophenylboronic
acid
(3,4,5-3FPBA)
interfacial
modification
to
improve
buried
that
enable
better
With
3,4,5-3FPBA
layer,
based
composition
Cs0.05(FA0.98MA0.02)0.95Pb(I0.95Br0.05)3,
increased
from
21.99%
24.02%.
A
similar
improvement
was
observed
for
Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3,
where
21.87%
22.76%.
universality
has
been
confirmed.
addition,
resulting
showed
improved
stability,
maintaining
75%
its
initial
after
500
h
continuous
heating
85
°C
unencapsulated
devices.
The
increasing
computational
demands
of
artificial
intelligence
(AI)
algorithms
are
exceeding
the
capabilities
conventional
computing
architectures,
creating
a
strong
need
for
novel
materials
and
paradigms.
Memristors
that
integrate
diverse
resistive
switching
(RS)
behaviors
provide
promising
avenue
developing
architectures.
In
this
study,
we
achieve
coexistence
volatile
nonvolatile
RS
in
quasi-2D
perovskite
memristor
(Q-2DPM).
Q-2DPM
exhibits
competitive
performance
as
memory.
Multiple
synaptic
functions
have
been
successfully
simulated
on
Q-2DPM,
such
excitatory
postsynaptic
currents,
paired-pulse
facilitation,
long-term
potentiation/depression.
Furthermore,
neural
networks
using
synapses
high
accuracy
MNIST
image
classification
tasks.
Q-2DPM's
inherent
characteristics
suitable
reservoir
also
demonstrated
through
its
application
pulse-stream-based
digital
experiment,
showcasing
impressive
performance.
elucidation
dual
mechanisms
within
provides
fresh
insights
into
behavior
underscores
potential
achieving
units
single
device.
This
work
paves
way
implementation
physical
neuromorphic
hardware
architectures
advancement
sophisticated
primitives,
offering
significant
step
toward
next
generation
technologies.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(41)
Published: Aug. 15, 2024
Abstract
The
p‐
or
n‐type
property
of
semiconductor
materials
directly
determine
the
final
performance
photoelectronic
devices.
Generally,
perovskite
deposited
on
p‐type
substrate
tends
to
be
p‐type,
while
n‐type.
Motived
by
this,
a
substrate‐induced
re‐growth
strategy
is
reported
induce
n‐transition
surface
in
inverted
solar
cells
(PSCs).
film
obtained
and
crystallized
first.
Then
an
ITO/SnO
2
with
saturated
solution
pressed
onto
annealed
secondary
region.
As
result,
transition
happens
induces
extra
junction
at
region,
thus
enhancing
built‐in
potential
promoting
carrier
extraction
PSCs.
Resulting
PSCs
exhibit
high
efficiency
over
25%
good
operational
stability,
retaining
90%
initial
after
maximum
power
point
(MPP)
tracking
for
800
h
65
°C
ISOS‐L‐2
protocol.