Nanomaterials,
Journal Year:
2025,
Volume and Issue:
15(11), P. 863 - 863
Published: June 4, 2025
More
than
70%
of
the
information
humans
acquire
from
external
environment
is
derived
through
visual
system,
where
photosensitive
function
plays
a
pivotal
role
in
biological
perception
system.
With
rapid
development
artificial
intelligence
and
robotics
technology,
achieving
human-like
has
attracted
great
amount
attention.
The
neuromorphic
system
provides
novel
solution
for
efficient
low-power
processing
by
simulating
working
principle
In
recent
years,
ferroelectric
materials
have
shown
broad
application
prospects
field
due
to
their
unique
spontaneous
polarization
characteristics
non-volatile
response
behavior
under
regulation.
Especially
tunable
retinal
neural
synapses,
storage
processing,
constructing
dynamic
sensing,
performance
advantages.
this
review,
progress
based
on
discussed,
elaborating
detail
device
structure,
material
systems,
applications,
exploring
potential
future
trends
challenges
faced
field.
ACS Nano,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Sept. 26, 2024
Increasing
the
demand
for
object
motion
detection
(OMD)
requires
shifts
of
reducing
redundancy,
heightened
power
efficiency,
and
precise
programming
capabilities
to
ensure
consistency
accuracy.
Drawing
inspiration
from
motion-sensitive
ganglion
cells,
we
propose
an
OMD
vision
sensor
with
a
simple
device
structure
WSe
The Journal of Physical Chemistry Letters,
Journal Year:
2024,
Volume and Issue:
15(34), P. 8845 - 8852
Published: Aug. 21, 2024
The
development
of
neuromorphic
hardware
capable
detecting
and
recognizing
moving
targets
through
an
in-sensor
computing
strategy
is
considered
to
be
important
component
the
construction
edge
systems
with
distributed
computation.
In
addition
responsiveness
visible
light,
implementation
should
also
demonstrate
ability
sense
process
nonvisible
which
essential
for
tracking
target
object
trajectories
in
specialized
environments.
this
work,
we
fabricated
organic
synaptic
transistor
a
near-infrared
(NIR)
response
by
incorporating
doped
LaF3:
Yb/Ho
upconversion
quantum
dots
(UCQDs)
into
channel
Poly3-hexylthiophene
(P3HT)-based
field
effect
(FET),
serving
as
charge
trapping
infrared
sensing
sites.
obtained
not
only
replicates
common
behaviors
when
exposed
NIR
illumination
but
demonstrates
potential
applications
dynamic
trajectory
recognition
animals
dark.
Compared
other
monitoring
technologies,
P3HT
transistors
UCQDs
exhibit
distinct
advantages,
including
response,
high-efficiency
computing,
sensitivity,
provide
experimental
foundation
design
reference
next-generation
intelligent
image
systems.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 24, 2024
Abstract
Ferroelectric
materials
commonly
serve
as
gate
insulators
in
typical
field‐effect
transistors,
where
their
polarization
reversal
enables
effective
modulation
of
the
conductivity
state
channel
material,
thereby
realizing
non‐volatile
memory.
Currently,
novel
2D
ferroelectrics
unlock
new
prospects
next‐generation
electronics
and
neuromorphic
computation.
However,
advancement
these
is
impeded
by
limited
selectivity
narrow
memory
windows.
Here,
concepts
ferroelectric
perovskite/MoS
2
heterostructures
transistors
are
presented,
which
perovskite
features
customizable
band
structure,
few‐layered
ferroelectricity,
submillimeter‐size
monolayer
wafers.
Further
studies
reveal
that
devices
exhibit
unique
charge
polarity
(from
n
‐
to
p
‐type
channel)
remarkable
nonvolatile
behavior,
especially
record‐wide
hysteresis
windows
up
177
V,
efficient
imitation
biological
synapses
achieves
high
recognition
accuracy
for
electrocardiogram
patterns.
This
result
provides
a
device
paradigm
future
artificial
synaptic
applications.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
34(34)
Published: June 27, 2024
Abstract
Ferroelectric
tunnel
junctions
(FTJs)
have
gained
substantial
attention
as
emerging
electronic
devices
such
nonvolatile
memory
and
artificial
synapse,
owing
to
their
low
power
consumption
properties.
In
this
work,
a
2D
semiconductor
(2DS)/α‐In
2
Se
3
/metal
FTJ
structure
is
proposed
that
combines
ferroelectric
material
semiconducting
electrode.
The
incorporation
of
2DS
not
only
enhances
the
barrier
height
modulation
but
also
provides
an
effective
approach
mitigate
thermionic
current
leakage.
Notably,
MoS
/α‐In
/Ti
FTJs
exhibit
both
room‐temperature
negative
differential
resistance
(NDR)
effect
high
electroresistance
(TER)
exceeding
10
4
simultaneously.
Furthermore,
versatility
extends
several
(including
,
PdSe
SnSe
)
graphene
electrodes
rationalize
tunneling
transport
mechanisms.
2DS/α‐In
present
great
superiority
over
existing
structures
in
terms
robustness,
temperature
independence,
TER,
for
various
potential
application
scenarios.
ACS Photonics,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 7, 2025
In-sensor
neuromorphic
computing
promises
to
operate
real-time
information
perception
and
processing
on
a
hardware
level
based
the
no-latency
state
adaptability.
Furthermore,
an
essentially
parallel
compute-in-memory
architecture
could
address
inherent
efficiency
limitation
of
conventional
von
Neumann
architecture,
resulting
from
redundant
data
transmission.
As
efficient
platform,
it
has
expanded
into
complex
bionic
interaction
application
field,
leading
new
possibilities
for
powerful
neural
network
implementation.
first
line
defense
against
any
potential
damage,
pain
sense
represents
alarm
triggered
by
external
noxious
stimuli
drives
some
nociceptive
reactions
avoid
risks.
Although
there
is
progress
in
devices
as
nociceptor-mediated
synaptic
analogs,
few
studies
obtain
clear
threshold
feature
fully
present
their
high-threshold
nature,
no
have
been
able
define
levels
(all
previous
works
only
one
jumping
represent
production
pain)
that
are
key
adaptive
system.
In
our
device
scheme,
tunneling
modes
were
used
switch
operating
modes,
where
changes
occur
following
photogating
field
scanning.
Besides,
we
easily
tune
properties
layer
via
its
thickness,
which
nociceptors
containing
different
produced.
Based
these,
not
systematically
mimicked
normal
synapse
but
also
displayed
features
level-I,
level-II,
level-III
specific
stimulation
patterns.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
37(2)
Published: Jan. 1, 2025
This
special
issue
spans
a
diverse
array
of
topics,
including
nanomedicine,
tissue
engineering,
regenerative
medicine,
organs-on-chips,
biosensing,
soft
robotics,
smart
devices,
nanofabrication,
energy
saving
and
storage,
catalysis,
spintronics,
electronics,
neuromorphic
computing.
It
showcases
the
breadth
depth
advanced
materials
research
at
Chinese
University
Hong
Kong
(CUHK),
highlighting
innovation,
collaboration,
excellence
CUHK's
scientists.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 23, 2025
Abstract
Utilizing
the
correlation
among
diverse
physical
properties
to
facilitate
multiplexing
and
multistate
memory
is
anticipated
emerge
as
an
efficient
strategy
enhance
capacity,
achieve
device
miniaturization,
ensure
information
security.
As
important
functional
material,
ferroelectrics
have
long
been
considered
a
potential
candidate
in
devices.
Furthermore,
integration
of
optical
response
offers
alternative
path
realizing
features,
further
enhancing
versatility
efficiency
these
However,
combining
ferroelectricity
activity
always
challenging
because
very
sensitive
crystal
structure.
In
this
study,
on
between
ferroelectric
polarization
(FP)
molecular
trimethylchloromethyl
ammonium
trichloromanganese
(TMCM‐MnCl
3
)
reported.
This
research
demonstrated
that
FP
can
modulate
photoluminescence
(PL)
emission,
while
illumination
trigger
reversal.
Based
these,
both
electric‐writing
optical‐reading
(EWOR)
optical‐writing
electrical‐reading
(OWER)
modes
conclusively
established,
seamless
transition
two
be
achieved
by
adjusting
excitation
light
intensity.
These
findings
reveal
intriguing
interconnection
imply
viability
implementing
functionalities
systems
based
ferroelectrics.
Advanced Materials Technologies,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 2, 2025
Abstract
Sliding
ferroelectricity,
a
novel
type
of
is
discovered
in
some
van
der
Waals
materials,
where
polarization
switching
can
be
achieved
through
in‐plane
interlayer
sliding.
The
ferroelectric
involves
atomic
displacements
during
the
process,
which
makes
sliding
materials
advantageous
terms
high
speed,
low
barriers,
and
fatigue
resistance
contrast
to
conventional
bulk
materials.
specific
mechanism
creates
an
opportunity
for
exploring
numerous
practical
applications
such
as
high‐speed
storage,
photovoltaic
effect,
neuromorphic
computing.
In
this
review,
recently
emerging
are
aimed
summarize
prospect
future
developing
tendency
First,
mechanisms
typical
characterization
methods
briefly
introduced.
Second,
recent
progress
summarized
including
field‐effect
transistors,
tunneling
junction,
memristor,
multi‐bit
superconductivity,
random‐access
memory,
ultra‐fast
optical
response,
effect.
Finally,
outlook
on
potential
provided
offer
insight
into
current
challenges
further
development
advanced
optoelectronic
devices
based
ferroelectricity.
