Cs2AgBiBr6 Double Perovskite Single Crystal/ CsPbBr3 Perovskite Nanocrystals Heterojunction for High‐Performance X‐Ray Detection DOI Creative Commons
Joydip Ghosh, Naveen Kumar Tailor, Koushik Ghosh

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 26, 2024

Abstract In this study, the investigation of a Cs 2 AgBiBr 6 single crystal (SC) / CsPbBr 3 nanocrystals (NCs) film double perovskite/perovskite type‐II novel heterojunction tailored for superior X‐ray detection applications is presented. One main benefits utilizing such its built‐in electric potential, which improves charge transport and reduces dark current in devices. By casting NCs onto polished SC, /CsPbBr perovskite/ perovskite fabricated. The detector exhibits reduced increased photocurrent compared to pristine SC device. This enhancement can be attributed efficient carrier generation separation facilitated by appropriate band bending at interface. device shows an sensitivity µCGy −1 cm −2 0 V applied bias, owing potential across heterojunction. Remarkably, −50 reached 857.8 , with limit 312 nGy s . Density functional theory (DFT) calculations provided further insights, revealing electron transfer from thereby enhancing These findings underscore heterojunctions optoelectronic applications.

Language: Английский

A review of interface engineering characteristics for high performance perovskite solar cells DOI Creative Commons
George G. Njema, Joshua K. Kibet,

Silas M. Ngari

et al.

Deleted Journal, Journal Year: 2024, Volume and Issue: 2, P. 100005 - 100005

Published: April 25, 2024

Language: Английский

Citations

15

Exploring Nanoscale Perovskite Materials for Next-Generation Photodetectors: A Comprehensive Review and Future Directions DOI Creative Commons
Xin Li,

Sikandar Aftab,

Maria Mukhtar

et al.

Nano-Micro Letters, Journal Year: 2024, Volume and Issue: 17(1)

Published: Sept. 30, 2024

Abstract The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications. These are promising candidates next-generation photodetectors (PDs) due to their unique optoelectronic properties and flexible synthesis routes. This review explores the approaches used development use devices made different architectures, including quantum dots, nanosheets, nanorods, nanowires, nanocrystals. Through a thorough analysis recent literature, also addresses common issues like mechanisms underlying degradation PDs offers perspectives on potential solutions improve stability scalability that impede widespread implementation. In addition, it highlights encompasses detection light fields dimensions other than intensity suggests avenues future research overcome these obstacles fully realize state-of-the-art systems. provides comprehensive overview guides efforts towards improved performance wider applicability, making valuable resource researchers.

Language: Английский

Citations

10

Element Regulation and Dimensional Engineering Co-Optimization of Perovskite Memristors for Synaptic Plasticity Applications DOI
Yucheng Wang, Dingyun Guo,

Junyu Jiang

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(10), P. 12277 - 12288

Published: Feb. 29, 2024

Capitalizing on rapid carrier migration characteristics and outstanding photoelectric conversion performance, halide perovskite memristors demonstrate an exceptional resistive switching performance. However, they have consistently faced constraints due to material stability issues. This study systematically employs elemental modulation dimension engineering effectively control with different dimensions A-site elements. Compared pure 3D 2D perovskites, the quasi-2D memristor, specifically BA0.15MA0.85PbI3, is identified as optimal choice through observations of (HRS current < 10–5 A, ON/OFF ratio > 103, endurance cycles 1000, retention time 104 s) synaptic plasticity characteristics. Subsequently, a comprehensive investigation into various aspects, including paired-pulse facilitation (PPF), spike-variability-dependent (SVDP), spike-rate-dependent (SRDP), spike-timing-dependent (STDP), conducted. Practical applications, such memory–forgetting–memory recognition Modified National Institute Standards Technology (MNIST) database handwritten data set (accuracy rate reaching 94.8%), are explored successfully realized. article provides good theoretical guidance for synaptic-like simulation in memristors.

Language: Английский

Citations

7

Surfactant-Dependent Bulk Scale Mechanochemical Synthesis of CsPbBr3 Nanocrystals for Plastic Scintillator-Based X-ray Imaging DOI Creative Commons
Joydip Ghosh, J. O’Neill, Mateus G. Masteghin

et al.

ACS Applied Nano Materials, Journal Year: 2023, Volume and Issue: 6(16), P. 14980 - 14990

Published: Aug. 7, 2023

We report a facile, solvent-free surfactant-dependent mechanochemical synthesis of highly luminescent CsPbBr3 nanocrystals (NCs) and study their scintillation properties. A small amount surfactant oleylamine (OAM) plays an important role in the two-step ball milling method to control size emission properties NCs. The solid-state synthesized perovskite NCs exhibit high photoluminescence quantum yield (PLQY) up 88% with excellent stability. capped different amounts were dispersed toluene mixed polymethyl methacrylate (PMMA) polymer cast into scintillator discs. With increasing concentration OAM during synthesis, PL CsPbBr3/PMMA nanocomposite was increased, which is attributed reduced NC aggregation quenching. also varied loading studied resulting most intense observed from 2% perovskite-loaded disc, while 10% loaded disc exhibited highest radioluminescence (RL) 50 kV X-rays. strong RL may be deep penetration X-rays composite, combined large interaction cross-section high-Z atoms within shows peak centered at 536 nm fast decay time 29.4 ns. Further, we have demonstrated X-ray imaging performance NC-loaded disc.

Language: Английский

Citations

14

Two-dimensional complex metal halides: influence of restricted dimensionality on functional properties DOI Creative Commons
Charles Chen, Jianwei Xu,

Xi Zu Wang

et al.

Journal of Materials Chemistry A, Journal Year: 2024, Volume and Issue: 12(9), P. 5055 - 5079

Published: Jan. 1, 2024

We use the term “complex metal halides” to refer compounds such as halide perovskites. Our focus includes exploring various dimensionality types, with a specific emphasis on structurally 2D materials, including RP and DJ phases.

Language: Английский

Citations

4

Hot carrier dynamics in the BA2PbBr4/MoS2 heterostructure DOI
Sumaiya Parveen, Pratap Kumar Pal, Suchetana Mukhopadhyay

et al.

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

The hot phonon bottleneck in BA 2 PbBr 4 perovskite and MoS heterostructure extends electron relaxation, offering insights into interfacial coupling dynamics for efficient optoelectronics.

Language: Английский

Citations

0

Insights into unlocking the latent photocatalytic H2 production activity in the protonated Aurivillius-phase layered perovskite Na0.5Bi2.5Nb2O9 DOI
Arreerat Jiamprasertboon, Andreas Kafizas, Tanachat Eknapakul

et al.

Materials Research Bulletin, Journal Year: 2025, Volume and Issue: unknown, P. 113352 - 113352

Published: Feb. 1, 2025

Language: Английский

Citations

0

Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory DOI
H. S. Ahn,

Hyun Su Park,

Minseon Gu

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 20, 2025

Language: Английский

Citations

0

Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses DOI
Fu-Chiao Wu, Zhicheng Su, Yu‐Chieh Hsu

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101708 - 101708

Published: March 1, 2025

Language: Английский

Citations

0

Memristors Based on Ni(II)‐tetraaza[14]annulene Complexes: Toward an Unconventional Resistive Switching Mechanism DOI Creative Commons
Andrzej Sławek,

Lulu Alluhaibi,

Ewelina Kowalewska

et al.

Advanced Electronic Materials, Journal Year: 2024, Volume and Issue: 10(12)

Published: May 27, 2024

Abstract In this work, a family of Ni‐based dibenzotetraaza[14]annulene (dtaa) complexes are investigated for their application in memristors (memory resistors). A series four Ni(II) with different peripheral substituents the dtaa ligand successfully synthesized. Based on these compounds, two‐terminal thin‐film devices fabricated planar architecture. Four metals work functions tested: Mg, Cu, Ni, and Au. It is demonstrated that ITO|[Ni(Me 4 dtaa)]|Cu show hysteretic behavior offer stable, robust, reproducible switching between high‐ low‐resistive states. An in‐depth spectroscopic characterization Ni complex performed, using radiation from infrared, through visible ultraviolet, to tender X‐rays. Operando X‐ray fluorescence spectroscopy used monitor redox structural changes upon polarization studied memristor external electric field. Density functional theory calculations better understand electronic structure material, as well rearrangement after electron injection may be responsible modulation conductivity. Finding unique case filamentary‐type resistive involving reactions stationary molecules within molecular solid postulated. Yet, formation filaments not related any significant configurational at atomic scale.

Language: Английский

Citations

3