Liquid metal gallium-based printing of Cu-doped p-type Ga2O3 semiconductor and Ga2O3 homojunction diodes

Applied Physics Reviews, Journal Year: 2023, Volume and Issue: 10(1)

Published: Jan. 3, 2023

As a promising third-generation semiconductor, gallium oxide (Ga2O3) is currently facing bottleneck for its p-type doping. The doping process of conventional semiconductors usually introduces trace impurities, which major technical problem in the electronics industry. In this article, we conceived that complexity could be significantly alleviated, and high degree control over results attained using selective enrichment liquid metal interfaces harvesting doped semiconductor layers. An appropriate mechanism thus proposed to prepare semiconducting based on multicomponent alloys. Liquid alloys with certain Cu weight ratios bulk are utilized harvest Cu-doped Ga2O3 films, result conductivity. Then, field-effect transistors were integrated printed p n-type films demonstrated own excellent electrical properties stability. Au electrodes fabricated layers showed good Ohmic behavior. Furthermore, high-power diodes realized homojunction through combining van der Waals stacking transfer printing. diode exhibited efficiency at room temperature, involving rectification ratio 103 forward current density 10 V (J@10 V) 1.3 mA. This opens opportunity cost-effective creation controlled dopants. disclosed here suggests important strategies further synthesis manufacturing routes industries.

Language: Английский

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Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation

Advanced Functional Materials, Journal Year: 2023, Volume and Issue: 33(36)

Published: June 14, 2023

Abstract Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic light sensing provide an exciting platform for neuromorphic processing vision applications offering several advantages. It is highly desirable achieve single‐element image sensors that allow reception of information execution in‐memory computing processes while maintaining memory much longer durations without the need frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In 2 O 3 ) layers are engineered demonstrate a monolithic two‐terminal ultraviolet (UV) system with long state retention operating at 50 mV. This endows features conductance states within persistent photocurrent window harnessed show learning capabilities significantly reduce number The atomically thin sheets implemented as focal plane array (FPA) UV spectrum proof‐of‐concept capable pattern recognition memorization required imaging detection applications. integrated deployed illustrate real‐time, in‐sensor memorization, tasks. study provides important template engineer miniaturized low voltage platforms across on application demand.

Language: Английский

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Advances in Liquid Metal Printed 2D Oxide Electronics

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: June 10, 2024

Abstract 2D metal oxides (2DMOs) have recently emerged as a high‐performance class of ultrathin, wide bandgap materials offering exceptional electrical and optical properties for area device applications in energy, sensing, display technologies. Liquid printing represents thermodynamically advantageous strategy synthesizing 2DMOs by solvent‐free vacuum‐free scalable method. Here, recent progress the field liquid printed is reviewed, considering how physics Cabrera‐Mott oxidation gives this rapid, low‐temperature process advantages over alternatives such sol‐gel nanoparticle processing. The growth, composition, crystallinity burgeoning set 1–3 nm thick semiconducting, conducting, dielectric are analyzed that uniquely suited fabrication flexible electronics. limitations these strategies considered, highlighting opportunities to amplify impact 2DMO through large‐area printing, design doped alloys, stacking electrostatically engineer new oxide heterostructures, implementation devices gas photodetection, neuromorphic computing.

Language: Английский

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2‐nm‐Thick Indium Oxide Featuring High Mobility

Advanced Materials Interfaces, Journal Year: 2023, Volume and Issue: 10(9)

Published: Feb. 25, 2023

Abstract Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push wider exploration semiconducting materials cost‐effective synthesis processes. In this report, simple approach is proposed to achieve 2‐nm‐thick indium oxide nanosheets from liquid metal surfaces by employing squeeze printing technique thermal annealing at 250 °C air. The exhibit high degree transparency (>99 %) an excellent electron mobility ≈96 cm 2 V −1 s , surpassing that pristine printed 2D O 3 many other reported semiconductors. UV‐detectors based on annealed also benefit process step, with photoresponsivity reaching 5.2 × 10 4 9.4 A W wavelengths 285 365 nm, respectively. These values order magnitude higher than as‐synthesized . Utilizing transmission microscopy situ annealing, it demonstrated improvement device performances due nanostructural changes within layers during process. This work highlights facile ambient air compatible method fabricating high‐quality oxides, which will find application emerging transparent electronics optoelectronics.

Language: Английский

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A toolbox for investigating liquid metal systems

Cell Reports Physical Science, Journal Year: 2024, Volume and Issue: 5(2), P. 101820 - 101820

Published: Feb. 1, 2024

The exceptional properties of liquid metals at room temperature, such as their fluidity, stretchability, deformability, and potential applications, have rapidly inspired the scientific community. At present, main challenge is overcoming technical barriers associated with characterization metal systems, which resulted in molecular structure remaining effectively unknown. This lack knowledge has significantly hampered progress emerging field chemistry, prohibiting tailored design relegating researchers to work by trial error. In recent years, several technological developments, including improved analytical tools, emerged that tackle current challenges. this review, we present a comprehensive appraisal various state-of-the-art techniques can help uncover answers long-standing questions domain metal-in-metal colloidal systems. We describe selected generic methodologies unique approaches capture changes physical chemical behavior molten presence internal external stimuli. combination, outlined tools will deepen our understanding chemistry accelerate research translation provide solutions areas catalysis, biomedicine, reconfigurable electronics.

Language: Английский

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Heterojunction Transistors Printed via Instantaneous Oxidation of Liquid Metals

Nano Letters, Journal Year: 2023, Volume and Issue: 23(7), P. 2544 - 2550

Published: March 15, 2023

Semiconducting transparent metal oxides are critical high mobility materials for flexible optoelectronic devices such as displays. We introduce the continuous liquid printing (CLMP) technique to enable rapid roll-to-roll compatible deposition of semiconducting two-dimensional (2D) oxide heterostructures. leverage CLMP deposit 10 cm2-scale nanosheets InOx and GaOx in seconds at a low process temperature (T < 200 °C) air, fabricating heterojunction thin film transistors with 100× greater Ion/Ioff, 4× steeper subthreshold slope, 50% increase over pure channels. Detailed nanoscale characterization heterointerface by X-ray photoelectron spectroscopy, UV-vis, Kelvin probe elucidates origins enhanced electronic transport these 2D heterojunctions. This combination electrostatic control induced heterostructure architecture leads performance (μlin up 22.6 cm2/(V s)) while reducing time than compared sol-gels vacuum methods.

Language: Английский

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Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(11)

Published: Feb. 13, 2024

Abstract Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with spin polarization Wis synthesized, assembled graphene p‐Si, realizing UV‒vis‒NIR photodetection. Extended X‐ray fine structure reveals that a‐GaO x NSs possess lower tetrahedral Ga occupation (10%) compared crystalline β‐Ga 2 O 3 (50%). diffuse reflectance spectra magnetic hysteresis loops demonstrate weak ferromagnetism of NSs, respectively. Density functional theory calculation further sub‐gap states in NSs. Moreover, combined Mott–Schottky curves, photoluminescence time‐resolved inferred the effective suppression recombination via The graphene/a‐GaO NSs/p‐Si photodetector incorporates a back‐to‐back rectifying junction, acquiring dark current as low 63 pA. All photogenerated carriers are depletion region favouring efficient charge separation. This exhibits response time τ rise <60 ms fall <120 ms, specific detectivity 10 13 Jones over 254–1064 nm light.

Language: Английский

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Gas sensors based on the oxide skin of liquid indium

Nanoscale, Journal Year: 2023, Volume and Issue: 15(10), P. 4972 - 4981

Published: Jan. 1, 2023

Various non-stratified two-dimensional (2D) materials can be obtained from liquid metal surfaces that are not naturally accessible. Homogenous nucleation on atomically flat interfaces of metals with air produces unprecedented high-quality oxide layers transferred onto desired substrates. The and large areas provide surface-to-volume ratios ideal for sensing applications. Versatile crucial applications the metal-derived 2D oxides have been realized; however, their gas-sensing properties remain largely underexplored. cubic In2O3 structure, which is nonlayered, formed as an ultrathin layer surface indium during self-limiting Cabrera-Mott oxidation process in air. morphology, crystal band structure harvested nanosheets characterized. Sensing capability toward several gases, both inorganic organic, entailing NO2, O2, NH3, H2, H2S, CO, Methyl ethyl ketone (MEK) explored. A high ohmic resistance change 1974% at 10 ppm, fast response, recovery times observed NO2 optimum temperature 200 °C. fundamentals investigated its performances cross-selectivity to different gases analyzed. response room 300 °C has measured discussed, stability after 24 hours continuous operation presented. results demonstrate promising gas

Language: Английский

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Sub-nm kinetically controlled liquid metal printing of ternary antimony indium oxide transistors

Matter, Journal Year: 2025, Volume and Issue: unknown, P. 102003 - 102003

Published: Feb. 1, 2025

Language: Английский

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High‐Entropy Liquid Metal Process for Transparent Ultrathin p‐Type Gallium Oxide

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 12, 2025

Abstract The naturally self‐limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This layer with a thickness few nanometers is typically highly transparent engineered for applications in large‐area optoelectronics. While incorporation solvated elements into interfacial post‐transition metal‐based demonstrated n ‐doping, achieving p ‐doping such ultrathin layers remains significant challenge. In this study, use dissolved indium (In), platinum (Pt), gold (Au), palladium (Pd), copper (Cu) gallium (Ga)‐based alloys investigated to create high‐entropy metal system. allows exfoliation p‐ doped layer, predominantly composed (Ga 2 O 3 ). these system results their atomic dispersion, Cu exhibiting limited presence. atomically dispersed Pt, Au, Pd scavenge oxygen during at moderate temperatures release them cooling down, promoting emergence trivalent metallic Ga layer. work presents novel doping strategy achieve ‐doped liquid‐metal‐derived layers, which maintain high transparency.

Language: Английский

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