From synthesis to application: a review of BaZrS₃ chalcogenide perovskites

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Chalcogenide perovskites are gaining prominence as earth-abundant and non-toxic solar absorber materials, crystallizing in a distorted perovskite structure. Among these, BaZrS3 has attracted the most attention due to its optimal bandgap ability be synthesized at relatively low temperatures. exhibits high light absorption coefficient, excellent stability under exposure air, moisture, heat, is composed of elements. These properties collectively position promising candidate for wide range applications, although traditional high-temperature synthesis primarily been significant challenge. In this review, we provide critical discussion various methods employed fabricate BaZrS3, including solid-state synthesis, nanoparticle vacuum-based well solution-based approaches synthesize thin films. We also comprehensively examine experimentally measured theoretically calculated optical, optoelectronic, electronic, defect BaZrS3. Furthermore, review highlights functional devices based on showcasing applications spanning photovoltaics, photodetection, thermoelectrics, photoelectrochemical water splitting, piezoelectricity, spintronics. Lastly, propose future roadmap maximize potential material. Additionally, extends focus BaHfS3 BaTiS3, discussing their methods, properties, explored thereby offering comparative perspective emerging family chalcogenide perovskites.

Language: Английский

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Lanthanide Ion‐Doped Perovskite Nanocrystals in Electroluminescent Device

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(36)

Published: April 10, 2024

Abstract Lanthanide ions doped in perovskite (LIDP) nanocrystals (NCs) provide an effective way to utilize the emission of lanthanide metals a solution‐processable way, combining theoretical photoluminance quantum yield (PLQY) ≈200%. To advantages, LIDP‐NCs have inspired studies exploring fundamental physics energy transfer, including up‐conversion or down‐conversion process, and optoelectronic applications solar cells white light‐emitting didoes. This review broadens scope LIDP nanocrystal matrix semiconductors electroluminescence devices near‐infrared (NIR) range (>900 nm). A research is summarized on synergistic effect region, discuss from perspective fabrication lanthanide‐based electroluminescent using materials as matrix. The multiple optical transitions, bandgap tunability, quantum‐cutting tutorial understanding are started. details synthesizing aim lay foundation for preparing NIR with high efficiency application value then illustrated. scientific issues that limit performance NCs‐based potential strategies future development material focused on.

Language: Английский

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Advances in chalcogenide perovskites: Fundamentals and applications

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(2)

Published: June 1, 2024

Chalcogenide perovskites are a family of compounds related to perovskite structures or compositions, which have witnessed rapid advances in recent years. They possess favorable properties such as high stability, low toxicity, direct band gaps, good carrier transport abilities, strong light absorption, and potential luminescent properties, making them stand out emerging applications, photovoltaics, photodetectors, light-emitting devices, photocatalysts, among others. In this review, we aim provide comprehensive overview the synthesis, applications chalcogenide perovskites. First, first survey reported material structures/compositions current understanding their structural/optical/electrical mechanics, magnetics, stabilities. Furthermore, discuss synthesis strategies these materials covering various types powders, pellets, thin films, nanocrystals, single crystals, with focus on including other devices. Finally, outline brief conclusion some prospects for further research perovskites, thus promoting more studies developments field. This review can new insights into fundamental thereby facilitating developments.

Language: Английский

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Preparation of chalcogenide perovskite SrHfS3 and luminescent SrHfS3:Eu2+ thin films

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 124(13)

Published: March 25, 2024

As an emerging family of perovskites with S or Se anions, chalcogenide possess excellent optoelectronic properties that are comparable halide perovskites, e.g., efficient carrier transport abilities and defect tolerance. Moreover, they thermodynamically stable constituted by eco-friendly elements. Among them, perovskite SrHfS3 is found to be a promising light emitting material experimentally demonstrated suitable host for the luminescent lanthanide ions like Eu2+. In order applied in practical devices, preparation thin film critical step. Unfortunately, there few reports on growth films, hindering knowledge their applications. this work, films prepared magnetron sputtering from commercial SrHfO3 target subsequent sulfurization. Then, Eu2+ doping achieved co-sputtering home-made EuS target. The exhibit high-quality crystallinity, smooth morphology, high p-type mobility. With strategy, SrHfS3:Eu2+ show intensive red light, which sets foundations further application devices.

Language: Английский

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Scrutinizing the untapped potential of emerging ABSe3 (A = Ca, Ba; B = Zr, Hf) chalcogenide perovskites solar cells

Scientific Reports, Journal Year: 2025, Volume and Issue: 15(1)

Published: Jan. 27, 2025

Abstract ABS 3 chalcogenide perovskites (CPs) are emerging as promising alternatives to lead halide due their unique properties. However, bandgap exceeds the Shockley-Queisser limit. By substituting S with Se, is significantly reduced, shifting it from visible into near-infrared region. Hence, we have investigated potential of Se-based absorbers device structure FTO/TiO 2 /ABSe (A = Ca, Ba; B Zr, Hf)/NiO/Au using SCAPS-1D. We analyzed critical parameters impacting each layer solar cell. Notably, achieved an enhanced light absorption (~ 26.5%) at optimal absorber thickness (500 nm), intensifying carrier generation. Additionally, observed increase in V OC (1.03 V) improved quasi-Fermi level splitting and a reduction energy loss (0.45 across all cells concentration (10 16 cm −3 ). Overall, optimization resulted improvements PCE by difference 20.14%, 20.44%, 14.33%, 14.56% for CaZrSe , BaZrSe CaHfSe BaHfSe cells, respectively. The maximum over 30% was attained both attributed narrow bandgap, (53.60%), high J SC (29 mA/cm ), elevated generation rate 1.19 × 10 22 −2 s −1 . Thus, these significant outcomes highlight fabricating high-efficiency CP cells.

Language: Английский

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Chalcogenide perovskite EuHfS3 with low band gap and antiferromagnetic properties for photovoltaics

Energy Material Advances, Journal Year: 2024, Volume and Issue: 5

Published: Jan. 1, 2024

Chalcogenide perovskites represent a promising class of materials known for their robust stability, environmentally friendly composition, and intriguing optoelectronic characteristics. Their A-site cation is largely dependent on nonmagnetic Ca, Sr, Ba elements, showing little influences the properties chalcogenide perovskites. Here, by introducing magnetic element Eu as cation, we present comprehensive investigation into crystal structures, band characteristics, features, behaviors EuHfS 3 , targeting photovoltaics. adopts distorted perovskite structure within Pnma space group. This allows various configurations, setting foundations multiple photovoltaic effect. The conduction maximum primarily originates from Hf 5 d orbitals, akin to SrHfS . Intriguingly, presence spin-up 4 f orbitals lifts covalence minimum, consequently narrowing gap (1.6 eV), which suitable absorber layer in p-i-n junction solar cells. Moreover, zero field cooled magnetization measurements reveal antiferromagnetic behavior indicating further spin integration perovskites, conjunction with inherent semiconducting attributes, holds promise future advancements photovoltaics other spintronic device technologies.

Language: Английский

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Expanding the horizons for viable precursors and liquid fluxes for the synthesis of BaZrS₃ and related compounds

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: 12(32), P. 12521 - 12534

Published: Jan. 1, 2024

This study explores the moderate-temperature synthesis of BaMS 3 (M = Ti, Zr, Hf) chalcogenide perovskites utilizing metal chlorides and precursors introduces a novel selenium liquid flux.

Language: Английский

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Band structure modulation of chalcogenide perovskite with Eu as A-site cation

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(8)

Published: Feb. 1, 2025

Chalcogenide perovskites with distorted structures, such as BaZrS3 and SrZrS3, are promising photovoltaic materials due to their high stability, strong absorption, excellent electrical transport properties. Researchers have explored BaZr1-xTixS3 BaZrS3-xSex alloys reduce band gaps, allowing them absorb lower-energy photons. However, the hexagonal structures of BaTiS3 BaZrSe3, along incompatibility Ti or Se atoms in BaZrS3, lead phase separation these alloys. In this work, using EuZrS3 Sr0.7Eu0.3ZrS3 examples, we demonstrate that structure chalcogenide can be tuned by Eu A-site cation. EuZrS3, 4f orbitals contribute valence maximum, thereby raising resulting a narrow bandgap 0.54 eV. Furthermore, structural atomic compatibility Sr1-xEuxZrS3 alloy is designed fine-tune both SrZrS3 EuZrS3. also exhibits typical semiconducting characteristics, making it for potential optoelectronic devices.

Language: Английский

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Integration of Photo‐ and Thermal‐Detection Based on Hexagonal Chalcogenide Perovskite Sr₈Ti₇S₂₁ with Full Spectrum Absorption

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 21, 2025

Abstract Chalcogenide perovskites, such as BaZrS 3 , with a distorted 3D orthorhombic structure, have been extensively studied absorber materials in solar cells due to their strong thermal stability, excellent electrical transport properties, and high absorption. However, the relatively bandgap of chalcogenide perovskites limits application near‐infrared region. In this work, it is demonstrated that Sr 8 Ti 7 S 21 perovskite quasi‐1D hexagonal exhibits significantly lower broader absorption spectrum extending into infrared various forms are synthesized, including powder, bulk, thick, thin film. Using these materials, thermistor photo‐thermoelectric generator fabricated. The B 30/90 value 2400 K, comparable commercial negative temperature coefficient (NTC) thermistors. efficiently absorbs both visible light, making suitable for operation under natural sunlight. Additionally, fire alarm system based on photo‐thermal sensing capabilities developed. characterization diverse applications presented work highlight potential low‐dimensional use photo‐ thermal‐detection devices.

Language: Английский

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Emissive Chalcogenide Perovskite Nanowires

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Efficient and stable one-dimensional semiconductor nanowires are critical for the development of next-generation on-chip optoelectronics. Here, we report a synthetic approach to produce high-quality based on chalcogenide perovskite via vapor phase reaction inside sealed ampule. An epitaxial vapor-phase growth mechanism is proposed. The shown be single crystalline highly structurally stable, with preferential along [010] direction. Red green photoluminescence (PL) observed from BaZrS3 SrHfS3 nanowires, respectively, emission tunable varying compositions. PL lifetime measured by fitting decay curve biexponential model. longer radiative recombination component time scale nanoseconds, indicating good nanowire sample quality promising potential optoelectronic applications.

Language: Английский

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