Ultrahigh‐Power Germanium Photodetector Enabling Amplifier‐Free Wireless Communication DOI

Zuhang Li,

Yang Shi,

Mingjie Zou

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 22, 2024

Abstract Photodetector (PD), an indispensable component in radio‐over‐fiber (RoF) systems, functions as interface between the optical fiber backbone and wireless radio branches. The power‐handling capability is paramount to determine both coverage linearity of RoF link, it predominantly constrained by space‐charge effect that limits output photocurrent. Consequently, electronic power amplifiers are required ensure reliable for end‐users, albeit at expense degraded signal linearity, increased energy consumption, bulky system. On other hand, increasing demand co‐integration with silicon microelectronics indicates CMOS‐compatible germanium‐silicon (Ge─Si) PDs hold significant promise. Herein, ultrahigh‐power Ge─Si PD designed implemented unprecedented high saturation photocurrent 471.4 mA a responsivity 1.12 A W −1 . remarkable high‐power performance achieved through enhancing absorption promoting photo‐generated carrier transit comprehensively. For proof‐of‐concept demonstration, amplifier‐free communication driven proposed PD, enabling range‐capacity product 20 m·Gb s , third‐order intermodulation 32.3 dBm 5 GHz, along real‐time video stream transmission. This work exhibits promising solution on‐chip photodetection, represents advancement toward high‐quality fiber‐wireless access network.

Language: Английский

Ligand‐Triggered MXenes Quantum Dots with Tunable Work Function as Anode and Cathode Interlayers for Organic Solar Cells DOI
Tao Li, Guoqiang Liu, Guoying Yao

et al.

Solar RRL, Journal Year: 2024, Volume and Issue: 8(13)

Published: June 5, 2024

The interfacial layers of organic optoelectronic devices generally suffer from the problems difficulty in regulating work function (WF) and low mobility, which are prone to mismatch energy levels loss carrier transport energy. Herein, O‐terminated NH 2 ‐terminated Ti 3 C T x MXenes quantum dots (MQDs) synthesized develop efficient O‐MQD hole transfer layer (HTL) E‐MQD electron (ETL) for solar cells (OSCs) photodetectors (OPDs). It is found that strong electronic coupling interaction between surface terminations matrices enables with tunable WF satisfactory conductivity. Consequently, a binary D18:L8‐BO system, power conversion efficiencies OSC device based on HTL ETL 18.62% 18.15%, respectively. Moreover, OPDs exhibit higher shot‐noise‐limited detectivity ( D shot *) 1.24 × 10 13 1.10 Jones, respectively, compared using classic interlayers. These findings provide some insights into design advanced dual‐function interlayers devices.

Language: Английский

Citations

2
Ultrahigh‐Power Germanium Photodetector Enabling Amplifier‐Free Wireless Communication DOI

Zuhang Li,

Yang Shi,

Mingjie Zou

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 22, 2024

Abstract Photodetector (PD), an indispensable component in radio‐over‐fiber (RoF) systems, functions as interface between the optical fiber backbone and wireless radio branches. The power‐handling capability is paramount to determine both coverage linearity of RoF link, it predominantly constrained by space‐charge effect that limits output photocurrent. Consequently, electronic power amplifiers are required ensure reliable for end‐users, albeit at expense degraded signal linearity, increased energy consumption, bulky system. On other hand, increasing demand co‐integration with silicon microelectronics indicates CMOS‐compatible germanium‐silicon (Ge─Si) PDs hold significant promise. Herein, ultrahigh‐power Ge─Si PD designed implemented unprecedented high saturation photocurrent 471.4 mA a responsivity 1.12 A W −1 . remarkable high‐power performance achieved through enhancing absorption promoting photo‐generated carrier transit comprehensively. For proof‐of‐concept demonstration, amplifier‐free communication driven proposed PD, enabling range‐capacity product 20 m·Gb s , third‐order intermodulation 32.3 dBm 5 GHz, along real‐time video stream transmission. This work exhibits promising solution on‐chip photodetection, represents advancement toward high‐quality fiber‐wireless access network.

Language: Английский

Citations

0