Ferro-ionic states and domains morphology in HfxZr1−xO2 nanoparticles

Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(3)

Published: Jan. 15, 2025

Unique polar properties of nanoscale hafnia-zirconia oxides (HfxZr1−xO2) are great interest for condensed matter physics, nanophysics, and advanced applications. These connected (at least partially) to the ionic–electronic electrochemical phenomena at surface, interfaces, and/or internal grain boundaries. Here, we calculated phase diagrams, dielectric permittivity, spontaneous polar, antipolar ordering, as well domain structure morphology in HfxZr1−xO2 nanoparticles covered by charge originating from surface adsorption. We revealed that ferro-ionic coupling supports long-range order HfxZr1−xO2, induces, enlarges stability region labyrinthine domains toward smaller sizes environmental constant low concentrations ions. The causes transition single-domain state high predict states, being multiple-degenerated, may significantly affect emergence negative differential capacitance nanograined/nanocrystalline films.

Language: Английский

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Electrical contact between 2D material NbS2 and WSSe

Physica E Low-dimensional Systems and Nanostructures, Journal Year: 2025, Volume and Issue: unknown, P. 116179 - 116179

Published: Jan. 1, 2025

Language: Английский

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Pathways for electron device research in the AI era

Device, Journal Year: 2025, Volume and Issue: 3(1), P. 100656 - 100656

Published: Jan. 1, 2025

Language: Английский

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Two-Dimensional Weyl Material-Based Negative Quantum Capacitance Effect for a Steep-Slope Hysteresis-Free Switching Device

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: April 30, 2025

The emergence of Weyl physics and associated materials offers promising pathways to circumvent the fundamental limitation imposed by Boltzmann tyranny, a thermionic constraint governing subthreshold slope that currently prevents further reduction operating voltages overall power dissipation in field-effect transistors (FETs) related devices. In this work, an ultrathin material, WTe2, is utilized as floating gate achieve steep (SS) hysteresis-free based on negative quantum capacitance (NQC) effect induced nodes. This device exhibits excellent performance electrical characteristics, with minimum SS 20.3 mV/dec ultrasmall hysteresis ∼2.6 mV. addition, optimal area ratio between WTe2 channel (MoS2) found be 1:1, circumstance, peak can observed capacitance-voltage curve, suggesting existence NQC effect. proposed originate from enhancement electron correlation Fermi level tuned approach nodes, which presents low carrier density state. work benefits design high integration density, energy-saving devices provides possible method optimizing traditional introducing physics.

Language: Английский

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Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors

Advanced Electronic Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 22, 2024

Abstract Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered a 2D‐semiconductor are promising candidates for controllable reduction dielectric layer capacitance due to negative (NC) effect emerging in films. The NC state is conditioned energy‐degenerated poly‐domain states ferrielectric polarization induced under incomplete screening conditions presence layer. Calculations performed FET‐type heterostructure “ferrielectric CuInP 2 S 6 film—2D‐MoS single‐layer—SiO layer” reveal pronounced size multilayer capacitance. Derived analytical expressions electric and allow predict thickness range film which most various ferrielectrics, corresponding subthreshold swing becomes much less than Boltzmann's limit. Obtained results can be useful temperature control steep‐slope FETs.

Language: Английский

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Prospects of Band Structure Engineering in MXenes for Active Switching MXetronics: Computational Insights and Experimental Approaches

Materials, Journal Year: 2024, Volume and Issue: 18(1), P. 104 - 104

Published: Dec. 30, 2024

MXenes, two-dimensional (2D) transition metal carbides and nitrides, have shown promise in a variety of applications. The use MXenes active electronic devices is restricted to electrode materials due their metallic nature. However, can be modified semiconducting used for next-generation channel materials. inherent characteristics pristine M

Language: Английский

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The geometric structure and electronic properties of van der Waals C-Borophane/h-BC6N/Graphene heterostructure: A first-principles study

Physica B Condensed Matter, Journal Year: 2024, Volume and Issue: unknown, P. 416692 - 416692

Published: Nov. 1, 2024

Language: Английский

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Sub-1K Cold-Electron Quantum Well Switching at Room Temperature

Nano Letters, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 28, 2024

Quantum states can provide means to systematically manipulate the transport of electrons. Here we present electron across quasi-bound two heterogeneous quantum wells (QWs), where thermally excited electrons is blocked or enabled depending on relative positions states, with an abrupt current onset occurring when QW align. The switch comprises a source (Cr), QW1 (Cr

Language: Английский

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High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

Materials Science and Engineering B, Journal Year: 2024, Volume and Issue: 311, P. 117804 - 117804

Published: Nov. 7, 2024

Language: Английский

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