Advances in Chromium‐Activated Phosphors for Near‐Infrared Light Sources

Laser & Photonics Review, Journal Year: 2022, Volume and Issue: 16(11)

Published: Aug. 7, 2022

Abstract Cr 3+ /Cr 4+ ‐activated near‐infrared (NIR) luminescent materials have attracted extensive attention owing to their tunable emission wavelength and widespread applications in plant growth, food analysis, biomedical imaging, night vision, so on. Plenty of excellent NIR are developed by introducing ion various inorganic hosts. Herein, the effect crystal field on luminescence combining Tanabe–Sugano energy level diagram configuration coordinate model is discussed. Research progress ‐doped materials, including phosphors designed from structural models with octahedral, tetrahedral, other coordination types, then outlined. The properties more than 200 kinds summarized. In particular, several strategies for tuning wavelength, broadening band, enhancing efficiency, improving thermal stability, listed. Finally, current challenges future prospects research presented. This review will contribute a deeper understanding not only mechanism but also chromium‐doped as develop better performance explore applications.

Language: Английский

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Recent Advances in Chromium‐Doped Near‐Infrared Luminescent Materials: Fundamentals, Optimization Strategies, and Applications

Advanced Optical Materials, Journal Year: 2022, Volume and Issue: 11(3)

Published: Dec. 5, 2022

Abstract Development of chromium‐doped luminescent materials is pertinent to many emerging applications, ranging from agriculture, food industry noninvasive health monitoring. The fundamental importance chromium‐activated in the field optics and biomedicine makes rapid development novel relevant applications. Herein, recent advances on luminescence principle photoluminescence (PL) optimization for Cr 3+ ‐activated together with their potential applications are reviewed. different types most recently developed ‐doped design principles systematically summarized. associations between crystal structure near‐infrared (NIR) PL properties, as well performance‐evaluating parameters introduced examples known NIR emitting phosphors, which will be helpful explore future materials. Based control, site engineering, electron–phonon coupling, several efficient strategies optimizing performances including bandwidth, thermal stability, quantum efficiency proposed. Then, fields analysis, night vision, information encryption, optical sensors surveyed. Finally, challenges promising

Language: Английский

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Achieving High Quantum Efficiency Broadband NIR Mg₄Ta₂O₉:Cr³⁺ Phosphor Through Lithium‐Ion Compensation

Advanced Materials, Journal Year: 2023, Volume and Issue: 35(22)

Published: March 3, 2023

Ultra-efficient broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are urgently needed to improve the detection sensitivity and spatial resolution of current smart NIR spectroscopy-based techniques. Nonetheless, performance pc-LED has severely limited owing external quantum efficiency (EQE) bottleneck materials. Herein, a blue LED excitable Cr3+ -doped tetramagnesium ditantalate (Mg4 Ta2 O9 , MT) phosphor is advantageously modified through lithium ion as key efficient emitter achieve high optical output power light source. The emission spectrum encompasses 700-1300 nm electromagnetic first biological window (λmax = 842 nm) with full-width at half-maximum (FWHM) ≈2280 cm-1 (≈167 nm), achieves record EQE 61.25% detected 450 excitation Li-ion compensation. A prototype fabricated MT:Cr3+ Li+ evaluate its potential practical application, which reveals an 53.22 mW driving 100 mA, photoelectric conversion 25.09% 10 mA. This work provides ultra-efficient luminescent material, shows great promise in applications presents novel option for next-generation high-power compact sources.

Language: Английский

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Rapid Nondestructive Detection Enabled by an Ultra‐Broadband NIR pc‐LED

Laser & Photonics Review, Journal Year: 2022, Volume and Issue: 16(7)

Published: April 7, 2022

Abstract The rapid development of near‐infrared (NIR) spectroscopic techniques has greatly stimulated the discovery novel broadband NIR‐emitting phosphors as advanced light sources. Herein, a double‐perovskite phosphor La 2 MgHfO 6 :Cr 3+ /Yb that displays ultra‐broadband NIR emissions with full‐width at half maximum (FWHM) 333 nm is reported. remarkable luminescence property stems from multiple crystallographic sites, relatively weak crystal field, and efficient Cr 3 ‐to‐Yb energy transfer (ET). site occupation elaborately verified by Rietveld refinement first‐principles calculation. By controlling ET process, internal/external quantum efficiency (IQE/EQE), bandwidth, thermal stability are substantially improved. as‐prepared further integrated into miniaturized light‐emitting diode (LED) package, demonstrating superior performance in nondestructive detection structural failure thin electronic cables. results described here provide pointcut for designing desired optical properties toward applications industrial inspection medical diagnosis.

Language: Английский

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Broadband Short-Wave Infrared-Emitting MgGa₂O₄:Cr³⁺, Ni²⁺ Phosphor with Near-Unity Internal Quantum Efficiency and High Thermal Stability for Light-Emitting Diode Applications

ACS Applied Materials & Interfaces, Journal Year: 2023, Volume and Issue: 15(27), P. 32580 - 32588

Published: June 29, 2023

Blue InGaN chip-pumped short-wave infrared (SWIR) emitters have aroused tremendous attention and shown emerging applications in diverse fields such as healthcare, retail, agriculture. However, discovering blue light-emitting diode (LED)-pumped SWIR phosphors with a central emission wavelength over 1000 nm remains significant challenge. Herein, we demonstrate the efficient broadband luminescence of Ni2+ by simultaneously incorporating Cr3+ ions into MgGa2O4 lattice, sensitizer emitter. Because strong light absorption high energy transfer efficiency to Ni2+, obtained MgGa2O4:Cr3+, show intense peak at 1260 full width half maximum (FWHM) 222 under excitation light. The optimized phosphor presents an ultra-high photoluminescence quantum 96.5% outstanding thermal stability (67.9%@150 °C). A source has been fabricated through combination prepared commercial 450 LED chip, delivering radiant power 14.9 mW 150 mA input current. This work not only demonstrates feasibility developing high-power using converter technology but also new insights importance technology.

Language: Английский

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LaMgGa₁₁O₁₉:Cr³⁺,Ni²⁺ as Blue‐Light Excitable Near‐Infrared Luminescent Materials with Ultra‐Wide Emission and High External Quantum Efficiency

Advanced Optical Materials, Journal Year: 2023, Volume and Issue: 11(6)

Published: Jan. 6, 2023

Abstract Highly efficient luminescence material covering near‐infrared (NIR) I (700–1000 nm) and II (1000–1700 is of great importance for phosphor‐converted NIR light‐emitting diodes (pc‐LEDs) light sources. The lack ultra‐wide emission luminescent materials that can be excited by cheap blue‐LEDs, suspends the applications pc‐LEDs. Ni 2+ ‐activated phosphor usually gives an NIR‐II region emission, however, it presents low quantum efficiency due to poor absorption in blue region. Here, a blue‐LED‐excitable (400–480 LaMgGa 11 O 19 (LMG):Cr 3+ ,Ni NIR‐emitting reported. Significantly, constructing energy transfer from Cr , demonstrates 650 1600 nm, greatly improves external (EQE) 2% 53%. Besides, weakened exchange coupling −Ni pairs leads abnormal blue‐shift with increasing temperature. fabricated pc‐LED high output power 8 mW at 20 mA photoelectric 14%, which favors potential night‐vision technology, medical applications, non‐destructive analysis, spectroscopic analysis. This exploration ‐Ni co‐doped strategy realizing high‐performance provides novel effective design insights into developing more ultra‐broadband pc‐LEDs based on LEDs.

Language: Английский

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Broadband Near-Infrared Luminescence in Garnet Y₃Ga₃MgSiO₁₂: Cr³⁺ Phosphors

Inorganic Chemistry, Journal Year: 2023, Volume and Issue: 62(10), P. 4220 - 4226

Published: March 1, 2023

Broadband near-infrared (NIR) phosphors are the critical component of phosphor converted NIR light-emitting diode (LED) light sources. However, there still a lack with excellent external quantum efficiency (EQE) and thermal stability. Here, we report highly efficient broadband Y3Ga3MgSiO12: Cr3+. The optimized yields an internal (IQE) EQE 79.9 33.7%, respectively. integrated emission intensity remains at 84.4% that room temperature when heated to 423 K. A LED lamp was made by combining as-prepared blue InGaN chip, which shows output power 89.8 mW photoelectric conversion 17.1% driven 525 input power. Our research provides promising high for source.

Language: Английский

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Broadband and Multimode Near‐Infrared Emitter Based on Cr³⁺‐Activated Stannate for Multifunctional Applications

Advanced Optical Materials, Journal Year: 2023, Volume and Issue: 11(7)

Published: Jan. 19, 2023

Abstract Broadband near‐infrared (NIR) phosphors have recently received considerable attention in spectroscopy technology fields, but designing inexpensive, emission peaks centered above 800 nm, and multimodal broadband NIR luminescence material still remains a great challenge. Here, by selecting stannate compound Mg 2 SnO 4 (MSO) as the host, kind of phosphor MSO:Cr 3+ with multimode properties is reported. The designed exhibits an peaking at nm full‐width half maximum 180 (≈2730 cm −1 ). site occupation Cr MSO unraveled density functional theory calculation. constructed light‐emitting device based on displays high output power 187.19 mW@100 mA remarkable photoelectric efficiency 13.67%, its multifunctional applications information encryption, non‐destructive detection, so are also demonstrated. Additionally, through defect reconstruction, presents superior persistent (PersL) PersL duration time longer than 50 h. This work provides feasible strategy to develop intelligent optical integrated low‐cost compounds host toward versatile such detection bioimaging.

Language: Английский

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Unlocking Cr³⁺–Cr³⁺ Coupling in Spinel: Ultrabroadband Near-Infrared Emission beyond 900 nm with High Efficiency and Thermal Stability

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(23), P. 30185 - 30195

Published: May 31, 2024

Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold promising potential as next-generation compact, portable, and intelligent NIR light sources. Nonetheless, the lack of high-performance broadband phosphors with an emission peak beyond 900 nm has severely hindered development widespread application pc-LEDs. This study presents a strategy for precise control energy-state coupling in spinel solid solutions composed MgxZn1–xGa2O4 to tune emissions Cr3+ activators. By combining crystal field engineering heavy doping, Cr3+–Cr3+ ion pair from 4T2 state is unlocked, giving rise unusual spanning 650 1400 maximum 913 full width at half-maximum (fwhm) 213 nm. Under optimal Mg/Zn ratio 4:1, sample achieves record-breaking performance, including high internal external quantum efficiency (IQE = 83.9% EQE 35.7%) excellent thermal stability (I423 K/I298 K 75.8%). Encapsulating as-obtained into prototype pc-LEDs yields overwhelming output power 124.2 mW driving current 840 mA photoelectric conversion (PCE) 10.5% 30 mA, rendering performance imaging applications.

Language: Английский

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Near‐infrared emitting metal halide materials: Luminescence design and applications

InfoMat, Journal Year: 2024, Volume and Issue: 6(5)

Published: March 28, 2024

Abstract Near‐infrared (NIR) luminescent metal halide (LMH) materials have attracted great attention in various optoelectronic applications due to their low‐temperature solution‐processable synthesis, abundant crystallographic/electronic structures, and unique properties. However, some challenges still remain luminescence design, performance improvement, application assignments. This review systematically summarizes the development of NIR LMHs through classifying origins into four major categories: band‐edge emission, self‐trapped exciton (STE) ion defect‐related emission. The mechanisms different types are discussed detail by analyzing typical examples. Reasonable strategies for designing optimizing luminescence/optoelectronic properties summarized, including bandgap engineering, self‐trapping state chemical composition modification, energy transfer, other auxiliary such as improvement synthesis scheme post‐processing. Furthermore, prospects based on devices revealed, phosphor‐converted light‐emitting diodes (LEDs), electroluminescent LEDs, photodetectors, solar cells, x‐ray scintillators, well demonstrations related practical applications. Finally, existing future perspectives LMH critically proposed. aims provide general understanding guidance design high‐performance materials. image

Language: Английский

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