Advanced Optical Materials,
Journal Year:
2022,
Volume and Issue:
11(5)
Published: Dec. 19, 2022
Abstract
Near‐infrared
(NIR)
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs)
are
newly
emerging
broadband
NIR
light
sources.
However,
the
lack
of
high‐performance
NIR‐emitting
materials
limits
their
popularization.
Herein,
an
anionic
F‐substitution
strategy
is
presented
to
regulate
absorption
and
emission
MgGa
2
O
4
:Cr
3+
phosphors.
Accordingly,
enhancement
as
well
redshift
broadening
achieved
for
F‐substituted
(MGOF:Cr
)
phosphors,
simultaneously
with
high
efficiency
excellent
thermal
stability.
Upon
blue
excitation,
MGOF:0.02Cr
phosphor
exhibits
a
(650–1200
nm)
peak
wavelength
(λ
max
835
nm
full
width
at
half
maximum
≈250
nm.
Furthermore,
has
near‐unity
internal
quantum
its
intensity
150
°C
maintains
94%
initial
value.
A
record
external
60.6%
further
MGOF:0.08Cr
redshifted
λ
870
The
Cr
local
structural
alteration
revealed
account
outstanding
luminescence
characteristics
MGOF:Cr
in
view
systematic
characterization
spectroscopic
analysis.
pc‐LED
device
good
optical
performance
fabricated
application
semiconductor
wafer
inspection
demonstrated.
This
study
initiates
new
way
design
InfoMat,
Journal Year:
2024,
Volume and Issue:
6(5)
Published: March 28, 2024
Abstract
Near‐infrared
(NIR)
luminescent
metal
halide
(LMH)
materials
have
attracted
great
attention
in
various
optoelectronic
applications
due
to
their
low‐temperature
solution‐processable
synthesis,
abundant
crystallographic/electronic
structures,
and
unique
properties.
However,
some
challenges
still
remain
luminescence
design,
performance
improvement,
application
assignments.
This
review
systematically
summarizes
the
development
of
NIR
LMHs
through
classifying
origins
into
four
major
categories:
band‐edge
emission,
self‐trapped
exciton
(STE)
ion
defect‐related
emission.
The
mechanisms
different
types
are
discussed
detail
by
analyzing
typical
examples.
Reasonable
strategies
for
designing
optimizing
luminescence/optoelectronic
properties
summarized,
including
bandgap
engineering,
self‐trapping
state
chemical
composition
modification,
energy
transfer,
other
auxiliary
such
as
improvement
synthesis
scheme
post‐processing.
Furthermore,
prospects
based
on
devices
revealed,
phosphor‐converted
light‐emitting
diodes
(LEDs),
electroluminescent
LEDs,
photodetectors,
solar
cells,
x‐ray
scintillators,
well
demonstrations
related
practical
applications.
Finally,
existing
future
perspectives
LMH
critically
proposed.
aims
provide
general
understanding
guidance
design
high‐performance
materials.
image
Abstract
Near‐infrared
(NIR)
light
sources
have
gained
immense
popularity
in
recent
years
due
to
their
wide
range
of
applications
various
fields,
including
spectroscopy
and
biomedical
imaging.
However,
the
limited
emission
bandwidth
NIR
phosphors
is
a
significant
bottleneck
development.
Here,
novel
strategy
reported
broaden
by
awakening
dumb
site.
Na
4
M
3
Ta(PO
)
6
:
Cr
3+
(
=
Al
,
Ga
In
phosphor
synthesized,
which
exhibits
greatly
broadened
from
134
232
nm.
Structural
spectral
analysis
reveals
that
NaO
octahedral
site
has
severe
t
2g
‐type
distortion,
making
it
for
.
By
introducing
larger
at
site,
angular
distortion
decreases
normal
range,
enabling
luminescence
again.
Along
with
bandwidth,
peak
also
redshifts
802
977
nm,
giving
advantages
applications.
Interestingly,
awakened
shows
even
better
properties
than
original
M/TaO
These
findings
reveal
insight
into
could
potentially
revolutionize
design
phosphors.
Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
12(11)
Published: Feb. 8, 2024
Abstract
Cr
3+
doped
garnet‐type
(A
3
B
2
C
O
12
)
near‐infrared
(NIR)
phosphors
is
a
desirable
research
hotspot
due
to
their
prospective
night
vision,
bioimaging,
and
plant
growth
utilizations.
Meanwhile,
the
origin
of
multisite
broad
emission
yet
controversial
topic.
To
resolve
trouble,
verifying
accurately
multiple
occupancy
sites
key.
Furthermore,
it
an
urgent
need
for
improving
external
quantum
efficiency
luminescent
thermostability.
Herein,
in
Y
Sc
Al
(YSAO),
advanced
electron
microscopy
technique
employed
directly
confirm
that
obtained
broadband
NIR
originates
from
[ScO
6
]
octahedral
[YO
8
dodecahedral
sites.
The
optimal
YSAO:5%Cr
sample
exhibits
high
(IQE/EQE
=
74/31%)
near‐zero
thermal
quenching
(97%@423
K
92%@473
K).
theoretical
calculations
experimental
proofs
reveal
YSAO
possesses
structural
rigidity
wide
bandgap,
which
responsible
extremely
thermostable
luminescence.
high‐power
‐converted
LED
device
shows
promising
multifunctional
applications.
This
work
not
only
provides
efficient
phosphor
with
quenching,
but
also
effective
determination
method
emitting
centers
materials.
ACS Applied Materials & Interfaces,
Journal Year:
2022,
Volume and Issue:
14(47), P. 53101 - 53110
Published: Nov. 17, 2022
Infrared-emitting
phosphor-converted
light-emitting
diodes
(LEDs)
are
desirable
light
sources
for
a
very
wide
range
of
applications
such
as
spectroscopy
analysis,
nondestructive
monitoring,
covert
information
identification,
and
night-vision
surveillance.
The
most
important
aspect
infrared
emitters
is
to
cover
the
widest
possible
wavelength
emitted
light.
However,
developing
ultrabroad-band
based
on
converter
technology
still
challenging
task
due
lack
suitable
phosphor
materials
that
emit
in
upon
excitation
from
blue-emitting
chips.
Herein,
this
work
demonstrates
Cr3+-activated
Mg2SiO4
phosphors
with
super
spectral
600
1400
nm
high
internal
quantum
yield
up
80.4%
460
excitation.
Site-selective
occupancy
Cr3+
two
different
Mg
sites
lattice
results
distinct
broad
emission
bands
peaking
at
760
970
nm,
both
which
contribute
luminescence
full
width
half
maximum
(FWHM)
419
nm.
This
by
far
broadest
best
our
knowledge.
On
basis,
an
LED
prototype
has
been
fabricated
combination
Mg2SiO4:Cr3+
blue
chip,
shows
great
potential
imaging
sensing
applications.
site-selective
control
Cr
ions
effective
strategy
Cr3+-doped
phosphors.
Advanced Optical Materials,
Journal Year:
2022,
Volume and Issue:
11(5)
Published: Dec. 19, 2022
Abstract
Near‐infrared
(NIR)
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs)
are
newly
emerging
broadband
NIR
light
sources.
However,
the
lack
of
high‐performance
NIR‐emitting
materials
limits
their
popularization.
Herein,
an
anionic
F‐substitution
strategy
is
presented
to
regulate
absorption
and
emission
MgGa
2
O
4
:Cr
3+
phosphors.
Accordingly,
enhancement
as
well
redshift
broadening
achieved
for
F‐substituted
(MGOF:Cr
)
phosphors,
simultaneously
with
high
efficiency
excellent
thermal
stability.
Upon
blue
excitation,
MGOF:0.02Cr
phosphor
exhibits
a
(650–1200
nm)
peak
wavelength
(λ
max
835
nm
full
width
at
half
maximum
≈250
nm.
Furthermore,
has
near‐unity
internal
quantum
its
intensity
150
°C
maintains
94%
initial
value.
A
record
external
60.6%
further
MGOF:0.08Cr
redshifted
λ
870
The
Cr
local
structural
alteration
revealed
account
outstanding
luminescence
characteristics
MGOF:Cr
in
view
systematic
characterization
spectroscopic
analysis.
pc‐LED
device
good
optical
performance
fabricated
application
semiconductor
wafer
inspection
demonstrated.
This
study
initiates
new
way
design
