Abstract
Achieving
ultra‐broadband
absorption
and
enhancing
the
near‐infrared
(NIR)
emitting
properties
of
NIR
phosphors
is
a
key
challenge
to
realize
its
multiple
applications,
such
as
solar
spectrum
conversion,
spectral
analysis,
night
vision.
Here,
novel
phosphor
system
MTiTaO
6
:
Cr
3+
(
M
=
Al
,
Ga
Sc
),
with
an
excitation
broad
421
nm
enhanced
emission
reported.
It
widest
among
known
‐doped
phosphors.
Structural
spectroscopic
analysis
shows
that
originates
from
overlap
luminescence
centers.
Additionally,
peak
red‐shifted
816
871
increasing
ion
radius,
intensity
enhanced,
which
not
only
makes
spectra
more
compatible
response
curve
c‐Si
cells,
but
also
gives
it
advantage
in
spectroscopy
applications.
Comparison
water
alcohol
demonstrate
promising
Abstract
Near‐infrared
phosphor‐converted
light‐emitting
diodes
(NIR
pc‐LEDs)
are
regarded
one
of
the
most
promising
light
sources
for
food
analysis,
plant
growth,
bioimaging,
night
vision,
and
so
on.
Cr
3+
‐activated
NIR
phosphors
have
garnered
increasing
attention
due
to
their
exceptional
photoluminescence
properties
pc‐LED.
However,
them
suffer
from
poor
thermal
stability
or
low
efficiency
which
limits
large‐scale
application.
Herein,
a
novel
Sr
3
MgGe
5
O
14
:
(SMGO:
)
phosphor
is
presented,
exhibits
broadband
emission
ranging
range
650–1000
nm
with
peak
at
735
nm.
SMGO:
0.005Cr
demonstrates
an
almost
near‐unity
internal
quantum
(99.4%)
excellent
quenching
performance
(
I
423
K
/I
298
=
86%).
First‐principles
theory
calculation
indicates
that
ions
preferentially
occupy
[Ge2/MgO
4
]
[Ge3O
sites
high
doping
concentration
within
SMGO
host,
illustrating
mechanism.
Furthermore,
pc‐LED
manufactured
by
utilizing
445
blue
LED
chip,
output
power
140.5
mW
photoelectric
conversion
15.5%
300
mA.
Potential
applications
growth
detection
several
mental
also
demonstrated,
demostrates
its
application
in
growth.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 26, 2025
Abstract
0D
hybrid
Sb(III)
halides
generally
exhibit
unique
crystal
structure
and
efficient
emission.
However,
achieving
white
light
blue
light‐excited
near‐infrared
(NIR)
emission
remains
an
enormous
challenge.
Herein,
a
series
of
(18‐crown‐6@K)
2
SbX
5
(X
=
Cl,
Br)
crystals
with
different
Cl/Br
rations
are
synthesized
via
supramolecular
self‐assembly.
All
compounds
show
the
broadband
emission,
which
stems
from
self‐trapped
excitons
in
[SbX
]
2−
pseudo‐octahedral
structure.
Particularly,
SbCl
shows
tunable
under
various
excitation
wavelengths,
ultra‐high
luminous
efficiency
92.3%
is
obtained
310
nm
excitation.
As
Br
gradually
replaces
not
only
bands
red‐shift
but
also
facilitate
intersystem
crossing
process
singlet
to
triplet
excitons.
Thus,
independent
NIR
upon
450
58.2%
SbBr
crystals.
Moreover,
high‐performance
single‐component
light‐emitting
diode
(WLED)
based
on
LED
fabricated,
image
fusion
realized.
Finally,
combined
multiangle
imaging
WLED
irradiation,
3D
reconstruction
centrifuge
tube
wrapped
capsule
successfully
demonstrated.
Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
12(32)
Published: Aug. 9, 2024
Abstract
Cr
3+
‐activated
broadband
near‐infrared
(NIR)
phosphors
are
studied
extensively
for
application
in
phosphor
converted
light‐emitting
diode
(pc‐LED),
a
new
light
source
substance
testing
based
on
NIR
spectroscopy.
However,
the
emission
of
is
mainly
located
I
region
(700–1000
nm)
and
many
substances
show
characteristic
spectroscopy
II
(1000–1700
nm).
In
this
paper,
dual‐wavelength
realized
Ni
2+
codoped
Zn
3
Ga
2
GeO
8
(ZGGO)
via
energy
transfer
from
emitting
to
.
The
photoluminescent
properties
doped
ZGGO
as
function
doping
concentration
optimal
concentrations
determined
be
0.04
0.003,
respectively,
with
internal
quantum
efficiency
(IQE)
37.5%.
ZGGO:Cr
,
phosphor‐in‐glass
(PiG),
prepared
fabricating
PiG‐converted
ultrabroadband
LEDs
avoid
serious
reabsorption
pc‐LED
packaged
using
dispersed
epoxy
resin
or
silicone.
PiG
offers
photoelectric
4.3%@20
mA
output
power
17
mW@200
shows
stable
spectral
distribution
against
drive
current
compared
pc‐LED.
