Advanced Science,
Journal Year:
2024,
Volume and Issue:
12(2)
Published: Nov. 19, 2024
Abstract
The
memristor
has
recently
demonstrated
considerable
potential
in
the
field
of
large‐scale
data
information
processing.
Metal
halide
perovskites
(MHPs)
have
emerged
as
leading
contenders
for
memristors
due
to
their
sensitive
optoelectronic
response,
low
power
consumption,
and
ability
be
prepared
at
temperatures.
This
work
presents
a
comprehensive
enumeration
analysis
predominant
research
advancements
mechanisms
resistance
switch
(RS)
behaviors
MHPs‐based
memristors,
along
with
summary
useful
characterization
techniques.
impact
diverse
optimization
techniques
on
functionality
perovskite
is
examined
synthesized.
Additionally,
MHPs
processing,
physical
encryption
devices,
artificial
synapses,
brain‐like
computing
advancement
evaluated.
review
can
prove
valuable
reference
point
future
development
applications.
In
conclusion,
current
challenges
prospects
are
discussed
order
provide
insights
into
avenues
next‐generation
storage
technologies
biomimetic
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(26)
Published: April 9, 2024
Abstract
With
the
increasing
need
for
reliable
storage
systems,
conversion‐type
chemistry
typified
by
bromine
cathodes
attracts
considerable
attention
due
to
sizeable
theoretical
capacity,
cost
efficiency,
and
high
redox
potential.
However,
severe
loss
of
active
species
during
operation
remains
a
problem,
leading
researchers
resort
concentrated
halide‐containing
electrolytes.
Here,
profiting
from
intrinsic
halide
exchange
in
perovskite
lattices,
novel
low‐dimensional
hybrid
cathode,
TmdpPb
2
[IBr]
6
,
which
serves
not
only
as
halogen
reservoir
reversible
three‐electron
conversions
but
also
an
effective
absorbent
surface
Pb
dangling
bonds,
C─H…Br
hydrogen
Pb─I…Br
is
proposed.
As
such,
Zn||TmdpPb
battery
delivers
three
remarkable
discharge
voltage
plateaus
at
1.21
V
(I
0
/I
−
),
1.47
+
1.74
(Br
/Br
)
typical
halide‐free
electrolyte;
meanwhile,
realizing
capacity
over
336
mAh
g
−1
0.4
A
retentions
88%
92%
after
1000
cycles
1.2
4000
3.2
respectively,
accompanied
coulombic
efficiency
≈99%.
The
work
highlights
promising
based
on
metal–halide
materials.
Materials Today Electronics,
Journal Year:
2024,
Volume and Issue:
9, P. 100111 - 100111
Published: Aug. 4, 2024
Halide
perovskites
are
gaining
prominence
as
promising
materials
for
future
electronic
applications,
primarily
due
to
their
unique
properties
including
long
carrier
diffusion
lengths,
tunable
bandgap,
facile
synthesis,
and
cost
efficiency.
However,
polycrystalline
halide
perovskite
thin
films,
which
have
been
widely
studied
date,
significant
drawbacks
uncontrollable
grain
boundaries
instability
issues.
Recently,
low-dimensional
(LD
HPs)
offer
enhanced
stability
adaptable
morphologies,
making
them
attractive
candidates
next-generation
electronics
beyond
optoelectronics.
This
review
comprehensively
explores
recent
advancements
in
LD
HP-based
electronics,
covering
structural
characteristics,
synthesis
methods
tailored
different
dimensions,
diverse
applications.
Furthermore,
the
impressive
performance
demonstrated
by
HPs
applications
resistive
random-access
memory,
advanced
transistors,
neuromorphic
computing
hardware
is
discussed.
Finally,
outlines
challenges
perspectives
required
scale
up
commercial
production,
offering
valuable
insights
researchers
venturing
into
realm
of
new
electronics.
Chemical Reviews,
Journal Year:
2023,
Volume and Issue:
123(16), P. 10206 - 10257
Published: July 31, 2023
Using
compressive
mechanical
forces,
such
as
pressure,
to
induce
crystallographic
phase
transitions
and
mesostructural
changes
while
modulating
material
properties
in
nanoparticles
(NPs)
is
a
unique
way
discover
new
behaviors,
create
novel
nanostructures,
study
emerging
that
are
difficult
achieve
under
conventional
conditions.
In
recent
decades,
NPs
of
plethora
chemical
compositions,
sizes,
shapes,
surface
ligands,
self-assembled
mesostructures
have
been
studied
pressure
by
in-situ
scattering
and/or
spectroscopy
techniques.
As
result,
the
fundamental
knowledge
pressure–structure–property
relationships
has
significantly
improved,
leading
better
understanding
design
guidelines
for
nanomaterial
synthesis.
present
review,
we
discuss
experimental
progress
NP
high-pressure
research
conducted
primarily
over
roughly
past
four
years
on
semiconductor
NPs,
metal
oxide
perovskite
NPs.
We
focus
pressure-induced
behaviors
at
both
atomic-
mesoscales,
inorganic
property
upon
compression,
structural
pressure.
further
depth
molecular
modeling,
including
simulations
ligand
behavior,
phase-change
chalcogenides,
layered
transition
dichalcogenides,
boron
nitride,
hybrid
organic–inorganic
perovskites
These
models
now
provide
mechanistic
explanations
observations
predictive
future
design.
conclude
with
summary
our
insights
directions
exploration
transition,
coupling,
growth,
nanoelectronic
photonic
properties.
Advanced Functional Materials,
Journal Year:
2023,
Volume and Issue:
34(10)
Published: Nov. 5, 2023
Abstract
Brain‐inspired
neuromorphic
computing
has
been
developed
as
a
potential
candidate
for
solving
the
von
Neumann
bottleneck
of
traditional
systems.
2D
materials‐based
memristors
have
exponentially
investigated
promising
building
blocks
because
their
excellent
electrical
performance,
simple
structure,
and
small
device
scale.
However,
while
many
researchers
focused
on
looking
into
individual
artificial
devices
based
memristors,
only
few
studies
integration
neuron
synaptic
reported.
In
this
work,
both
volatile
nonvolatile
are
fabricated
by
using
hexagonal
boron
nitride
film
devices,
respectively.
The
leaky‐integrate‐and‐fire
performance
functions
(e.g.,
weight
plasticity
spike‐timing‐dependent
plasticity)
well
emulated
with
devices.
MNIST
image
classification
is
conducted
experimental
data.
For
first
time,
an
neuron‐synapse‐neuron
neural
network
physically
constructed
to
mimic
biological
networks.
connection
strength
modulation
experimentally
demonstrated
between
neurons
depending
conductance
state
synapse,
paving
way
development
large‐scale
hardware.
Applied Physics Reviews,
Journal Year:
2024,
Volume and Issue:
11(1)
Published: Jan. 19, 2024
The
Von
Neumann
architecture
has
been
the
foundation
of
modern
computing
systems.
Still,
its
limitations
in
processing
large
amounts
data
and
parallel
have
become
more
apparent
as
requirements
increase.
Neuromorphic
computing,
inspired
by
human
brain,
emerged
a
promising
solution
for
developing
next-generation
memory
devices
with
unprecedented
computational
power
significantly
lower
energy
consumption.
In
particular,
development
optoelectronic
artificial
synaptic
made
significant
progress
toward
emulating
functionality
biological
synapses
brain.
Among
them,
potential
to
mimic
function
eye
also
paves
way
advancements
robot
vision
intelligence.
This
review
focuses
on
emerging
field
memristors
based
low-dimensional
nanomaterials.
unique
photoelectric
properties
these
materials
make
them
ideal
use
neuromorphic
storage
devices,
advantages
including
high
carrier
mobility,
size-tunable
optical
properties,
low
resistor–capacitor
circuit
delay.
working
mechanisms,
device
structure
designs,
applications
are
summarized
achieve
truly
sense-storage-computer
integrated
synapses.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
34(38)
Published: April 13, 2024
Abstract
The
rapid
development
of
mixed‐halide
perovskites
has
established
a
versatile
optoelectronic
platform
owing
to
their
extraordinary
physical
properties,
but
there
remain
challenges
toward
achieving
highly
reliable
synthesis
and
performance,
in
addition,
post‐synthesis
approaches
for
tuning
photoluminescence
properties
after
device
fabrication
limited.
In
this
work,
an
effective
approach
is
reported
leveraging
hot
electrons
generated
from
plasmonic
nanostructures
regulate
the
optical
perovskites.
A
metasurface
composed
Au
nanoparticles
can
effectively
tailor
both
location‐specific
phase
segregation
CsPbI
2
Br
thin
films.
ultrafast
transient
absorption
spectroscopy
measurements
reveal
electron
injection
on
timescale
hundreds
femtoseconds.
Photocurrent
confirm
hot‐electron‐enhanced
photon‐carrier
conversion,
gate‐voltage
observed
because
correlated
carrier
halide
migration
perovskite
Finally,
characteristics
gate‐modulated
light
emission
are
found
conform
rectified
linear
unit
function,
serving
as
nonlinear
electrical‐to‐optical
converters
artificial
neural
networks.
Overall,
engineering
demonstrated
work
provides
control
perovskites,
underscoring
potential
metasurfaces
advancing
technologies.
The Journal of Physical Chemistry Letters,
Journal Year:
2024,
Volume and Issue:
unknown, P. 10087 - 10103
Published: Sept. 27, 2024
With
the
advent
of
generation
artificial
intelligence
(AI)
based
on
big
data-processing
technologies,
next-generation
memristor
and
memristive
neuromorphic
devices
have
been
actively
studied
with
great
interest
to
overcome
von
Neumann
bottleneck
limits.
Among
various
candidates,
halide
perovskites
(HPs)
in
spotlight
as
potential
candidates
for
these
due
their
unique
switching
characteristics
low
energy
consumption
flexible
integration
compatibility
across
sources
scalability.
We
outline
operating
principles
HP-based
memristors
devices.
explain
filamentary-
interface-type
according
type
conducting
pathway
occurring
inside
active
HP
layer
mechanisms
depending
species
that
make
up
this
pathway.
summarize
types
current
changes
beneficial
device
applications
finally
organize
suggested
analysis
tools
physical
models
enable
experimental
determination
from
perspectives.
ACS Applied Materials & Interfaces,
Journal Year:
2024,
Volume and Issue:
16(10), P. 12277 - 12288
Published: Feb. 29, 2024
Capitalizing
on
rapid
carrier
migration
characteristics
and
outstanding
photoelectric
conversion
performance,
halide
perovskite
memristors
demonstrate
an
exceptional
resistive
switching
performance.
However,
they
have
consistently
faced
constraints
due
to
material
stability
issues.
This
study
systematically
employs
elemental
modulation
dimension
engineering
effectively
control
with
different
dimensions
A-site
elements.
Compared
pure
3D
2D
perovskites,
the
quasi-2D
memristor,
specifically
BA0.15MA0.85PbI3,
is
identified
as
optimal
choice
through
observations
of
(HRS
current
<
10–5
A,
ON/OFF
ratio
>
103,
endurance
cycles
1000,
retention
time
104
s)
synaptic
plasticity
characteristics.
Subsequently,
a
comprehensive
investigation
into
various
aspects,
including
paired-pulse
facilitation
(PPF),
spike-variability-dependent
(SVDP),
spike-rate-dependent
(SRDP),
spike-timing-dependent
(STDP),
conducted.
Practical
applications,
such
memory–forgetting–memory
recognition
Modified
National
Institute
Standards
Technology
(MNIST)
database
handwritten
data
set
(accuracy
rate
reaching
94.8%),
are
explored
successfully
realized.
article
provides
good
theoretical
guidance
for
synaptic-like
simulation
in
memristors.
