Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Abstract Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive growing demands miniaturization energy efficiency nanoelectronics, further reductions operating voltage ferroelectric‐based dispensable thus have received immense attentions. Recent remarkable advances atomic‐scale synthesis, cutting‐edge characterizations, multiscale theoretical calculations ferroelectrics gained unprecedented insights into manipulation emergent functionalities multiple length scales, which helps discovery nontrivial polar structures designs device architectures toward promise ultralow‐power consumption. Here, state‐of‐the‐art strategies reducing ferroelectric materials reviewed. This article starts with a brief introduction major achievements ferroelectrics, expounds on techniques probe polarization‐switching process. Moreover, this focuses predominantly recent advancements achieving low voltages through various prevalent such as thickness scaling, defect engineering, chemical doping, surface interfacial design, strain engineering. Finally, perspectives scientific technical challenges discussed, aiming facilitate applications technologies.

Language: Английский

---

Electronic and optical properties of molybdenum disulfide (MoS2) mono layer using density functional theory (DFT) calculations

AIP Advances, Journal Year: 2025, Volume and Issue: 15(2)

Published: Feb. 1, 2025

This work presents a detailed computational study of the electronic and optical properties monolayer MoS2, focusing on its potential for optoelectronic quantum applications. employs first-principles calculations based density functional theory time-dependent perturbation (TDDFPT) to investigate material’s band structure, projected states (PDOS), absorption spectrum, dielectric function, joint (JDOS). The direct bandgap at K-point, as revealed by highlights MoS2’s suitability high-efficiency photodetectors light-emitting devices. PDOS spectrum confirm dominant role Mo-d S-p orbitals in shaping conduction valence bands, respectively, with peak 0.94 eV aligning experimental observations. function reveals smooth transition from transparency refractivity higher photon energies, supporting photonic integrated circuit In addition, JDOS shows selective transitions, suggesting promise UV detection high-energy light emitters. These findings establish MoS2 versatile material significant future systems computing

Language: Английский

---

Spintronic Devices upon 2D Magnetic Materials and Heterojunctions

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: March 7, 2025

In spintronics, there has been increasing interest in two-dimensional (2D) magnetic materials. The well-defined layered crystalline structure, interface conditions, and van der Waals stacking of these materials offer advantages for the development high-performance spintronic devices. Spin–orbit torque (SOT) devices tunneling magnetoresistance (TMR) effect based on have emerged as prominent research areas. SOT utilizing 2D can efficiently achieve SOT-driven magnetization switching by modulating interaction between spin orbital degrees freedom. Notably, crystal structure symmetry breaking heterojunctions leads to field-free perpendicular an extremely low current density down 106 A/cm2. This review provides a comprehensive overview construction, measurement, mechanisms heterojunctions. TMR observed also exhibits significant potential various applications. Specifically, spin-filter A-type antiferromagnets led giant ratios approaching 19,000%. Here, we physical underlying effect, along with design such tunnel junctions (MTJ) valves. summarizes different structural types key factors that enhance values. These advanced show promising prospects fields storage. We highlight advancements integration SOT, MTJ, valve devices, which high-density storage capability, low-power computing, fast data transmission rates Magnetic Random Access Memory logic integrated circuits. are expected revolutionize future developments information technology.

Language: Английский

---

Object Motion Detection Enabled by Reconfigurable Neuromorphic Vision Sensor under Ferroelectric Modulation

ACS Nano, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 26, 2024

Increasing the demand for object motion detection (OMD) requires shifts of reducing redundancy, heightened power efficiency, and precise programming capabilities to ensure consistency accuracy. Drawing inspiration from motion-sensitive ganglion cells, we propose an OMD vision sensor with a simple device structure WSe

Language: Английский

---

Pressure-triggered stacking dependence of interlayer coupling in bilayer WS2

Science China Physics Mechanics and Astronomy, Journal Year: 2024, Volume and Issue: 67(8)

Published: June 28, 2024

Language: Английский

---

An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors

Nature Electronics, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 8, 2025

Language: Английский

---

Building Bilayer MoS₂ with Versatile Morphologies via Etching‐And‐Growth Coexisting Method

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 10, 2025

Abstract The etch‐engineering is a feasible avenue to tailor the layer number and morphology of 2D layered materials during chemical vapor deposition (CVD) growth. However, less reports strengthen used in fabrication high‐quality transition metal dichalcogenide (TMD) with tunable layers desirable morphologies improve their prominent performance electronic optoelectronic devices. Here, an etching‐and‐growth coexistence method reported directly synthesize high‐quality, high‐symmetric MoS 2 bilayers versatile via CVD. growth mechanism intensively elucidated through analyzing carrier Ar perturbation associated precursor concentration variations, revealing four stages including growth‐priority, local‐etching, equilibrium etching growth, etching‐priority. as‐grown polygonal bilayer exhibits uniform characteristic, attributed formation single crystal owing limitation multigrain generation. work not only enriches understanding direct TMD materials, but also offers controllable protocol engineer shapes, which can benefit applications

Language: Английский

---

Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe2 membranes

Microsystems & Nanoengineering, Journal Year: 2025, Volume and Issue: 11(1)

Published: Jan. 22, 2025

Abstract Nanoelectromechanical systems (NEMS) based on atomically-thin tungsten diselenide (WSe 2 ), benefiting from the excellent material properties and mechanical degree of freedom, offer an ideal platform for studying exploiting dynamic strain engineering cross-scale vibration coupling in two-dimensional (2D) crystals. However, such opportunity has remained largely unexplored WSe NEMS, impeding exploration exquisite physical processes realization novel device functions. Here, we demonstrate between atomic lattice nanomechanical resonances few-layer NEMS. Using a custom-built setup capable simultaneously detecting Raman motional signals, accomplish mode THz crystal phonon MHz structural vibration, achieving GHz frequency tuning modes with gauge factor 61.9, best among all 2D crystals reported to date. Our findings show that NEMS great promises exploring physics semiconductors.

Language: Английский

---

Development of Self‐Aligned Top‐Gate Transistor Arrays on Wafer‐Scale Two‐Dimensional Semiconductor

Advanced Science, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 20, 2025

Abstract Two‐dimensional semiconductor materials (2DSM) effectively mitigate the short‐channel effect due to their atomic thickness, offering significant advantages over traditional silicon‐based materials, particularly in short channel length. In manufacturing 2DSM top‐gate field‐effect transistors (TG‐FETs), simultaneous miniaturization of gate and can only be achieved through a self‐alignment process, enabling high‐density integration FETs. However, current self‐aligned FETs based on face challenges attaining wafer‐scale process limitations. This work has successfully developed high‐performance TG‐FET arrays using method that integrates processes dry etching, wet selective post‐device optimization. The is demonstrated by fabricating TG‐FETs with length 200 nm, achieving an impressive on‐state density 465.5 µA µm −1 high on‐off ratio 10 8 . Furthermore, we constructed inverters logic modules FETs, showcasing process's compatibility for future integration.

Language: Английский

---

Fast Photothermoelectric Response in CVD-Grown Two-Dimensional Bi₂O₂Se Nanoplates

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 4, 2025

As an emerging two-dimensional (2D) semiconductor material, layered Bi2O2Se exhibits tremendous potential applications in the field of optical devices due to its high electron mobility, exceptional response, and remarkable air stability. In this study, high-quality nanoplates were grown on a fluorophlogopite mica (f-mica) substrate via chemical vapor deposition approach. A two-terminal device is fabricated by traditional beam lithography, which displays linear current–voltage characteristics. The ON/OFF ratio 104 as well n-type maximum responsivity 0.029 W–1 fast photoresponse time 35–42 μs under 638 nm laser illumination are discovered. Spatially resolved scanning photocurrent microscopy conducted, indicates that photothermoelectric effect should be dominant contribution for observed device. This study paves way developing high-performance photoelectron based materials.

Language: Английский

---